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公开(公告)号：KR101661411B1
公开(公告)日：2016-09-30
申请号：KR1020150004433
申请日：2015-01-12
Applicant: 서울대학교산학협력단
Abstract: 자연구에자구벽이동효율을결정하는핵심물리적인요소인드잘로신스키-모리야상호작용(Dzyaloshinskii-Moriya interaction, DMI) 상수측정기술에관한것이다. 기존의측정방법은수평방향자기장크기에따른자구벽이동속력그래프의대칭축으로서얻는방법의수평방향자기장최대값크기에따라측정범위의한계를가지고있다. 그러나본 발명의측정기술은수평방향자기장변화에따른자구벽이동속력그래프의대칭축이자구벽각도에따른변화하는현상을이용하여, 수평방향자기장최대값크기보다큰DMI 상수값 측정가능하다. 이를통해기존방법의한계를극복하여 DMI 상수값을보편적으로측정이가능하다.
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公开(公告)号：KR1020110039792A
公开(公告)日：2011-04-20
申请号：KR1020090096795
申请日：2009-10-12
Applicant: 서울대학교산학협력단
IPC: H01L21/8239
Abstract: PURPOSE: A fixing method using a stray field and notch for the magnetic domain wall pinning in a magnetic domain wall memory are provided to fix a magnetic domain wall to a memory device by using a stray filed which is generated from a groove structure and a nano structure. CONSTITUTION: In a fixing method using a stray field and notch for the magnetic domain wall pinning in a magnetic domain wall memory, a stray field is generated by arranging a ferromagnetism nano structure in the groove structure of a magnetism nano wire. A vertical magnetic component vertical to the magnetic domain wall is generated through the stray field and is maintained a stable energy state. A groove structure has a recessive part in the specific region of the magnetism nano wire. The magnetic domain wall is fixed to a memory device by using the stray field.
Abstract translation: 目的：提供一种使用杂散磁场和磁畴壁陷波在磁畴壁存储器中钉扎的固定方法，通过使用从凹槽结构和纳米结构产生的杂散磁场将磁畴壁固定到存储器件 结构体。 构成：在磁畴壁存储器中使用杂散场和陷波用于磁畴壁钉扎的固定方法中，通过在磁性纳米线的沟槽结构中布置铁磁性纳米结构来产生杂散场。 通过杂散场产生垂直于磁畴壁的垂直磁性分量并保持稳定的能量状态。 凹槽结构在磁性纳米线的特定区域中具有隐性部分。 通过使用杂散场将磁畴壁固定到存储器件。
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公开(公告)号：KR1020100125144A
公开(公告)日：2010-11-30
申请号：KR1020090044199
申请日：2009-05-20
Applicant: 서울대학교산학협력단
CPC classification number: G01R33/096 , G01R27/00 , G01R33/07
Abstract: PURPOSE: A device for measuring a magnetic anisotropy constant is provided to stably measure the magnetic anisotropy constant of a magnetic element by measuring an electric signal like the electric resistance or hall voltage of the magnetic element. CONSTITUTION: A magnetic field generator(100) applies a uniform magnetic field and forms a magnetic space. A rotating unit(200) rotates a magnetic element around a fixed axis. A data measuring unit(300) measures the resistance of a magnetic element. An operator(400) operates the magnetic anisotropy constant of the magnetic element.
Abstract translation: 目的：提供用于测量磁各向异性常数的装置，通过测量诸如磁性元件的电阻或霍尔电压的电信号来稳定地测量磁性元件的磁各向异性常数。 构成：磁场发生器（100）施加均匀的磁场并形成磁空间。 旋转单元（200）围绕固定轴线旋转磁性元件。 数据测量单元（300）测量磁性元件的电阻。 操作者（400）操作磁性元件的磁各向异性常数。
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公开(公告)号：KR102254252B1
公开(公告)日：2021-05-20
申请号：KR1020190149178
申请日：2019-11-20
Applicant: 서울대학교산학협력단
Abstract: 본발명의일 실시예에따른자구벽이동소자는, 복수의자구벽을가지고수직자기이방성을가지고제1 두께와일정한폭을가지고연장되는강자성층; 제2 두께를가지고상기강자성층과정렬되고상기강자성층과나란히연장되고상기강자성층의하부면에접촉하여배치되는하부비자성중금속층; 및상기강자성층과정렬되고상기강자성층과나란히연장되고상기강자성층의상부면에접촉하여배치되는상부비자성중금속층;을포함한다.
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Patent Agency Ranking
公开(公告)号：KR1020160086463A
公开(公告)日：2016-07-20
申请号：KR1020150003330
申请日：2015-01-09
Applicant: 서울대학교산학협력단
Abstract: 본발명은자구벽메모리소자의핵심인수직자기이방성을가지는물질들을연구하기위해적합한측정방법을제공하는기술에관한것이다. 좀더 자세히는, 광자기컬 현미경과 2축전자석을이용하여주어진자기장에따라변화하는자기이력곡선을측정및 분석하여대상물질의중요한특성중 하나인수직자기이방자기장값을얻어내는새로운광학적방법에관련된것이다. 본발명으로기존측정방식들로는불가능했던국지적인수직자기이방자기장의측정을가능하게하고, 나노자성박막연구에있어서광학적측정방식의접근성과유연성을늘릴수 있도록측정방식의선택의가지를더해줄수 있다.
Abstract translation: 本发明涉及提供用于测量具有垂直各向异性特性的物体的适当方法的技术，其对于磁畴壁存储器件至关重要。 更具体地说，本发明涉及一种通过测量和分析磁滞曲线来获取目标物体的重要性质的新的光学方法，该磁滞曲线基于所提供的磁场而改变，该磁滞曲线通过使用 磁光克尔效应显微镜和双轴电磁铁。 根据本发明，该方法可以测量不能通过当前测量方法测量的局部垂直磁场。 此外，在纳米薄膜研究方面，还可以在测量方法中增加替代选择，以增强光学测量方法的可访问性和灵活性。
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公开(公告)号：KR101635827B1
公开(公告)日：2016-07-04
申请号：KR1020090046080
申请日：2009-05-26
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L21/8247 , H01L27/115 , G11C11/15 , B82Y40/00
CPC classification number: G11C11/161 , G11C11/1675
Abstract: 자구벽이동을이용한정보저장장치에관해개시되어있다. 개시된정보저장장치는자성트랙과상기자성트랙의자구벽을핀닝(pinning)시키기위한적어도하나의핀닝부재(pinning element)를포함할수 있다. 상기핀닝부재는상기자성트랙에상기자구벽을핀닝시키기위한자기장을인가하는요소일수 있고, 상기자기장의방향은상기자구벽의자화방향과동일할수 있다.
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公开(公告)号：KR1020100039794A
公开(公告)日：2010-04-16
申请号：KR1020090046080
申请日：2009-05-26
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L21/8247 , H01L27/115 , G11C11/15 , B82Y40/00
CPC classification number: G11C11/161 , G11C11/1675 , G11C11/15 , B82Y10/00 , G11B5/02 , H01L43/12
Abstract: PURPOSE: An information storage device using the movement of a magnetic domain wall is provided to obtain the information storage device with a large storage capacity without a rotating mechanical device using the movement principles of a magnetic domain and a magnetic domain wall. CONSTITUTION: A magnetic track(100) includes a plurality of magnetic domains(D1, D2) and a magnetic domain wall(DW1). A pinning material(200) is spaced apart from the magnetic track and pins the magnetic domain wall. The pining material applies magnetic field to the magnetic track in order to pin the magnetic domain wall. The direction of the magnetic field is identical to the magnetization direction of the magnetic domain wall. The pinning material is magnetic layer pattern.
Abstract translation: 目的：提供使用磁畴壁移动的信息存储装置，以便利用磁畴和磁畴壁的运动原理，不用旋转的机械装置来获得具有大存储容量的信息存储装置。 构成：磁道（100）包括多个磁畴（D1，D2）和磁畴壁（DW1）。 钉扎材料（200）与磁迹间隔开并且对磁畴壁进行引脚。 打浆材料将磁场施加到磁道以便将磁畴壁固定。 磁场的方向与磁畴壁的磁化方向相同。 钉扎材料是磁性层图案。
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公开(公告)号：KR1020160087054A
公开(公告)日：2016-07-21
申请号：KR1020150004433
申请日：2015-01-12
Applicant: 서울대학교산학협력단
Abstract: 자연구에자구벽이동효율을결정하는핵심물리적인요소인드잘로신스키-모리야상호작용(Dzyaloshinskii-Moriya interaction, DMI) 상수측정기술에관한것이다. 기존의측정방법은수평방향자기장크기에따른자구벽이동속력그래프의대칭축으로서얻는방법의수평방향자기장최대값크기에따라측정범위의한계를가지고있다. 그러나본 발명의측정기술은수평방향자기장변화에따른자구벽이동속력그래프의대칭축이자구벽각도에따른변화하는현상을이용하여, 수평방향자기장최대값크기보다큰DMI 상수값 측정가능하다. 이를통해기존방법의한계를극복하여 DMI 상수값을보편적으로측정이가능하다.
Abstract translation: 本发明涉及一种测量Dzyaloshinskii-Moriya相互作用（DMI）常数的技术，它是确定磁畴壁运动效率的核心物理因素。 现有的测量方法在通过水平磁场的强度获得磁畴壁移动速度图的对称轴时，根据水平磁场的最大值在测量范围内具有限制。 然而，本发明的测量技术可以通过使用磁畴壁移动速度图的对称轴通过水平磁场的变化的现象来测量大于水平磁场的最大值的DMI常数。 通过这样做，本发明可以普遍地测量DMI常数，克服现有方法的限制。
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公开(公告)号：KR1020110092693A
公开(公告)日：2011-08-18
申请号：KR1020100012262
申请日：2010-02-10
Applicant: 서울대학교산학협력단
Abstract: PURPOSE: A structure of electrode for minimizing oersted magnetic field is provided to perform accurate control of a device by controlling the oersted magnetic field which is generated in an electrode connection structure. CONSTITUTION: In a structure of electrode for minimizing oersted magnetic field, a device comprises a magnetic element(320) and an electrode(310). The electrode is faced with the magnetic element while being contacted with it. The oersted magnetic field is generated by a current flowing through an electrode. The size of the oersted magnetic field is larger than the magnetization change critical field of magnetic materials.
Abstract translation: 目的：提供用于使奥斯特磁场最小化的电极结构，通过控制在电极连接结构中产生的奥斯特磁场来对器件进行精确的控制。 构成：在用于最小化奥斯特磁场的电极的结构中，装置包括磁性元件（320）和电极（310）。 电极在与其接触的同时面对磁性元件。 奥斯特磁场由流过电极的电流产生。 奥斯特磁场的大小大于磁性材料的磁化变化临界场。
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