公开(公告)号：KR1020100128360A

公开(公告)日：2010-12-08

申请号：KR1020090046713

申请日：2009-05-28

Applicant: 서울대학교산학협력단

Inventor： 장동수 ,  이희용 ,  이정중

IPC: C01G23/07 ,  C01B13/28

Abstract: PURPOSE: A method for manufacturing titanium dioxide is provided to deposit a titanium dioxide film with a desired surface roughness and crystal phase. CONSTITUTION: A method for depositing titanium dioxide on a substrate controls: the flow rate of hydrogen provided to a chamber or crystals of titanium dioxide by controlling the flow rate of hydrogen provided to a chamber; the surface roughness of titanium dioxide by controlling the flow rate of hydrogen provided to a chamber; and the deposition rate of titanium dioxide by controlling the flow rate of hydrogen provided to a chamber.

Abstract translation: 目的：提供一种制备二氧化钛的方法，以沉积具有所需表面粗糙度和结晶相的二氧化钛膜。 构成：将二氧化钛沉积在衬底上的方法控制：通过控制提供给腔室的氢气的流量，提供给腔室或二氧化钛晶体的氢气流量; 通过控制提供给腔室的氢气流量来控制二氧化钛的表面粗糙度; 以及通过控制提供给腔室的氢气的流量来确定二氧化钛的沉积速率。