公开(公告)号：KR1020100051993A

公开(公告)日：2010-05-19

申请号：KR1020080110831

申请日：2008-11-10

Applicant: 서울대학교산학협력단

Inventor： 황철성 ,  최규진

IPC: H01L21/8242 ,  H01L27/108

Abstract: PURPOSE: The capacitor of a semiconductor device and a method for manufacturing the same are provided to form a dielectric film with a high dielectric constant at a lower temperature by forming a ruthenium layer and a titanium oxide dielectric film after a titanium nitride electrode is treated with plasma. CONSTITUTION: A titanium nitride lower electrode(120) is formed on a semiconductor substrate. The surface of the titanium nitride lower electrode is treated with plasma. A ruthenium layer(130) is formed on the titanium nitride lower electrode. A titanium oxide dielectric film(140) is formed on the ruthenium layer. An upper electrode(150) is formed on the titanium oxide dielectric film.

Abstract translation: 目的：提供半导体器件的电容器及其制造方法，通过在氮化钛电极被处理之后形成钌层和氧化钛电介质膜，在较低温度下形成具有高介电常数的电介质膜 等离子体。 构成：在半导体衬底上形成氮化钛下电极（120）。 用等离子体处理氮化钛下电极的表面。 在氮化钛下电极上形成钌层（130）。 在钌层上形成氧化钛电介质膜（140）。 在氧化钛电介质膜上形成上电极（150）。