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公开(公告)号：KR101914685B1
公开(公告)日：2018-12-28
申请号：KR1020170081576
申请日：2017-06-28
Applicant: 서울대학교산학협력단
Abstract: 본 발명은 사용자 특히 어린이의 유괴 등을 포함한 실종을 방지하기 위하여 실종방지 웨어러블 디바이스(100)에서 수행되는 것으로,
(1) 사용자 또는 보호자가 생체인증을 통하여 상기 실종방지 웨어러블 디바이스(100)를 활성화시키고 부착하는 생체인증단계;
(2) 상기 실종방지 웨어러블 디바이스(100)를 탈착하려 하면 상기 보호자의 이동식단말기를 포함한 수신기에 관련 정보를 송신하는 탈착정보송신단계;
(3) 사용자의 생체인증을 통한 적법한 탈착이 아니면 비상모드로 전환되고 지속적으로 동영상을 촬영하여 실시간으로 상기 보호자의 수신기에 전송하는 비상모드단계;
(4) 상기 보호자의 선택에 따라 상기 비상모드를 유지하거나 안전모드로 전환하는 보호자모드선택단계;
를 포함하여 구성되는 것을 특징으로 하는 생체인증 형 실종방지 웨어러블 디바이스를 이용한 실종방지 방법을 제공한다.-
公开(公告)号：KR1020140075834A
公开(公告)日：2014-06-20
申请号：KR1020120134974
申请日：2012-11-27
Applicant: 롯데케미칼 주식회사 , 서울대학교산학협력단
CPC classification number: Y02P20/544
Abstract: Disclosed is a method for producing aromatic carboxylic acid through partial oxidation of an alkyl aromatic compound. By means of a particular additive, the solubility of an existing catalyst for supercritical carbon dioxide is improved, so that the yield of aromatic carboxylic acid can be improved without additional costs. The method of the present invention comprises the steps of: (a) introducing an alkyl aromatic compound and a reaction catalyst to a reactor; (b) introducing a gaseous solvent and an oxidizing agent to the reactor; (c) introducing a reaction promoter to the reactor for increasing the partial oxidation of the alkyl aromatic compound; (d) increasing the temperature and pressure inside the reactor so as to form a supercritical fluid form from the gaseous solvent by which the alkyl aromatic compound, reaction catalyst, oxidizing agent, and reaction promoter are dissolved and the inside of the reactor is formed in a single phase form so that partial oxidation is performed; and (e) removing the gaseous solvent by depressurizing the inside of the reactor.
Abstract translation: 公开了通过烷基芳族化合物的部分氧化制备芳族羧酸的方法。 通过特定的添加剂，现有催化剂对于超临界二氧化碳的溶解度得到改善，从而可以提高芳族羧酸的收率而不需要额外的成本。 本发明的方法包括以下步骤：（a）将烷基芳族化合物和反应催化剂引入反应器; （b）将气态溶剂和氧化剂引入反应器; （c）将反应促进剂引入反应器以增加烷基芳族化合物的部分氧化; （d）提高反应器内部的温度和压力，从溶解烷基芳族化合物，反应催化剂，氧化剂和反应促进剂的气态溶剂形成超临界流体，形成反应器内部 单相形式，从而进行部分氧化; 和（e）通过减压反应器的内部除去气态溶剂。
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公开(公告)号：KR1020120084940A
公开(公告)日：2012-07-31
申请号：KR1020110006270
申请日：2011-01-21
Applicant: 서울대학교산학협력단
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/66477 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/41733 , H01L29/66742
Abstract: PURPOSE: A thin film transistor and a manufacturing method thereof are provided to improve an electrical performance by reducing constant resistance between a semiconductor layer and an electrode layer by including a seed layer and a main layer made of a transparent conductive material. CONSTITUTION: A gate electrode(120) is formed on the top of a substrate(110). A gate insulating layer(130) is formed in order to cover the gate electrode on the top of the substrate. A semiconductor layer(140) is formed on a region corresponding to the gate electrode on the top of the gate insulating layer. An electrode layer(150) is formed in order to expose a partial upper portion of the semiconductor layer on the top of the gate insulating layer. A passivation layer(160) is formed in order to cover the semiconductor layer and the electrode layer on the top of the gate insulating layer.
Abstract translation: 目的：提供薄膜晶体管及其制造方法，通过包括种子层和由透明导电材料制成的主层，通过减小半导体层和电极层之间的恒定电阻来提高电性能。 构成：在基板（110）的顶部上形成栅电极（120）。 为了覆盖基板顶部的栅电极，形成栅极绝缘层（130）。 半导体层（140）形成在与栅极绝缘层的顶部上的栅极对应的区域上。 形成电极层（150）以暴露栅绝缘层顶部的半导体层的部分上部。 形成钝化层（160）以覆盖栅极绝缘层顶部的半导体层和电极层。
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公开(公告)号：KR101128100B1
公开(公告)日：2012-03-29
申请号：KR1020090012569
申请日：2009-02-16
Applicant: 서울대학교산학협력단
IPC: H01L29/786
Abstract: 본 발명은 반도체층을 구성하는 LDD 영역과 소스 드레인 영역의 계면 특성을 향상시키고, 제조 시간 및 단가를 낮출 수 있는 박막 트랜지스터 및 그 제조 방법에 관한 것이다.
이를 위해 기판의 상부에 형성된 소스 드레인 영역, 상기 소스 드레인 영역의 내측에 상기 소스 드레인 영역보다 낮은 농도로 도핑되어 형성된 LDD 영역 및 상기 LDD 영역의 내측에 형성된 채널 영역을 포함하는 반도체층과, 상기 반도체층의 상부에 형성되는 제 1 절연층과, 상기 제 1 절연층의 가장자리 상부에 형성되는 제 2 절연층과, 상기 제 1 절연층 및 제 2 절연층의 상부에 형성되는 게이트 전극을 포함하여 이루어지는 박막 트랜지스터가 개시된다.
박막 트랜지스터, LDD, 이온 도핑, 자기 정렬, self align-
公开(公告)号：KR101467635B1
公开(公告)日：2014-12-01
申请号：KR1020120134974
申请日：2012-11-27
Applicant: 롯데케미칼 주식회사 , 서울대학교산학협력단
CPC classification number: Y02P20/544
Abstract: 알킬방향족화합물의부분산화반응을통한방향족카르복시산제조방법에있어서, 특정첨가제를이용하여초임계이산화탄소에대한기존촉매의용해도를향상시켜특별한비용의추가부담없이방향족카르복시산의수율을향상시키는방법이개시된다. 본발명은알킬방향족화합물의부분산화반응을통한방향족카르복시산제조방법에있어서, (a) 반응기에알킬방향족화합물및 반응촉매를도입하는단계; (b) 상기반응기에기체상의용매및 산화제를도입하는단계; (c) 상기반응기에상기알킬방향족화합물의부분산화반응을증가시키기위한반응촉진제를도입하는단계; (d) 상기반응기내부의온도및 압력을증가시켜상기기체상의용매를초임계유체상으로형성되도록하여, 상기초임계유체상에상기알킬방향족화합물, 상기반응촉매, 상기산화제및 상기반응촉진제가모두용해되어, 상기반응기내부가단일상의상태로되어부분산화반응이진행되도록하는단계; 및 (e) 상기반응기내부를감압하여상기기체상의용매를제거하는단계;를포함하는것을특징으로하는방향족카르복시산제조방법을제공한다.
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Patent Agency Ranking
公开(公告)号：KR1020120010537A
公开(公告)日：2012-02-03
申请号：KR1020100072133
申请日：2010-07-26
Applicant: 서울대학교산학협력단
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/66742 , H01L29/78693
Abstract: PURPOSE: A thin film transistor and method for a fabricating thin film transistor are provided to improve the reliability of a thin film transistor by depositing a second passivation layer in a first passivation layer under high temperature. CONSTITUTION: An insulating substrate is provided(S110). A gate electrode is formed on the top side of a substrate(S120). The gate insulating layer is formed on the top side of the substrate and gate electrode(S130). A semiconductor layer is formed in the top side of the gate insulating layer(S140). A source / drain electrode is formed in the top of the semiconductor layer(S150). A first passivation layer covers the gate insulating layer, the semiconductor layer, and an exposed source/drain electrode(S160). A second passivation layer is formed on the top of the first passivation layer(S170).
Abstract translation: 目的：提供用于制造薄膜晶体管的薄膜晶体管和方法，以通过在高温下在第一钝化层中沉积第二钝化层来提高薄膜晶体管的可靠性。 构成：提供绝缘基板（S110）。 在基板的上侧形成栅电极（S120）。 栅极绝缘层形成在衬底和栅电极的顶侧上（S130）。 半导体层形成在栅极绝缘层的顶侧（S140）。 在半导体层的顶部形成源极/漏极（S150）。 第一钝化层覆盖栅极绝缘层，半导体层和暴露的源极/漏极（S160）。 在第一钝化层的顶部上形成第二钝化层（S170）。
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公开(公告)号：KR1020100093405A
公开(公告)日：2010-08-25
申请号：KR1020090012569
申请日：2009-02-16
Applicant: 서울대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L29/78618 , H01L29/66757 , H01L29/78675
Abstract: PURPOSE: A thin film transistor and its manufacturing method are provided to improve interfacial properties by reducing air exposure with forming an insulating layer on the top of a semiconductor layer. CONSTITUTION: A semiconductor layer(120) comprises a channel region(121) formed in the inner side of an LDD region(123) and the LDD region. A first insulation layer(130) is formed on the top of the semiconductor layer. A second insulation layer(140) is formed in upper part the edge of the first insulation layer. A gate electrode(160) is formed on the top of the first insulation layer and the second insulation layer. The second insulation layer is formed to cope with the LCD region of the above semiconductor layer.
Abstract translation: 目的：提供薄膜晶体管及其制造方法，以通过在半导体层的顶部上形成绝缘层来减少空气暴露来改善界面性质。 构成：半导体层（120）包括形成在LDD区（123）的内侧的沟道区（121）和LDD区。 第一绝缘层（130）形成在半导体层的顶部上。 第二绝缘层（140）形成在第一绝缘层的边缘的上部。 栅电极（160）形成在第一绝缘层和第二绝缘层的顶部上。 形成第二绝缘层以处理上述半导体层的LCD区域。
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公开(公告)号：KR1020130087915A
公开(公告)日：2013-08-07
申请号：KR1020120009173
申请日：2012-01-30
Applicant: 서울대학교산학협력단
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/42384 , H01L29/66742 , H01L29/7869
Abstract: PURPOSE: A thin film transistor and a manufacturing method thereof are provided to improve the reverse bias property of the thin film transistor by laminating a gate insulating layer of magnesium oxide on the upper part of a silicon oxide layer. CONSTITUTION: A gate (120) is formed on a substrate (110). A first gate insulating layer (130) is formed on the gate and the substrate in order to cover the gate. A second gate insulating layer (140) of magnesium oxide is formed on the first gate insulating layer. A semiconductor layer (150) is formed on the second gate insulating layer in order to correspond to the gate. A source and a drain electrode (160) are formed on the second gate insulating layer.
Abstract translation: 目的：提供薄膜晶体管及其制造方法，以通过在氧化硅层的上部层叠氧化镁的栅极绝缘层来提高薄膜晶体管的反向偏置特性。 构成：在衬底（110）上形成栅极（120）。 为了覆盖栅极，在栅极和基板上形成第一栅极绝缘层（130）。 在第一栅极绝缘层上形成氧化镁的第二栅极绝缘层（140）。 在第二栅极绝缘层上形成半导体层（150），以对应于栅极。 源极和漏极（160）形成在第二栅极绝缘层上。
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公开(公告)号：KR1020130047250A
公开(公告)日：2013-05-08
申请号：KR1020110112166
申请日：2011-10-31
Applicant: 서울대학교산학협력단
IPC: H01L29/786 , G09F9/00
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/1248 , H01L29/78606
Abstract: PURPOSE: A thin film transistor and a flexible display using the same are provided to reduce a threshold voltage shift by forming a passivation layer with fluoropolymers. CONSTITUTION: A passivation layer is formed on the upper side of an active layer and includes fluoropolymers. The passivation layer is formed by using CYTOP among the fluoropolymers. The passivation layer is formed by a spin coating method when the fluoropolymers are dissolved. The passivation layer is annealed at 180 degrees centigrade after the spin coating method is performed.
Abstract translation: 目的：提供薄膜晶体管和使用其的柔性显示器，以通过用含氟聚合物形成钝化层来减小阈值电压偏移。 构成：钝化层形成在活性层的上侧，并且包括含氟聚合物。 通过在含氟聚合物中使用CYTOP形成钝化层。 当氟聚合物溶解时，通过旋涂法形成钝化层。 在进行旋涂法之后，钝化层在180摄氏度下退火。
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公开(公告)号：KR101035662B1
公开(公告)日：2011-05-23
申请号：KR1020100017782
申请日：2010-02-26
Applicant: 서울대학교산학협력단
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/78696
Abstract: PURPOSE: A thin film transistor is provided to efficiently discharge heat from a channel region by separating at least two spaces between a plurality of channel regions. CONSTITUTION: A buffer layer(120) is formed on the upper side of a substrate(110). A semiconductor layer(130) is formed on the upper side of the buffer layer. The semiconductor layer includes a source/drain region(131) and a channel region(132). A gate insulation layer(140) surrounds the semiconductor layer and is formed on the upper side of the buffer layer. A gate electrode(150) is formed on the upper side of the gate insulation layer.
Abstract translation: 目的：提供一种薄膜晶体管，用于通过分离多个沟道区域之间的至少两个空间来有效地从沟道区域排出热量。 构成：在衬底（110）的上侧形成缓冲层（120）。 半导体层（130）形成在缓冲层的上侧。 半导体层包括源/漏区（131）和沟道区（132）。 栅极绝缘层（140）围绕半导体层并形成在缓冲层的上侧。 栅电极（150）形成在栅极绝缘层的上侧。
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