公开(公告)号：KR101337297B1

公开(公告)日：2013-12-05

申请号：KR1020120102418

申请日：2012-09-14

Applicant: 서울대학교산학협력단

Inventor： 김형준 ,  김태훈 ,  이웅재 ,  홍광택 ,  김기훈

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02623

Abstract: The present invention relates to a system for manufacturing an oxide semiconductor and a method thereof. The present invention is provided to induce charges by injecting an impurity to BaSnO3 and replace Ba by La to minimize the scattering of the impurity, thereby obtaining high charge mobility. The present invention provides a method for synthesizing mono-crystal (Ba, La) SnO3 by using BaCO3, SnO2, and La2O3 as a starting material and a method for synthesizing mono-crystal (Ba, La) SnO3 by using poly-crystal BaSnO3 as the starting material. [Reference numerals] (AA) Temperature condition of a high temperature reactor

Abstract translation: 本发明涉及一种用于制造氧化物半导体的系统及其方法。 提供本发明以通过向BaSnO 3注入杂质并用La代替Ba以使杂质的散射最小化以获得高电荷迁移率来诱发电荷。 本发明提供一种通过使用BaCO 3，SnO 2和La 2 O 3作为原料合成单晶（Ba，La）SnO 3的方法和通过使用多晶BaSnO 3作为单晶（Ba，La）SnO 3合成单晶 起始材料。 （附图标记）（AA）高温反应器的温度条件