公开(公告)号：KR100850266B1

公开(公告)日：2008-08-04

申请号：KR1020070047116

申请日：2007-05-15

Applicant: 성균관대학교산학협력단

Inventor： 박종윤 ,  류동헌 ,  최원철

IPC: H01J1/304 ,  H01J9/02 ,  C01B31/02 ,  B82Y40/00

CPC classification number: H01J1/304 ,  B01J19/126 ,  B82Y40/00 ,  H01J9/025 ,  H01J2201/30469

Abstract: A carbon nanotube field emission source comprising a noble metal layer and a manufacturing method thereof are provided to enhance thermal conductivity and electrical conductivity by using a noble metal layer as a buffer layer. An Nb layer is formed on an upper surface of a substrate. A noble metal layer is formed on the upper surface of the substrate including the Nb layer. A carbon nanotube is formed on the upper surface of the substrate including the noble metal layer. A heat treatment process for the substrate including the carbon nanotube is performed by using a microwave or an inductive coil. The heat treatment temperature is equal to and less than 400 degrees centigrade. The noble metal layer is composed of one or more elements selected from a group including Au, Ag, Cu, and an alloy comprising one of Au, Ag, and Cu.

Abstract translation: 提供了包含贵金属层的碳纳米管场发射源及其制造方法，以通过使用贵金属层作为缓冲层来提高导热性和导电性。 在基板的上表面上形成有Nb层。 在包括Nb层的基板的上表面上形成贵金属层。 在包括贵金属层的基板的上表面上形成碳纳米管。 通过使用微波或感应线圈来进行包括碳纳米管的基板的热处理工艺。 热处理温度等于或低于400摄氏度。 贵金属层由选自包括Au，Ag，Cu的一种或多种元素和包含Au，Ag和Cu中的一种的合金构成。