Abstract:
A preparation method of ITO(indium tin oxide) synthesis composition is provided to apply the composition to ITO synthesis and ITO patterning processes and to derive formation of nano-scale structure through the ITO patterning and use of electron beam by using indium tert-butoxide and tin tert-butoxide as a precursor of the composition. The composition is produced by the steps of: forming first solution by mixing indium tert-butoxide, 1-benzoylacetone and methanol; forming second solution by mixing tin tert-butoxide, 1-benzolacetone and methanol; and blending the first solution and the second solution together. The first solution is obtained by admixing indium tert-butoxide and 1-benzoylacetone in 1:1 ratio, then adding methanol to the admixture. The second solution is obtained by admixing tin tert-butoxide and 1-benzoylacetone in 1:1 ration, then adding methanol to the admixture. All of the steps are conducted in a glove box with relative moisture of less than 5%.