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公开(公告)号：KR101636911B1
公开(公告)日：2016-07-06
申请号：KR1020090039886
申请日：2009-05-07
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: G03F7/004
Abstract: 무기물층의형성방법에관해개시되어있다. 개시된무기물층의형성방법은무기물의소오스층을레이저로어닐링하여무기물층으로변화시키는단계를포함할수 있다. 상기소오스층은반고체(semisolid) 상태일수 있다. 상기어닐링전, 예컨대, 전기유체역학적리소그래피(electrohydrodynamic lithography)(EHL) 법으로상기소오스층을패터닝할수 있다.
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公开(公告)号：KR1020180015851A
公开(公告)日：2018-02-14
申请号：KR1020160099366
申请日：2016-08-04
Applicant: 성균관대학교산학협력단
IPC: H01L29/87 , H01L29/66 , H01L27/092 , H01L29/423
CPC classification number: H01L29/87 , H01L27/0921 , H01L29/42308 , H01L29/66363 , H01L2924/1301
Abstract: 본발명의사이리스터는이산화바나듐(vanadium dioxide)으로구성된채널(channel); 상기채널의일단에연결된캐소드(cathode); 상기채널의타단에연결된애노드(anode); 상기채널과물리적으로이격된게이트(gate); 및상기채널과상기게이트사이에개재된유전체(dielectric)를포함한다.
Abstract translation: 本发明的晶闸管包括由二氧化钒构成的通道; 连接到通道一端的阴极; 连接到通道另一端的阳极; 与通道物理隔开的门; 介质介于通道和门之间。
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公开(公告)号：KR1020150111563A
公开(公告)日：2015-10-06
申请号：KR1020140034989
申请日：2014-03-26
Applicant: 성균관대학교산학협력단
IPC: H01L21/20
Abstract: 본발명은전자소자및 광소자에서채널물질로사용되는 VO박막의활용에있어요구되는고품질의 VO박막합성및 제조방법에관한것으로, RF 스퍼터링방법을이용하여박막을합성하고, 기판으로 III-V족에피택셜웨이퍼 (GaN)를사용한다. 본발명의합성법에따르면, GaN은사파이어와격자구조가유사해고품질의 VO박막이합성되고, 도핑을통해전도도제어가가능하다는장점이있어 VO박막기반전자소자의전극으로의활용이가능하며및 GaN이가지고있는광소자로서의활용에이점을가지고있다.
Abstract translation: 本发明涉及一种用于合成和制备可用作光学装置或电子装置中的通道材料的高品质VO_2薄膜的方法。 使用射频（RF）溅射法合成薄膜。 III-V族中的外延晶片（GaN）用作衬底。 根据本发明，合成方法使用具有类似于蓝宝石的栅格结构的GaN，以便合成高质量的VO_2薄膜。 VO_2薄膜还可以通过掺杂来控制电导率，并且可以在基于VO_2薄膜的电子器件的电极中或在包括GaN的光学器件中使用。
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公开(公告)号：KR1020140075971A
公开(公告)日：2014-06-20
申请号：KR1020120143824
申请日：2012-12-11
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B01J35/004 , B01J21/18 , B01J23/52 , B01J35/0013 , B01J35/0033 , B01J35/006 , H01L31/028 , Y02E10/547
Abstract: Disclosed graphene-nanoparticle structure includes a substrate; a graphene layer disposed on the substrate; and a nanoparticle layer disposed on the graphene layer. The graphene-nanoparticle structure may be formed by alternately stacking the graphene layer and the nanoparticle layer. The graphene-nanoparticle structure may play a role of a complex functional layer performing various functions according to the number of stacking and the selection of materials of the nanoparticles.
Abstract translation: 公开的石墨烯 - 纳米颗粒结构包括基材; 设置在基板上的石墨烯层; 以及设置在石墨烯层上的纳米颗粒层。 可以通过交替堆叠石墨烯层和纳米颗粒层来形成石墨烯纳米颗粒结构。 石墨烯纳米颗粒结构可以起到复合功能层的作用，根据层叠数量和纳米颗粒材料的选择来执行各种功能。
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公开(公告)号：KR1020070072269A
公开(公告)日：2007-07-04
申请号：KR1020050136331
申请日：2005-12-31
Applicant: 성균관대학교산학협력단
Inventor： 강대준
CPC classification number: C12M21/18 , B82Y40/00 , G01N2035/00158
Abstract: A three-dimensional micro/nano-structure is provided to be able to increase the sensitivity of a biochip without non-specific absorption by having an active enzyme, thereby increasing the reliability of a bio-sensor. The three-dimensional nano-structure includes a functional enzyme which is controllably prepared by layer-by-layer assembling of surface templates patterned by using the micro-contact printing manner. The method comprises the steps of: (a) printing an SAM strip as a resistant coating agent on a substrate having a cold surface; (b) filling an un-stamped area with an SAM which is made of biotin-terminated thiol; (c) assembling avidin on the biotinylated SAM area; and (d) binding a biotin-HRP to the avidin, wherein the steps (c) and (d) are repeated.
Abstract translation: 提供了三维微/纳米结构，以便能够通过具有活性酶来提高生物芯片的灵敏度，而无需非特异性吸收，从而提高生物传感器的可靠性。 三维纳米结构包括通过使用微接触印刷方式图案化的表面模板的层叠组装可控地制备的功能性酶。 该方法包括以下步骤：（a）在具有冷表面的基底上印刷作为抗性涂层剂的SAM条; （b）用生物素终止的硫醇制成的SAM填充未加盖的区域; （c）在生物素化的SAM区域上组装抗生物素蛋白; 和（d）将生物素-HRP与抗生物素蛋白结合，其中重复步骤（c）和（d）。
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Patent Agency Ranking
公开(公告)号：KR100663714B1
公开(公告)日：2007-01-03
申请号：KR1020050133293
申请日：2005-12-29
Applicant: 성균관대학교산학협력단
Abstract: A preparation method of ITO(indium tin oxide) synthesis composition is provided to apply the composition to ITO synthesis and ITO patterning processes and to derive formation of nano-scale structure through the ITO patterning and use of electron beam by using indium tert-butoxide and tin tert-butoxide as a precursor of the composition. The composition is produced by the steps of: forming first solution by mixing indium tert-butoxide, 1-benzoylacetone and methanol; forming second solution by mixing tin tert-butoxide, 1-benzolacetone and methanol; and blending the first solution and the second solution together. The first solution is obtained by admixing indium tert-butoxide and 1-benzoylacetone in 1:1 ratio, then adding methanol to the admixture. The second solution is obtained by admixing tin tert-butoxide and 1-benzoylacetone in 1:1 ration, then adding methanol to the admixture. All of the steps are conducted in a glove box with relative moisture of less than 5%.
Abstract translation: 提供ITO（铟锡氧化物）合成组合物的制备方法以将组合物应用于ITO合成和ITO图案化工艺，并通过ITO图案化和使用电子束通过使用叔丁醇铟形成纳米级结构 叔丁醇锡作为组合物的前体。 通过以下步骤制备组合物：通过混合叔丁醇铟，1-苯甲酰丙酮和甲醇形成第一溶液; 通过混合叔丁醇锡，1-苯并丙酮和甲醇形成第二溶液; 并将第一溶液和第二溶液混合在一起。 第一溶液通过以1:1的比例混合叔丁醇铟和1-苯甲酰丙酮，然后向混合物中加入甲醇而获得。 第二溶液通过以1:1配比混合叔丁醇锡和1-苯甲酰丙酮，然后向混合物中加入甲醇而获得。 所有步骤都在相对湿度小于5％的手套箱中进行。
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公开(公告)号：KR101870860B1
公开(公告)日：2018-06-27
申请号：KR1020160099366
申请日：2016-08-04
Applicant: 성균관대학교산학협력단
IPC: H01L29/87 , H01L29/66 , H01L27/092 , H01L29/423
Abstract: 본발명의사이리스터는이산화바나듐(vanadium dioxide)으로구성된채널(channel); 상기채널의일단에연결된캐소드(cathode); 상기채널의타단에연결된애노드(anode); 상기채널과물리적으로이격된게이트(gate); 및상기채널과상기게이트사이에개재된유전체(dielectric)를포함한다.
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公开(公告)号：KR1020140027602A
公开(公告)日：2014-03-07
申请号：KR1020120083517
申请日：2012-07-30
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01G11/36 , B82Y99/00 , H01G11/26 , H01G11/28 , H01G11/40 , Y02E60/13 , Y02T10/7022
Abstract: The disclosed electrode structure includes: a fabric conductive substrate; a first layer which is formed on the fabric conductive substrate and is composed of a plurality of one dimensional nanostructures; and a second layer which is formed on the first layer and is made of graphene materials. The first layer and the second layer are alternately stacked on the fabric conductive substrate one or more times. The disclosed electrode structure is used as a porous electrode for an energy storage device.
Abstract translation: 所公开的电极结构包括：织物导电基底; 第一层，其形成在所述织物导电基底上，并且由多个一维纳米结构构成; 以及形成在第一层上并由石墨烯材料制成的第二层。 第一层和第二层交替地层叠在织物导电基板上一次或多次。 所公开的电极结构用作能量存储装置的多孔电极。
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公开(公告)号：KR1020090108853A
公开(公告)日：2009-10-19
申请号：KR1020080034165
申请日：2008-04-14
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: G03F7/0002 , B81C1/00031 , B82Y10/00 , B82Y40/00 , G03F7/0042 , Y10T428/24322 , Y10T428/24479 , Y10T428/24942 , B82B3/00 , G03F7/004 , G03F7/0045 , G03F7/0047
Abstract: PURPOSE: A composition for forming inorganic pattern is provided to form inorganic pattern of nano or micro scale with low cost. CONSTITUTION: A composition for forming inorganic pattern comprises inorganic precursor, stabilizing agent, and solvent. The stabilizing agent is one or more selected from β-diketone and β-keto ester. A method for producing reaction mixture solution (20) of inorganic precursor, stabilizing agent of inorganic precursor and solvent comprises: a step of patterning mixture solution by electrohydrodynamic lithography and a step of evaporating solvent to obtain inorganic pattern.
Abstract translation: 目的：提供用于形成无机图案的组合物以低成本形成纳米或微尺度的无机图案。 构成：用于形成无机图案的组合物包括无机前体，稳定剂和溶剂。 稳定剂是选自β-二酮和β-酮酯中的一种或多种。 制备无机前体，无机前体和溶剂的稳定剂的反应混合物溶液（20）的方法包括：通过电动动力学光刻将混合溶液图案化的步骤和蒸发溶剂以获得无机图案的步骤。
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公开(公告)号：KR1020090088625A
公开(公告)日：2009-08-20
申请号：KR1020080014018
申请日：2008-02-15
Applicant: 삼성에스디아이 주식회사 , 성균관대학교산학협력단
Inventor： 강대준
CPC classification number: H01B1/08 , H01M4/0404 , H01M4/131 , H01M4/1391 , H01M4/366 , H01M4/483 , H01M4/485
Abstract: A negative electrode active material is provided to improve high efficient discharge capability of a battery and to obtain the increase of flat-band voltage zone, the decrease of over potential and the increase of battery capacity. A negative electrode active material comprises a titanium-based oxide core and titanium oxynitride formed on at least a part of the core surface. The titanium-based oxide core is coated by a coating layer consisting of titanium oxynitride. The titanium oxynitride is one or more oxides selected from group consisting of TiO2 and Li4+xTi5O12(-0.3
Abstract translation: 提供负极活性材料以提高电池的高效放电能力，并获得平带电压带的增加，过电位的降低和电池容量的增加。 负极活性物质包含形成在芯表面的至少一部分上的钛基氧化物核和氧氮化钛。 钛基氧化物芯被由氮氧化钛组成的涂层涂覆。 氮氧化钛是选自TiO 2和Li 4+ x Ti 5 O 12（-0.3
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