公开(公告)号：KR100845941B1

公开(公告)日：2008-07-14

申请号：KR1020070029594

申请日：2007-03-27

Applicant: 성균관대학교산학협력단

Inventor： 정동근 ,  양재영 ,  이성우

IPC: C23C16/00

CPC classification number: H01L21/02126 ,  B05D1/62 ,  B05D3/0254 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/3122

Abstract: Plasma polymerized low-k thin films with considerably low dielectric constant values are provided, and treatment methods are provided to improve dielectric constants and mechanical strengths of the low-k thin films. A manufacturing method of a low-k thin film comprises the steps of: depositing a plasma polymerized thin film onto a substrate(1) by a plasma enhanced chemical vapor deposition process using a polymer precursor material; and performing a post-heat treatment at a temperature of 300 to 550 deg.C and a pressure of 0.5 to 1.5 atmospheric pressure in a gas atmosphere containing oxygen gas or nitrogen gas for 1 to 5 minutes by using an RTA(Rapid Thermal Annealing) apparatus. The polymer precursor material is decamethylcyclopentasiloxane or cyclohexane. The step of performing the post-heat treatment comprises injecting the substrate into a chamber(70) of the RTA apparatus, and generating heat relative to the substrate by using a plurality of halogen lamps(80) disposed within the chamber.

Abstract translation: 提供具有相当低介电常数值的等离子体聚合低k薄膜，并且提供了处理方法以改善低k薄膜的介电常数和机械强度。 低k薄膜的制造方法包括以下步骤：通过使用聚合物前体材料的等离子体增强化学气相沉积方法将等离子体聚合的薄膜沉积到基底（1）上; 并使用RTA（快速热退火）在含有氧气或氮气的气体气氛中，在300〜550℃的温度和0.5〜1.5大气压的压力下进行1〜5分钟的后热处理， 仪器。 聚合物前体材料是十甲基环五硅氧烷或环己烷。 执行后热处理的步骤包括将基板注入到RTA装置的室（70）中，并且通过使用设置在室内的多个卤素灯（80）相对于基板产生热量。

公开(公告)号：KR100697669B1

公开(公告)日：2007-03-20

申请号：KR1020050126703

申请日：2005-12-21

Applicant: 성균관대학교산학협력단

Inventor： 양재영 ,  이성우 ,  정동근

IPC: H01L21/205

CPC classification number: H01L21/02274 ,  H01L21/02118 ,  H01L21/0234

Abstract: A method for manufacturing a low-k plasma-polymerized thin film and a low-k thin film are provided to improve a dielectric constant by using a plasma processing method or a thermal processing method. A precursor including deca-mesyl-cyclo-pentasil-oxane and cyclo-hexane is evaporated within bubblers(30,31) to evaporate a precursor solution. The evaporated precursor is discharged from the bubblers. The discharged precursor is induced into a reactor(50) for plasma deposition. A plasma-polymerized thin film is deposited on an upper surface of a substrate by using the plasma of the reactor.

Abstract translation: 提供了制造低k等离子体聚合薄膜和低k薄膜的方法，以通过使用等离子体处理方法或热处理方法来提高介电常数。 在鼓泡器（30,31）内蒸发包含十甲基 - 环戊二烯 - 恶烷和环己烷的前体以蒸发前体溶液。 蒸发的前体从起泡器中排出。 将排出的前体引入用于等离子体沉积的反应器（50）中。 通过使用反应器的等离子体将等离子体聚合的薄膜沉积在基板的上表面上。