公开(公告)号：KR1020090101571A

公开(公告)日：2009-09-29

申请号：KR1020080026784

申请日：2008-03-24

Applicant: 성균관대학교산학협력단

Inventor： 송준태 ,  이규일

IPC: H01L21/20 ,  G02F1/136 ,  H01L21/203 ,  C23C14/08

CPC classification number: H01L31/1884 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L31/022483 ,  Y02E10/50 ,  G02F1/136 ,  H01L21/2855 ,  H01L2924/01005

Abstract: PURPOSE: A boron-doped zinc oxide based transparent conductive film and a manufacturing method thereof are provided to implement an electrical and optical characteristic to replace an ITO. CONSTITUTION: A transparent conductive layer(21) is produced by doping boron to a ZnO target doped with Ga or Al. The transparent conductive layer is deposited on the substrate(10). The deposition method is the sputtering. At least other electrode layer(22,23) are stacked between the substrate and the transparent conductive layer.

Abstract translation: 目的：提供一种硼掺杂的氧化锌基透明导电膜及其制造方法，以实现电和光特性来替代ITO。 构成：通过将硼掺杂到掺杂有Ga或Al的ZnO靶产生透明导电层（21）。 透明导电层沉积在基底（10）上。 沉积法是溅射。 至少其他电极层（22,23）堆叠在基板和透明导电层之间。