-
公开(公告)号：KR101011284B1
公开(公告)日：2011-01-28
申请号：KR1020080069101
申请日：2008-07-16
Applicant: 성균관대학교산학협력단
IPC: H01L41/047
Abstract: 투명 압전 소자 및 그 형성방법이 제공된다. 상기 투명 압전 소자는 기판, 상기 기판 상의 산화물 하부 전극, 상기 산화물 하부 전극 상의, 압전 효과를 가지는 알루미늄 질화막(AlN), 및 상기 알루미늄 질화막 상의 산화물 상부 전극을 포함한다.
압전 효과, 투과율, 알루미늄 질화막-
Patent Agency Ranking
公开(公告)号：KR100865911B1
公开(公告)日：2008-10-29
申请号：KR1020070011531
申请日：2007-02-05
Applicant: 성균관대학교산학협력단
IPC: B81C1/00
CPC classification number: B81C1/00944 , B81C2201/0108
Abstract: 본 발명은 미세 구조물 제조방법에 관한 것으로서, 더욱 상세하게는 초소형 정밀기계(Micro Electro Mechanical System, MEMS)의 구조물 제조방법에 있어서, 실리콘 기판위에 희생층 물질을 도포하여 패터닝(patterning)하고, 상기 희생층 물질과 동일한 물질의 포스트를 형성하는 공정을 포함하는 제조방법을 제공함으로써, 미세 구조물 제조 시 점착을 미연에 방지하며, 1번의 공정만을 추가하여 간편하게 포스트를 제조할 수 있고, 희생층 물질로 포토레지스트를 사용하기 때문에 원하는 형태의 희생층을 쉽게 제작할 수 있는 등의 효과가 있다.
미세 구조물, 초소형 정밀기계(Micro Electro Mechanical System, MEMS), 포스트(post), 포토레지스트-
公开(公告)号：KR1020090101571A
公开(公告)日：2009-09-29
申请号：KR1020080026784
申请日：2008-03-24
Applicant: 성균관대학교산학협력단
IPC: H01L21/20 , G02F1/136 , H01L21/203 , C23C14/08
CPC classification number: H01L31/1884 , H01L21/02554 , H01L21/02573 , H01L21/02631 , H01L31/022483 , Y02E10/50 , G02F1/136 , H01L21/2855 , H01L2924/01005
Abstract: PURPOSE: A boron-doped zinc oxide based transparent conductive film and a manufacturing method thereof are provided to implement an electrical and optical characteristic to replace an ITO. CONSTITUTION: A transparent conductive layer(21) is produced by doping boron to a ZnO target doped with Ga or Al. The transparent conductive layer is deposited on the substrate(10). The deposition method is the sputtering. At least other electrode layer(22,23) are stacked between the substrate and the transparent conductive layer.
Abstract translation: 目的：提供一种硼掺杂的氧化锌基透明导电膜及其制造方法，以实现电和光特性来替代ITO。 构成：通过将硼掺杂到掺杂有Ga或Al的ZnO靶产生透明导电层（21）。 透明导电层沉积在基底（10）上。 沉积法是溅射。 至少其他电极层（22,23）堆叠在基板和透明导电层之间。
-
公开(公告)号：KR100847528B1
公开(公告)日：2008-07-22
申请号：KR1020070011518
申请日：2007-02-05
Applicant: 성균관대학교산학협력단
CPC classification number: H03H3/02 , H03H9/02133 , H03H9/105 , H03H9/173 , H03H2003/021
Abstract: A film bulk acoustic resonator and a manufacturing method thereof are provided to improve strength and a resonance frequency property of a support layer by enhancing a coupling property between an electrode and a piezoelectric layer. A film bulk acoustic resonator includes a substrate(100), a support layer(200), a lower aluminum electrode(300), a buffer layer(400), a zinc oxide piezoelectric layer(500), and an upper aluminum electrode(600). The support layer is formed on the substrate. The lower aluminum electrode is formed on the support layer. The buffer layer is formed on the lower aluminum electrode. The zinc oxide piezoelectric layer is formed on the buffer layer. The upper aluminum electrode is formed on the zinc oxide piezoelectric layer.
Abstract translation: 提供一种膜体声波谐振器及其制造方法，用于通过增强电极和压电体层之间的耦合特性来提高支撑层的强度和谐振频率特性。 薄膜体声波谐振器包括基板（100），支撑层（200），下铝电极（300），缓冲层（400），氧化锌压电层（500）和上铝电极（600） ）。 支撑层形成在基板上。 下部铝电极形成在支撑层上。 缓冲层形成在下铝电极上。 氧化锌压电层形成在缓冲层上。 上部铝电极形成在氧化锌压电层上。
-
公开(公告)号：KR1020100008555A
公开(公告)日：2010-01-26
申请号：KR1020080069101
申请日：2008-07-16
Applicant: 성균관대학교산학협력단
IPC: H01L41/047
CPC classification number: H01L41/0478 , H01L41/314
Abstract: PURPOSE: A transparent piezoelectric device with high transmittance using an oxide electrode and a method for forming the same are provided to improve transmittance of the transparent piezoelectric device by forming an aluminum nitride film on an oxide bottom electrode. CONSTITUTION: A transparent piezoelectric device includes a substrate(10), an oxide bottom electrode(20), an aluminum nitride film(30), and an oxide top electrode(40). The substrate is a glass or plastic substrate. The oxide bottom electrode is formed on the substrate. The aluminum nitride film is formed on the oxide bottom electrode and has the piezoelectric effect. The oxide top electrode is formed on the aluminum nitride film. The oxide bottom electrode and the oxide top electrode include the aluminum zinc oxide.
Abstract translation: 目的：提供使用氧化物电极具有高透射率的透明压电装置及其形成方法，以通过在氧化物底部电极上形成氮化铝膜来改善透明压电装置的透射率。 构成：透明压电装置包括基板（10），氧化物底电极（20），氮化铝膜（30）和氧化物顶电极（40）。 基板是玻璃或塑料基板。 氧化物底电极形成在基板上。 氮化铝膜形成在氧化物底部电极上并具有压电效应。 氧化物顶部电极形成在氮化铝膜上。 氧化物底部电极和氧化物顶部电极包括氧化铝铝。
-
公开(公告)号：KR1020080073034A
公开(公告)日：2008-08-08
申请号：KR1020070011531
申请日：2007-02-05
Applicant: 성균관대학교산학협력단
IPC: B81C1/00
CPC classification number: B81C1/00944 , B81C2201/0108
Abstract: A fabricating method of microstructures is provided to prevent adhesion beforehand by pattering sacrificial layer material formed on a substrate and forming a post of the same material as the sacrificial layer material. A fabricating method of microstructures includes the steps of: spreading and pattering photoresist on a silicon substrate(100) as a sacrificial layer(200); forming a post(300) by using photoresist which is the same material as the sacrificial layer; evaporating an aluminum structure layer(400) by using an evaporator; removing the post with oxygen plasma asher, and leaving a large suspended part or a cantilever which is the aluminum structure layer.
Abstract translation: 提供一种微结构的制造方法，以通过图案化形成在基板上的牺牲层材料和形成与牺牲层材料相同的材料的柱来预先粘附。 微结构的制造方法包括以下步骤：在作为牺牲层（200）的硅衬底（100）上铺展和图案化光刻胶; 通过使用与牺牲层相同的材料的光致抗蚀剂形成柱（300）; 通过使用蒸发器蒸发铝结构层（400）; 用氧等离子体灰浆除去柱子，并留下作为铝结构层的大悬浮部分或悬臂。
-
-
-
-
-
Search Results
6
records
(took 0.022 seconds)
