公开(公告)号：KR1020130103877A

公开(公告)日：2013-09-25

申请号：KR1020120024853

申请日：2012-03-12

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  정병오

IPC: H01L21/203 ,  C23C14/35

Abstract: PURPOSE: A method for forming a thin film transparent top electrode of an optical device with a sputtering method is provided to simplify manufacturing processes by directly depositing the thin film transparent top electrode on the end of a nanowire with the sputtering method. CONSTITUTION: A substrate (120) with a nanowire is arranged on one side of a reaction chamber. A sputtering target (110) is arranged on the other side of the reaction chamber. An RF magnetron sputtering process is performed in the reaction chamber under reference pressure, reference temperatures, and reference time. The substrate faces the end (122) of the nanowire. A thin film transparent top electrode is formed on the end of the nanowire.

Abstract translation: 目的：提供一种通过溅射法形成光学器件的薄膜透明顶部电极的方法，以通过溅射方法在纳米线的末端直接沉积薄膜透明顶部电极来简化制造工艺。 构成：具有纳米线的衬底（120）布置在反应室的一侧。 溅射靶（110）布置在反应室的另一侧。 在参考压力，参考温度和参考时间下，在反应室中进行RF磁控溅射工艺。 衬底面向纳米线的端部（122）。 在纳米线的末端形成薄膜透明顶部电极。