公开(公告)号：KR1020090105911A

公开(公告)日：2009-10-07

申请号：KR1020097010770

申请日：2008-01-10

Applicant: 소이텍

Inventor： 아스파베르나르 ,  라가헤블랑샤르크리스텔레 ,  수비니콜라

IPC: B81C1/00

CPC classification number: B81C1/00952 ,  B81B3/001 ,  B81C2201/115

Abstract: The invention relates to a process of forming a rough interface (12) in a semiconductor substrate (2), comprising: the formation, on a surface (4) of said substrate, of a zone of irregularities (8) in or on an oxide or a material (6) that may be oxidized, the formation of roughnesses in or on the semiconductor substrate (2) by thermal oxidation of or through this material or this oxide (6) and a part of the semiconductor substrate.

Abstract translation: 本发明涉及在半导体衬底（2）中形成粗糙界面（12）的方法，包括：在所述衬底的表面（4）上形成在氧化物中或氧化物上的不规则区域（8） 或可能被氧化的材料（6），通过或通过该材料或该氧化物（6）和半导体衬底的一部分的热氧化在半导体衬底（2）中或之上形成粗糙度。

公开(公告)号：KR1020090105910A

公开(公告)日：2009-10-07

申请号：KR1020097010768

申请日：2008-01-10

Applicant: 소이텍

Inventor： 아스파베르나르 ,  라가헤블랑샤르크리스텔레 ,  수비니콜라

IPC: B81C1/00

CPC classification number: B81B3/001 ,  B81C1/00952 ,  B81C2201/115

Abstract: The invention relates to a process for forming a semiconductor component with a buried rough interface comprising: a) the formation of a rough interface (22) of predetermined roughness R2 in a first semiconductor substrate (16), with: * the selection of a semiconductor substrate (16), presenting a surface (14) with roughness R1>R2, * a thermal oxidation step for this substrate until an oxide-semiconductor interface (22) of roughness R2 is obtained, b) preparation of the oxidized surface of this first semiconductor substrate in view of assembly with a second substrate, c) the assembly of the surface of the oxide and of the second substrate.

Abstract translation: 本发明涉及一种用于形成具有掩埋粗糙界面的半导体部件的方法，包括：a）在第一半导体衬底（16）中形成预定粗糙度R2的粗糙界面（22），其中：*选择半导体 衬底（16），其具有粗糙度R1> R2的表面（14），*用于该衬底的热氧化步骤，直到获得粗糙度R2的氧化物半导体界面（22），b）制备该第一 半导体衬底，与第二衬底组装，c）氧化物和第二衬底的表面的组装。