公开(公告)号：KR1020060135515A

公开(公告)日：2006-12-29

申请号：KR1020060055817

申请日：2006-06-21

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 이시바시케이지 ,  하치고아키히로 ,  니시우라타카유키

IPC: H01L21/20 ,  H01L21/302 ,  H01L33/16

CPC classification number: H01L21/3043 ,  B23H7/02 ,  B23H9/00

Abstract: A method for machining a nitride semiconductor crystal is provided to easily and effectively work the nitride semiconductor crystal by partially removing and working the crystal by local heat generated by discharge. When a nitride semiconductor crystal(1) is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode(3) to produce electrical discharge, so that the nitride semiconductor crystal is partially removed and worked by local heat generated by the electrical discharge. The nitride semiconductor crystal is cut using a wire electrode as the tool electrode. The wire electrode is made of tungsten or molybdenum.

Abstract translation: 提供了一种用于加工氮化物半导体晶体的方法，以便通过由放电产生的局部热部分去除和加工晶体来容易且有效地加工氮化物半导体晶体。 当加工氮化物半导体晶体（1）时，在氮化物半导体晶体和工具电极（3）之间施加电压以产生放电，从而通过放电产生的局部热部分去除和加工氮化物半导体晶体 。 使用线电极作为工具电极切割氮化物半导体晶体。 线电极由钨或钼制成。

公开(公告)号：KR1020060127752A

公开(公告)日：2006-12-13

申请号：KR1020060049078

申请日：2006-05-30

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 하치고아키히로 ,  니시우라타카유키

IPC: H01S5/343

CPC classification number: G01N21/9501 ,  G01N21/6489

Abstract: A damage evaluation method of a compound semiconductor member, a production method thereof, a gallium nitride compound semiconductor member, and a gallium nitride compound semiconductor membrane are provided to evaluate a degree of damage on a surface of the compound semiconductor member in detail by improving the evaluation method. A photoluminescence measurement process measures photoluminescence on a surface of a compound semiconductor member(S1). An evaluation process is performed to evaluate damage on the surface of the compound semiconductor member by using a half width of a peak at a wavelength corresponding to a band gap of the compound semiconductor member in an emission spectrum(S2). The emission spectrum is obtained by the photoluminescence measurement process.

Abstract translation: 提供化合物半导体部件的损伤评价方法，其制造方法，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜，以通过改善化合物半导体部件的表面的损伤程度 评估方法。 光致发光测定工序测定化合物半导体部件的表面上的光致发光（S1）。 通过在发光光谱中使用与化合物半导体部件的带隙对应的波长的峰值的半值宽度来进行评价处理来评价化合物半导体部件的表面的损伤（S2）。 通过光致发光测定法得到发光光谱。