公开(公告)号：KR1020070026310A

公开(公告)日：2007-03-08

申请号：KR1020067005950

申请日：2005-04-25

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 호리에유스케 ,  니시우라다카유키 ,  우에무라도모키

IPC: H01L21/304

CPC classification number: H01L21/02052 ,  Y10T428/265

Abstract: A GaAs substrate cleaning method by which less number of foreign materials are deposited after cleaning. The cleaning method is composed of an acid cleaning process (S11), a pure water rinsing process (S12) and a spin-dry process (S13). First, the acid cleaning process (S11) is performed by impregnating a GaAs substrate having a mirror-polished surface in an acid cleaning solution. In the acid cleaning process, a cleaning time is less than 30 seconds. Then, the pure water rinsing process (S12) is performed by washing away the cleaning solution on the cleaned GaAs substrate with pure water. Then, the spin dry process (S13) is performed to dry the GaAs substrate having the pure water thereon. Thus, the GaAs substrate whereupon less number of foreign materials are deposited after cleaning is provided. ® KIPO & WIPO 2007

Abstract translation: 清洗后少量异物沉积的GaAs衬底清洗方法。 清洗方法由酸洗工艺（S11），纯水漂洗工艺（S12）和旋干工艺（S13）组成。 首先，通过将具有镜面抛光表面的GaAs衬底浸渍在酸性清洗溶液中来进行酸洗处理（S11）。 在酸洗过程中，清洗时间少于30秒。 然后，通过用纯水将清洁的GaAs基板上的清洗液清洗，进行纯水冲洗处理（S12）。 然后，进行旋转干燥处理（S13），使其上具有纯水的GaAs衬底干燥。 因此，提供了GaAs衬底，因此在清洁之后沉积少量异物。 ®KIPO＆WIPO 2007

公开(公告)号：KR1020060128679A

公开(公告)日：2006-12-14

申请号：KR1020060050899

申请日：2006-06-07

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 니시우라다카유키 ,  호리에유스케 ,  츠보쿠라미츠타카 ,  오하마오사무

IPC: H01L21/20 ,  H01L29/739

CPC classification number: H01L29/207 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02658

Abstract: A compound semiconductor substrate and a method for manufacturing the same, and an epitaxial substrate and a manufacturing method thereof are provided to have desired target surface electrical properties. A substrate(12) is composed of a p-type compound semiconductor. A material(14) includes a p-type impurity atom, and is bonded with a surface of the substrate. The material includes zinc as the impurity atom. The material includes magnesium as the impurity atom. The material includes hydrocarbon. The hydrocarbon is aromatic hydrocarbon. The material includes fatty acid or fatty acid derivative. A concentration of the material in the surface ranges from 5Î10^11/cm^2 to 5Î10^15/cm^2. The substrate includes GaAs, InP, GaN, or AlN.

Abstract translation: 化合物半导体衬底及其制造方法，外延衬底及其制造方法被提供以具有期望的目标表面电性能。 基板（12）由p型化合物半导体构成。 材料（14）包括p型杂质原子，并且与衬底的表面接合。 该材料包括锌作为杂质原子。 该材料包括镁作为杂质原子。 该材料包括碳氢化合物。 烃是芳族烃。 该物质包括脂肪酸或脂肪酸衍生物。 表面材料的浓度范围为5〜10 ^ 11 / cm ^ 2〜5×10 ^ 15 / cm ^ 2。 衬底包括GaAs，InP，GaN或AlN。