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公开(公告)号：KR1020150073929A
公开(公告)日：2015-07-01
申请号：KR1020150086090
申请日：2015-06-17
Applicant: 실트로닉 아게
IPC: H01L21/02 , H01L21/463
CPC classification number: H01L21/02052 , B08B3/12
Abstract: 높은파티클제거율을안정적으로얻을수 있는초음파세정방법및 초음파세정장치를제공한다. 초음파세정방법은, 기체가용존된액체에초음파를조사함으로써액체중의세정대상물을세정하기위한초음파세정방법으로서, 이하의단계를갖는다. 기체가용존된액체가준비된다(S10). 액체에초음파를조사하면서액체중에서기포를발생시켜, 액체에용존된기체를포함하는기포가계속해서발생하는상태가실현된다(S20). 기체를포함하는기포가계속해서발생하는상태에서세정대상물이세정된다.
Abstract translation: 提供了可以稳定地获得高颗粒去除率的超声波清洗方法和超声波清洗装置。 通过在溶解有气体的液体上照射超声波来清洗液体的清洗对象的超声波清洗方法包括以下步骤：制备溶解有气体的液体（S10）。 通过在液体中照射超声波而在液体中产生气泡，并且实现连续产生包含溶解在液体中的气体的气泡的状态（S20）。 并且在连续产生包括气体的气泡的状态下清洁清洁目标。
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公开(公告)号：KR101226392B1
公开(公告)日：2013-01-24
申请号：KR1020110037377
申请日：2011-04-21
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: H01L21/02052 , B08B3/10 , H01L21/02057
Abstract: 본 발명은 반도체 웨이퍼의 습식 화학적 처리 방법에 관한 것으로, a) 반도체 웨이퍼를 회전시키는 단계; b) 100㎛ 이하의 직경을 갖는 기포(gas bubble)를 포함하는 세정액(cleaning liquid)을 회전하는 반도체 웨이퍼에 도포하여, 반도체 웨이퍼위에 액상 필름을 형성하는 단계; c) 회전하는 반도체 웨이퍼를 반응성 기체를 갖는 기체 분위기에 노출시키는 단계; d) 액상 필름을 제거하는 단계를 포함한다.
[색인어]
반도체 웨이퍼, 습식 화학적 처리, 마이크로버블-
公开(公告)号：KR1020090059034A
公开(公告)日：2009-06-10
申请号：KR1020080112768
申请日：2008-11-13
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: H01L21/02052 , B08B3/10 , H01L21/02057
Abstract: A method for wet-chemically processing a semiconductor wafer is provided to improve efficiency of a wet-chemical process of the semiconductor wafer by improving a gas element inside a liquid film. A semiconductor wafer rotates. A cleaning liquid is coated on the rotating semiconductor wafer and the liquefied film is formed on the semiconductor wafer. The cleaning liquid has gas bubbles with a diameter below 100 um. The rotating semiconductor wafer is exposed to the air with the reactive gas. The liquefied film is eliminated. The bubble includes the air or mixture selected among the group of the air, the nitrogen, the argon, helium, the hydrogen, the carbon dioxide, the ozone and the mixture thereof.
Abstract translation: 提供一种用于湿式化学处理半导体晶片的方法，以通过改进液膜内的气体元件来提高半导体晶片的湿化学处理的效率。 半导体晶片旋转。 在旋转的半导体晶片上涂布清洗液，在半导体晶片上形成液化膜。 清洗液具有直径小于100um的气泡。 旋转的半导体晶片与反应气体暴露于空气。 液化膜被消除。 气泡包括选自空气，氮气，氩气，氦气，氢气，二氧化碳，臭氧及其混合物中的空气或混合物。
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公开(公告)号：KR1020080061266A
公开(公告)日：2008-07-02
申请号：KR1020070121431
申请日：2007-11-27
Applicant: 실트로닉 아게
CPC classification number: C11D1/00 , C11D11/0047 , C11D11/007
Abstract: A cleaning solution for electronic materials is provided to realize excellent cleaning activity particularly in the field of cleaning of semiconductors, such as silicon wafers, in a cost-efficient manner. A cleaning solution for electronic materials comprises an aqueous liquid comprising microbubbles generated by hydrogen gas and subjected to ultrasonic vibration. The aqueous liquid includes ultrapure water or hydrogenated water. A process for cleaning an electronic material is carried out in an aqueous liquid containing hydrogen microbubbles under the irradiation of ultrasonic waves.
Abstract translation: 提供一种用于电子材料的清洁溶液，以成本有效的方式，特别是在半导体如硅晶片的清洁领域中实现优异的清洁活性。 用于电子材料的清洁溶液包括含有由氢气产生的微泡并经受超声波振动的含水液体。 含水液体包括超纯水或氢化水。 在超声波的照射下，在含有氢微泡的含水液体中进行电子材料的清洗处理。
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Patent Agency Ranking
公开(公告)号：KR101434757B1
公开(公告)日：2014-08-26
申请号：KR1020120151296
申请日：2012-12-21
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: B08B3/12 , B06B2201/71 , H01L21/02052 , H01L21/67057
Abstract: 본 발명은 안정되게 높은 입자 제거 효율을 얻을 수 있는 초음파 세정 방법을 제공하는 것을 목적으로 한다.
초음파 세정 방법은, 기체가 용존된 용액에 초음파를 조사함으로써 용액 중의 세정 대상물을 세정하기 위한 초음파 세정 방법으로서, 이하의 단계를 포함하고 있다. 제1 용존 기체 농도를 갖는 용액에 초음파가 조사된다. 용액에 초음파를 조사하는 상태에서, 용액 중의 용존 기체 농도가 제1 용존 기체 농도로부터 제1 용존 기체 농도보다 낮은 제2 용존 기체 농도로 변경된다. 제1 용존 기체 농도로부터 제2 용존 기체 농도까지 용액 중의 용존 기체 농도가 변경되는 동안, 용액에 초음파를 조사함으로써 소노루미네센스가 발생한다.-
公开(公告)号：KR1020130132286A
公开(公告)日：2013-12-04
申请号：KR1020130057015
申请日：2013-05-21
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: H01L21/02052 , B08B3/12
Abstract: Provided are an ultrasonic cleaning method and a device thereof capable of stably obtaining a high particle removal ratio. The ultrasonic cleaning method for cleaning a cleaned object of liquids by irradiating ultrasonic waves to the liquids which gas is dissolved comprises a step for preparing the liquids which the gas is dissolved (S10); a step for performing an environment which bubbles including the gas, which is dissolved in the liquids, are continuously generated by irradiating the ultrasonic waves to the liquids and generating the bubbles in the liquids (S20); and a step for cleaning the cleaned object in the environment which the bubbles including the gas are continuously generated (S30). [Reference numerals] (S10) Liquid preparation step;(S20) Bubble introduction step;(S30) Washing step
Abstract translation: 提供能够稳定地获得高颗粒去除率的超声波清洗方法及其装置。 用于通过向溶解的液体照射超声波来清洁被清洁物体的超声波清洗方法包括制备气体溶解的液体的步骤（S10）; 通过向液体照射超声波并在液体中产生气泡，进行包括溶解在液体中的气体的气泡的环境的步骤（S20）; 以及在连续产生包括气体的气泡的环境中清洁被清洁物体的步骤（S30）。 （附图标记）（S10）液体制备步骤;（S20）气泡引入步骤;（S30）洗涤步骤
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公开(公告)号：KR1020130132270A
公开(公告)日：2013-12-04
申请号：KR1020130053069
申请日：2013-05-10
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: H01L21/67057 , B08B3/12
Abstract: Provided is an ultrasonic cleaning method capable of obtaining a high particle removal rate and an ultrasonic cleaning apparatus. The ultrasonic cleaning method for cleaning an object in a liquid (1) by supplying ultrasonic wave to the liquid including gas (2) includes preparing the liquid including oxygen gas. The liquid (1) is mixed while the ultrasonic wave is supplied to the liquid (1). Bubbles including gas (2) in the liquid (1) are realized. The object is cleaned by using the Bubble including gas (2). [Reference numerals] (AA,BB) Overflow
Abstract translation: 提供能够获得高颗粒去除率的超声波清洗方法和超声波清洗装置。 用于通过向包括气体（2）的液体提供超声波来清洗液体（1）中的物体的超声波清洗方法包括制备包括氧气的液体。 将液体（1）混合，同时向液体（1）供给超声波。 实现了在液体（1）中包括气体（2）的气泡。 通过使用包括气体（2）的气泡来清洁物体。 （附图标记）（AA，BB）溢出
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公开(公告)号：KR1020130088068A
公开(公告)日：2013-08-07
申请号：KR1020130009733
申请日：2013-01-29
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: B08B3/12
Abstract: PURPOSE: A cleaning method is provided to efficiently remove a foreign material of a specific size by changing the dissolved nitrogen content of the cleaning solution according to the size of a foreign material. CONSTITUTION: A cleaning solution is prepared (S10). Ultrasound is applied to the cleaning solution and an object is dipped into the cleaning solution to perform a cleaning process (S20). The dissolved nitrogen content of the cleaning solution is adjusted according to the size of a foreign material with the highest efficiency which is removed from the object. The diameter of the foreign material with the highest efficiency is 0.12 μm or more. The dissolved nitrogen content of the cleaning solution is 3 to 5 ppm or 6 to 11 ppm. [Reference numerals] (S10) Preparation step; (S20) Cleaning step
Abstract translation: 目的：提供一种清洁方法，通过根据异物的尺寸改变清洗溶液的溶解氮含量，有效地除去特定尺寸的异物。 规定：准备清洁液（S10）。 将超声波施加到清洁溶液上，并将物体浸入清洁溶液中以进行清洁处理（S20）。 根据从物体中除去的效率最高的异物的尺寸调节清洗溶液的溶解氮含量。 最高效率的异物的直径为0.12μm以上。 清洗液的溶解氮含量为3〜5ppm或6〜11ppm。 （附图标记）（S10）制备步骤 （S20）清洁步骤
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公开(公告)号：KR1020130074754A
公开(公告)日：2013-07-04
申请号：KR1020120151296
申请日：2012-12-21
Applicant: 실트로닉 아게
IPC: H01L21/302
CPC classification number: B08B3/12 , B06B2201/71 , H01L21/02052 , H01L21/67057
Abstract: PURPOSE: An ultrasonic cleaning method is provided to easily clean an object in a solution by irradiating ultrasonic waves to the solution with a dissolved gas. CONSTITUTION: The dissolved gas concentration of a solution is controlled to a first dissolved gas concentration (S11). The irradiation of ultrasonic waves to the solution with the first dissolved gas concentration is started (S12). The dissolved gas concentration of the solution is controlled to a second dissolved gas concentration (S13). The irradiation of the ultrasonic waves is stopped (S14). [Reference numerals] (S11) Dissolved gas concentration is controlled to a first dissolved gas concentration; (S12) Irradiation of ultrasonic waves is started; (S13) Dissolved gas concentration of the solution is controlled to a second dissolved gas concentration; (S14) Irradiation of the ultrasonic waves is stopped
Abstract translation: 目的：提供一种超声波清洗方法，通过用溶解的气体将溶液中的超声波照射到溶液中来容易地清洗溶液中的物体。 构成：将溶液的溶解气体浓度控制为第一溶解气体浓度（S11）。 开始向第一溶解气体浓度的溶液照射超声波（S12）。 将溶液的溶解气体浓度控制为第二溶解气体浓度（S13）。 超声波的照射停止（S14）。 （附图标记）（S11）将溶解气体浓度控制为第一溶解气体浓度; （S12）开始超声波的照射; （S13）将溶液的溶解气体浓度控制为第二溶解气体浓度; （S14）停止超声波的照射
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