Abstract:
PURPOSE: A method for manufacturing a contactless device is provided to mount a control element via a penetration unit, to charge epoxy, and to bond wires, thereby reducing failure by preventing damage to a mounting element and the wires. CONSTITUTION: A method for manufacturing a contactless device includes the following steps of: press-processing a lead frame in which lead and an element mounting surface are formed at a predetermine form (S10); forming a lower element mold with a penetration unit on which the control element can be mounted (S20); mounting the formed lower element mold on the underside of the lead frame and mounting an upper element mold on the top surface of the lead frame (S30); mounting the control element via the penetration unit of the lower element mold and wire-bonding a gap between the control element and the lead (S40); charging epoxy for element protection inside the penetration unit of the lower element mold (S50); wire-bonding and joining a cover after charging epoxy inside the opening unit (S60); removing a lead supporting unit of the lead frame (S70); and completing the manufacture of the contactless device by bending the lead. [Reference numerals] (S10) Processing a lead frame; (S20) Forming a lower element mold; (S30) Mounting the formed lower element mold; (S40) Mounting the control element and wire-bonding; (S50) Charging epoxy; (S51) Mounting a lower cover; (S60) Mounting a detecting element; (S70) Removing a lead supporting unit; (S80) Bending a lead
Abstract:
본 발명은 비분산 적외선 가스 분석 장치의 광검출기를 이루는 밴드패스필터의 위치 및 써모파일의 구조를 개선하여 보다 높은 감도를 가지며, 동시에 보다 정확하고 섬세한 감지 능력을 발휘할 수 있도록 한 써모파일을 이용한 비분산 적외선 가스 분석 장치에 관한 것으로, 상기 광검출기는, 하부실리콘기판과, 상기 하부실리콘기판의 상부에 형성되는 다이아프레임막과, 상기 다이아프레임막의 상부에 형성되는 제1열전물질과 제2열전물질로 이루어진 열전쌍과, 상기 열전쌍 상부에 형성되는 절연막과, 상기 절연막 및 다이아프레임막에 형성된 에치홀을 통해 상기 하부실리콘기판을 식각시켜 형성한 에어갭을 포함하여 된 써모파일과; 상부실리콘기판과, 상기 상부실리콘기판의 하부에 적외선투과창을 구분지어 주고 상기 하부실리콘기판과의 열적 고립을 위하여 식각 형성된 에어갭으로 이루어진 밴드패스필터를 형성하고; 상기 써모파일과 밴드패스필터를 웨이퍼 본딩 하여 구성된 것을 특징으로 한다.
Abstract:
PURPOSE: A non-dispersive infrared ray gas analyzing device using thermopile is provided to enable to obtain much higher sensitivity when wafer packaging in a vacuum condition. CONSTITUTION: A non-dispersive infrared ray gas analyzing device using thermopile comprises an upper case(20), a lower case, a photo detector(50), and an infrared ray source. A membrane is mounted on the top of the upper case. The lower case is joined to the lower case. A light source insertion hole where an infrared light source is inserted is formed in one side of the lower case. An optical detector insertion hole where an optical detector is inserted is formed in the other side of the lower case. The optical detector and infrared light source are fixed and installed on the PCB(Printed Circuit Board) at a constant interval. Lights projected from the infrared light source are received by the optical detector through a light cavity where the upper and lower cases form. [Reference numerals] (AA) Infrared ray light source
Abstract:
PURPOSE: A non-contact element is provided to reduce production costs by using cheap epoxy which protects an element and is filled in a lower element mold. CONSTITUTION: A lower cover for covering an element mold is mounted (S51). A sensing element is mounted through the opening part of an upper element mold. A wire bonding process is performed. A cover is bonded to the sensing element by filling the opening with epoxy (S60). The lead support is removed from the lead frame (S70). A lead is bent (S80). [Reference numerals] (S10) Lead frame processing step; (S20) Lower device molding step; (S30) Device mold equipping step; (S40) Device mounting and wire bonding step; (S50) Epoxy filling step; (S51) Lower cover mounting step; (S60) Sensing device mounting step; (S70) Lead support removal step; (S80) Lead bending step
Abstract:
PURPOSE: A micro-type pressure sensor and a method for manufacturing the same are provided to reduce a size of an element if the element of the same size has higher sensitivity or the same sensitivity, thereby miniaturizing and reducing costs. CONSTITUTION: A micro-type pressure sensor comprises a silicon substrate(10), an oxide layer, a nitride layer, a piezo resistor(16), an electrode(18), and a membrane(20). A single crystal silicon layer is formed in the upper part of the silicon substrate. The oxide and nitride layers are successively evaporated in the upper and lower parts of the silicon substrate. The piezo resistor is formed at a predetermined position of the upper part of the silicon substrate through implantation. The electrode is connected and formed in between a pad of the upper part of the silicon substrate and the piezo resistor. The membrane is exposed by etching the lower part of the silicon substrate, thereby being formed. A concavo-convex part(30) is formed in the upper or lower part of the membrane.
Abstract:
PURPOSE: A wafer level packaged device with a hermetic seal inspection part and a manufacturing method thereof are provided to improve device reliability and performance by revising device characteristics according to changes in the degree of a vacuum while monitoring a sealing state inside a package in real time. CONSTITUTION: A main apparatus part(20) is formed on a silicon substrate(10). A hermetic seal inspection part(30) is formed at a predetermined portion on the silicon substrate. The hermetic seal inspection part performs a hermetic seal test. The hermetic seal inspection part forms a sensing film by arranging a heater electrode(14) on an upper portion of a sensing electrode(16). The hermetic seal inspection part monitors the degree of a vacuum in a package device in real time.