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公开(公告)号：KR101261548B1
公开(公告)日：2013-05-09
申请号：KR1020110066555
申请日：2011-07-05
Applicant: 연세대학교 산학협력단
IPC: H01L21/205
Abstract: 본발명의일 실시예에따른탄소박막제조방법은반응공간에탄소원으로할로겐화탄소를공급하고, 상기반응공간에반응물을공급하되, 상기반응물은상기할로겐화탄소의할로겐원소에대하여탄소보다큰 결합에너지를갖는물질을포함하는것을특징으로한다.
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公开(公告)号：KR101116857B1
公开(公告)日：2012-03-06
申请号：KR1020100047053
申请日：2010-05-19
Applicant: 연세대학교 산학협력단
IPC: H01L31/042
CPC classification number: Y02E10/50
Abstract: 태양전지는기판, 제1 도전형반도체층, 진성반도체층, 제2 도전형반도체층, 제1 전극및 제2 전극을포함한다. 기판에는복수의나노구조물이형성되고, 나노구조물들을커버하도록제1 도전형반도체층이형성되고, 제1 도전형반도체층상에진성반도체층이형성되며, 진성반도체층상에제2 도전형반도체층이형성된다. 제1 전극은제2 도전형반도체층상에형성된다.
Abstract translation: 太阳能电池包括衬底，第一导电类型半导体层，本征半导体层，第二导电类型半导体层，第一电极和第二电极。 设置有多个纳米结构的衬底上形成，并且形成在第一导电型半导体层，以覆盖所述纳米结构，被形成在第一导电类型半导体层上的本征半导体层，本征半导体层上的第二导电型半导体层 它形成。 第一电极形成在第二导电类型半导体层上。
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Patent Agency Ranking
公开(公告)号：KR1020110127518A
公开(公告)日：2011-11-25
申请号：KR1020100047053
申请日：2010-05-19
Applicant: 연세대학교 산학협력단
IPC: H01L31/042
CPC classification number: Y02E10/50 , H01L31/042
Abstract: PURPOSE: A solar cell is provided to improve the electrical and optical characteristics of a conductive layer and a nanostructure by forming a nanostructure and then processing the nanostructure by plasma. CONSTITUTION: A solar cell comprises a substrate, a first conductive semiconductor layer, an intrinsic semiconductor layer(60), a second conductive semiconductor layer, a first electrode(80), and a second electrode. A plurality of nanostructures(40) is formed in the substrate. The first conductive semiconductor layer covers up the nanostructures. The intrinsic semiconductor layer is formed on the first conductive semiconductor layer. The second conductive semiconductor layer is formed on the intrinsic semiconductor layer. The first electrode is formed on the second conductive semiconductor layer.
Abstract translation: 目的：提供一种太阳能电池，以通过形成纳米结构，然后通过等离子体处理纳米结构来改善导电层和纳米结构的电学和光学特性。 构成：太阳能电池包括衬底，第一导电半导体层，本征半导体层（60），第二导电半导体层，第一电极（80）和第二电极。 在衬底中形成多个纳米结构（40）。 第一导电半导体层覆盖纳米结构。 本征半导体层形成在第一导电半导体层上。 第二导电半导体层形成在本征半导体层上。 第一电极形成在第二导电半导体层上。
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公开(公告)号：KR1020130063366A
公开(公告)日：2013-06-14
申请号：KR1020110129847
申请日：2011-12-06
Applicant: 연세대학교 산학협력단
IPC: G01N27/407 , B82B3/00 , B82Y40/00
Abstract: PURPOSE: A method for forming a porous zinc oxide thin film and a gas sensor manufacturing method thereof are provided to increase the surface area of the zinc oxide thin film and to improve the sensitivity of the gas sensor. CONSTITUTION: A gas sensor manufacturing method is as follows: a step of forming a zinc oxide nano wire on a substrate(S100); a step of forming a porous structure on the zinc oxide nano wire by contacting the zinc oxide nano wire to water(S200); and a step of forming an electrode on the zinc oxide nano wire(S300). [Reference numerals] (AA) Start; (BB) End; (S100) Form a zinc oxide nano wire on a substrate; (S200) Form a porous structure by contact with water; (S300) Form an electrode
Abstract translation: 目的：提供一种形成多孔氧化锌薄膜的方法及其气体传感器的制造方法，以增加氧化锌薄膜的表面积并提高气体传感器的灵敏度。 构成：气体传感器的制造方法如下：在基板上形成氧化锌纳米线的工序（S100）; 通过使氧化锌纳米线与水接触而在氧化锌纳米线上形成多孔结构的步骤（S200）; 以及在氧化锌纳米线上形成电极的步骤（S300）。 （附图标记）（AA）开始; （BB）结束; （S100）在基板上形成氧化锌纳米线; （S200）通过与水接触形成多孔结构体; （S300）形成电极
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公开(公告)号：KR101351551B1
公开(公告)日：2014-01-16
申请号：KR1020110129847
申请日：2011-12-06
Applicant: 연세대학교 산학협력단
IPC: G01N27/407 , B82B3/00 , B82Y40/00
Abstract: 본 발명의 일 실시예에 따른 가스 센서 제조방법은 기판 위에 산화아연 나노 와이어를 형성하는 단계, 상기 산화아연 나노 와이어를 물과 접촉시켜 상기 산화아연 나노와이어에 다공성 구조를 형성하는 단계, 그리고 상기 산화아연 나노 와이어 위에 전극을 형성하는 단계를 포함한다.
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公开(公告)号：KR1020130005150A
公开(公告)日：2013-01-15
申请号：KR1020110066555
申请日：2011-07-05
Applicant: 연세대학교 산학협력단
IPC: H01L21/205
Abstract: PURPOSE: A method for fabricating a carbon thin film and a method for fabricating a semiconductor memory device are provided to deposit a carbon thin film in a low temperature and to reduce fabrication costs. CONSTITUTION: Halocarbon is supplied to a reaction space(S101). The excess of halocarbon is removed(S102). Hydrogen or hydrogen plasma is supplied to the reaction space(S103). The reactant of hydrogen or halogen atom is removed(S104). [Reference numerals] (AA) Start; (BB) Terminating a first cycle; (S101) Supplying halocarbon to a reaction space; (S102) Removing excess of halocarbon; (S103) Supplying hydrogen or hydrogen plasma; (S104) Removing reactant of hydrogen or halogen atom
Abstract translation: 目的：提供一种制造碳薄膜的方法和半导体存储器件的制造方法，以将低碳薄膜沉积并降低制造成本。 构成：向反应空间供应卤代烃（S101）。 除去过量的卤代烃（S102）。 向反应空间供给氢或氢等离子体（S103）。 除去氢或卤素原子的反应物（S104）。 （附图标记）（AA）开始; （BB）终止第一个循环; （S101）向反应空间供给卤化碳; （S102）除去过量的卤化碳; （S103）供给氢或氢等离子体; （S104）除去氢或卤素原子的反应物
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公开(公告)号：KR1020120128873A
公开(公告)日：2012-11-28
申请号：KR1020110046789
申请日：2011-05-18
Applicant: 연세대학교 산학협력단
CPC classification number: H01L31/035227 , H01L31/0296 , H01L31/1828
Abstract: PURPOSE: A photo detecting device and a making method thereof are provided to improve optical absorption by depositing a ZnO thin film of second conductivity type on a ZnO nanowire of first conductivity type. CONSTITUTION: A ZnO nanowire of first conductivity type is formed on a substrate(10). Diethyl zinc as zinc source is supplied on the ZnO nanowire of first conductivity type. Ammonia solution as nitrogen source is supplied. The concentration of ammonia solution is 10 to 15%. The ZnO thin film of second conductivity type is formed on the ZnO nanowire of first conductivity type. An electrode(60) is formed on the ZnO thin film of second conductivity type. [Reference numerals] (AA) N-ZnO nano wire
Abstract translation: 目的：提供一种光检测装置及其制造方法，以通过在第一导电类型的ZnO纳米线上沉积第二导电类型的ZnO薄膜来改善光吸收。 构成：在衬底（10）上形成第一导电类型的ZnO纳米线。 作为锌源的二乙基锌被提供在第一导电类型的ZnO纳米线上。 提供氨溶液作为氮源。 氨溶液浓度为10〜15％。 在第一导电类型的ZnO纳米线上形成第二导电类型的ZnO薄膜。 在第二导电类型的ZnO薄膜上形成电极（60）。 （AA）N-ZnO纳米线
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