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公开(公告)号：KR101477052B1
公开(公告)日：2014-12-31
申请号：KR1020140041312
申请日：2014-04-07
Applicant: 연세대학교 산학협력단
CPC classification number: H03K3/354 , H03K3/011 , H03K3/0315
Abstract: The present invention relates to a ring oscillator, a process variation sensing apparatus, and a semiconductor chip including the same. According to an embodiment of the present invention, the ring oscillator includes an inverter of a single transistor type which includes a pull-up transistor and a pull-down transistor consisting of a PMOS or an NMOS.
Abstract translation: 本发明涉及环形振荡器，工艺变化检测装置和包括该振荡器的半导体芯片。 根据本发明的实施例，环形振荡器包括单晶体管类型的反相器，其包括上拉晶体管和由PMOS或NMOS组成的下拉晶体管。
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公开(公告)号：KR102022547B1
公开(公告)日：2019-09-18
申请号：KR1020150094562
申请日：2015-07-02
Applicant: 에스케이하이닉스 주식회사 , 연세대학교 산학협력단
IPC: G01R19/165 , G01R31/00 , G01R31/26
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公开(公告)号：KR1020170004340A
公开(公告)日：2017-01-11
申请号：KR1020150094562
申请日：2015-07-02
Applicant: 에스케이하이닉스 주식회사 , 연세대학교 산학협력단
IPC: G01R19/165 , G01R31/00 , G01R31/26
CPC classification number: G01R31/2621 , G01R31/06
Abstract: 본기술에의한문턱전압측정장치는모스트랜지스터, 모스트랜지스터의드레인전압을고정하는드레인전압고정부; 모스트랜지스터에드레인-소스전류를인가하는정전류공급부를포함한다.
Abstract translation: 阈值电压测量装置可以包括金属氧化物半导体（MOS）晶体管，漏极电压钳位电路，被配置为控制MOS晶体管的漏极电压，其中漏极电压具有基本上恒定的电平，以及恒定电流供应电路配置 以使漏源电流流过MOS晶体管，其中漏 - 源电流具有基本恒定的量级。
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Patent Agency Ranking
公开(公告)号：KR1020130087693A
公开(公告)日：2013-08-07
申请号：KR1020120008737
申请日：2012-01-30
Applicant: 에스케이하이닉스 주식회사 , 연세대학교 산학협력단
IPC: H01L21/66
Abstract: PURPOSE: A process variation sensor and a semiconductor device including the same are provided to improve the yield of the semiconductor device by sensing the influence of a process variation regardless of a temperature and a power voltage and accurately compensating the operation of the semiconductor device. CONSTITUTION: A first oscillator (1100) and a second oscillator include first transistors with different channel widths or lengths respectively. A second oscillator and a fourth oscillator include the first transistors with the different channel widths or lengths respectively. A first comparator (1200) and a second comparator are composed of XOR gates. An encoder (1300) generates a digital code from the outputs of the first comparator and the second comparator. The digital code shows characteristics due to a process variation regardless of a temperature and a power voltage. [Reference numerals] (1100) First oscillator; (1200) First comparator; (1300) Encoder; (AA) Second oscillator; (BB) Third oscillator; (CC) Fourth oscillator; (DD) Second comparator
Abstract translation: 目的：提供一种工艺变化传感器和包括该工艺变化传感器的半导体器件，用于通过感测处理变化的影响来提高半导体器件的产量，而不管温度和功率电压如何，并准确地补偿半导体器件的工作。 构成：第一振荡器（1100）和第二振荡器分别包括具有不同信道宽度或长度的第一晶体管。 第二振荡器和第四振荡器分别包括具有不同信道宽度或长度的第一晶体管。 第一比较器（1200）和第二比较器由XOR门组成。 编码器（1300）从第一比较器和第二比较器的输出产生数字代码。 数字代码显示了由于过程变化而导致的特性，无论温度和功率电压如何。 （附图标记）（1100）第一振荡器; （1200）第一比较器; （1300）编码器; （AA）第二振荡器; （BB）第三振荡器; （CC）第四振荡器; （DD）第二比较器
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公开(公告)号：KR101912033B1
公开(公告)日：2018-10-25
申请号：KR1020170019346
申请日：2017-02-13
Applicant: 연세대학교 산학협력단
Abstract: 본발명은 FPGA 기반의온도센싱장치및 센싱방법에관한것으로서, 일실시예에따른온도센싱장치는외부클록(CLK)으로부터분주된외부클록주파수(T)를생성하는주파수분주부, 링오실레이터(R-OSC)를이용해서기준온도(T)에대응하는기준클록주파수(T)을출력하는발진부, 및상기생성된외부클록주파수(T)와상기출력된기준클록주파수(T)를대비하여기준값(PW)를생성하고, 상기생성된기준값(PW)에기초하여상기링 오실레이터(R-OSC)의오프셋을보정하는제어부를포함할수 있다.
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公开(公告)号：KR101836502B1
公开(公告)日：2018-03-08
申请号：KR1020120008737
申请日：2012-01-30
Applicant: 에스케이하이닉스 주식회사 , 연세대학교 산학협력단
IPC: H01L21/66
Abstract: 반도체제조공정의변화에의한트랜지스터의특성변화를감지하는공정변화감지장치와이를포함하는반도체장치를개시한다.본발명의넓은형태중 하나는각각채널의폭 또는길이가상이한제 1 트랜지스터를포함하는제 1 오실레이터및 제 2 오실레이터, 각각채널의폭 또는길이가상이한제 1 트랜지스터를포함하는제 3 오실레이터및 제 4 오실레이터, 제 1 오실레이터및 제 2 오실레이터에서출력된신호들의주기차이에대응하는값을제 3 오실레이터및 제 4 오실레이터에서출력된신호들의주기차이에대응하는값으로나눈값에대응하는값을출력하는인코더를포함하는공정변화감지장치에관한것이다.본발명의넓은형태중 다른하나는위와같은공정변화장치를그 내부에포함하는반도체장치에관한것이다.
Abstract translation: 本发明的广泛方面之一是一种半导体器件，其包括具有不同宽度或长度的沟道的第一晶体管， 第三振荡器和所述第四振荡器，所述第一振荡器和对应于从所述第二振荡器1输出的信号的周期差的值分别包括振荡器和第二振荡器，所述通道的宽度或长度从第一晶体管根据权利要求不同 并且输出对应于由与从第三振荡器和第四振荡器输出的信号的周期差相对应的值所除的值相对应的值。在本发明的另一方面中， 并且其中包括工艺变化装置的半导体器件。
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公开(公告)号：KR1020180093365A
公开(公告)日：2018-08-22
申请号：KR1020170019346
申请日：2017-02-13
Applicant: 연세대학교 산학협력단
CPC classification number: G01K7/01 , G01K15/005 , H03K3/00
Abstract: 본발명은 FPGA 기반의온도센싱장치및 센싱방법에관한것으로서, 일실시예에따른온도센싱장치는외부클록(CLK)으로부터분주된외부클록주파수(T)를생성하는주파수분주부, 링오실레이터(R-OSC)를이용해서기준온도(T)에대응하는기준클록주파수(T)을출력하는발진부, 및상기생성된외부클록주파수(T)와상기출력된기준클록주파수(T)를대비하여기준값(PW)를생성하고, 상기생성된기준값(PW)에기초하여상기링 오실레이터(R-OSC)의오프셋을보정하는제어부를포함할수 있다.
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公开(公告)号：KR101418045B1
公开(公告)日：2014-07-14
申请号：KR1020130006034
申请日：2013-01-18
Applicant: 연세대학교 산학협력단
Abstract: The present invention relates to a temperature detection circuit and a temperature detection method. The temperature detection circuit comprises: a delay part delaying an input clock signal to generate a feedback clock signal, and having logic gates for varying a delay time by temperatures; a delay control part comparing the feedback clock signal with a reference clock signal, and controlling the logic gates of the delay part according to the compared results; and an input signal control part for selecting one input clock signal among the feedback clock signal and the reference clock signal based on the circulation cycle number of the input clock signal, and inputting the selected input clock signal in the delay part.
Abstract translation: 本发明涉及温度检测电路和温度检测方法。 温度检测电路包括：延迟部，延迟输入时钟信号以产生反馈时钟信号，并具有用于根据温度改变延迟时间的逻辑门; 延迟控制部分，将反馈时钟信号与参考时钟信号进行比较，并根据比较结果控制延迟部分的逻辑门; 以及输入信号控制部分，用于基于输入时钟信号的循环周期数，在反馈时钟信号和参考时钟信号中选择一个输入时钟信号，并在延迟部分中输入所选择的输入时钟信号。
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