公开(公告)号：KR1020100018751A

公开(公告)日：2010-02-18

申请号：KR1020080077402

申请日：2008-08-07

Applicant: 연세대학교 산학협력단

Inventor： 손현철 ,  김용탑 ,  고대홍 ,  허민영

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L21/28273 ,  H01L21/0226 ,  H01L21/28291 ,  H01L29/66825

Abstract: PURPOSE: A method for manufacturing a flash memory device is provided to prevent the formation of an interfacial layer with a wide band-gap by forming a buffer film composed of Al2O3 between a tunnel dielectric film with a stacked structure and a high-k dielectric film. CONSTITUTION: A tunnel dielectric film(102) with a multilayer structure of a first dielectric film(102a), a buffer film(102b) and a high-k dielectric film(102c) is formed on a semiconductor substrate(100). A second dielectric film(104), a blocking film(106) and a conductive film(108) is formed on the tunnel dielectric film. A gate(112) is formed by etching the conductive film, the blocking film, the second dielectric film and the turner dielectric film. A Thermal process is performed after formation of the first dielectric film. The buffer layer is made of Al2O3. The first dielectric film is formed by a thermal oxidation process or a radical oxidation process.

Abstract translation: 目的：提供一种制造闪速存储器件的方法，通过在具有层叠结构的隧道电介质膜和高k电介质膜之间形成由Al 2 O 3组成的缓冲膜来防止形成具有宽带隙的界面层 。 构成：在半导体衬底（100）上形成具有第一电介质膜（102a），缓冲膜（102b）和高k电介质膜（102c）的多层结构的隧道电介质膜（102）。 在隧道电介质膜上形成第二电介质膜（104），阻挡膜（106）和导电膜（108）。 通过蚀刻导电膜，阻挡膜，第二电介质膜和转鼓介电膜来形成栅极（112）。 在形成第一电介质膜之后进行热处理。 缓冲层由Al2O3制成。 第一电介质膜通过热氧化法或自由基氧化法形成。

公开(公告)号：KR1020100018748A

公开(公告)日：2010-02-18

申请号：KR1020080077396

申请日：2008-08-07

Applicant: 연세대학교 산학협력단

Inventor： 손현철 ,  김용탑 ,  고대홍 ,  허민영

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/66825 ,  H01L21/02142 ,  H01L21/0226 ,  H01L21/67063 ,  H01L29/42324

Abstract: PURPOSE: A method for manufacturing a flash memory device is provided to improve a retention property which a stored charge is released through tunnel dielectric film by forming a dual-structure tunnel dielectric film with a SiO2 film and a high-k dielectric film. CONSTITUTION: A dual-structure tunnel dielectric film(102) composed of a first dielectric film(102a) and a high-k dielectric film(102b) is formed on a semiconductor substrate(100). A second dielectric film(104), a blocking film(106) and a conductive film(108) are formed on the tunnel dielectric film. A gate(112) is formed by etching the conductive film, the blocking film, and the second dielectric film. The first dielectric film is formed with the thickness of 10Å to 40Å by using SiO2. The first dielectric film is formed by a thermal oxidation process or a radical oxidation process.

Abstract translation: 目的：提供一种用于制造闪速存储器件的方法，以通过形成具有SiO 2膜和高k电介质膜的双结构隧道电介质膜来改善通过隧道电介质膜释放储存电荷的保持性质。 构成：在半导体衬底（100）上形成由第一电介质膜（102a）和高k电介质膜（102b）组成的双结构隧道电介质膜（102）。 在隧道电介质膜上形成第二电介质膜（104），阻挡膜（106）和导电膜（108）。 通过蚀刻导电膜，阻挡膜和第二电介质膜形成栅极（112）。 通过使用SiO 2，形成厚度为10埃至40埃的第一介电膜。 第一电介质膜通过热氧化法或自由基氧化法形成。