公开(公告)号：KR101405334B1

公开(公告)日：2014-06-11

申请号：KR1020130109872

申请日：2013-09-12

Applicant: 유비머트리얼즈주식회사

Inventor： 정승원

IPC: C09K3/14 ,  B24D3/00

CPC classification number: C09G1/02 ,  C01F17/0043 ,  C01P2004/40 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/22 ,  C09K3/1409 ,  C09K3/1445 ,  C09K3/1463

Abstract: The present invention provides a method of manufacturing abrasive particles and polishing slurry whereby a plurality of sub-particles are formed on surfaces of base particles and the abrasive particles are mixed with an abrasion accelerating agent and a pH control agent. The method of manufacturing abrasive particles includes a base particle formation step and a sub-particle formation step. In the base particle formation step, a first precursor material solution and a diluted alkali solution are mixed and then heated to produce the base particles having polyhedral crystal planes. In the sub-particle formation step, a plurality of the sub-particles that extrude from the surfaces of the base particles to the outside are formed.

Abstract translation: 本发明提供一种制造磨粒和抛光浆料的方法，由此在基础颗粒的表面上形成多个亚颗粒，并将研磨颗粒与磨耗促进剂和pH控制剂混合。 制造磨料颗粒的方法包括基体颗粒形成步骤和亚颗粒形成步骤。 在基础颗粒形成步骤中，将第一前体材料溶液和稀释的碱溶液混合，然后加热以产生具有多面体晶面的基础颗粒。 在亚颗粒形成步骤中，形成从基体颗粒的表面向外侧挤出的多个亚微粒。

公开(公告)号：KR101409889B1

公开(公告)日：2014-06-19

申请号：KR1020130165582

申请日：2013-12-27

Applicant: 유비머트리얼즈주식회사

Inventor： 정승원

IPC: C09K3/14 ,  H01L21/304

CPC classification number: C09G1/02 ,  C09K3/1454 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/304 ,  H01L21/3212

Abstract: The present invention relates to a polishing slurry for tungsten and a method for polishing a substrate using the same. The polishing slurry includes an abrasive having positive zeta-potential and includes a potential regulator which promotes oxidation of tungsten and regulates the zeta-potential of the abrasive. The potential regulator includes at least one from a group constituted by ferrous ammonium sulfate, tri-oxalato tocheol (III) potassium, acid ferric sodium, potassium ferricyanide, iron acetylacetonate, iron ammonium citrate, and iron ammonium oxalate.

Abstract translation: 本发明涉及一种用于钨的抛光浆料以及使用该抛光浆料的抛光方法。 抛光浆料包括具有正ζ电位的研磨剂，并且包括促进钨的氧化并调节研磨剂的ζ电位的电位调节器。 电位调节剂包括由硫酸亚铁铵，三草酸钾（III）钾，酸性铁钠，铁氰化钾，乙酰丙酮铁，柠檬酸铁铵和草酸铁铵组成的组中的至少一种。

公开(公告)号：KR101405333B1

公开(公告)日：2014-06-11

申请号：KR1020130109871

申请日：2013-09-12

Applicant: 유비머트리얼즈주식회사

Inventor： 정승원

IPC: C09K3/14 ,  B24D3/00 ,  H01L21/304

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1436 ,  H01L21/31053 ,  H01L27/115

Abstract: The present invention relates to abrasive particles, abrasive slurry, and a method for manufacturing a semiconductor device, wherein the abrasive particles include a plurality of secondary particles formed on the surface of base particles, the abrasive slurry is prepared by mixing the abrasive particles with a polishing accelerator and a pH adjusting agent, and the method polishes an insulating film using the abrasive slurry to expose a conductive film.

Abstract translation: 本发明涉及磨料颗粒，磨料浆料和半导体装置的制造方法，其中磨料颗粒包括形成在基础颗粒表面上的多个二次颗粒，磨料浆料是通过将磨料颗粒与 抛光促进剂和pH调节剂，并且该方法使用研磨浆料抛光绝缘膜以暴露导电膜。