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公开(公告)号：KR101389017B1
公开(公告)日：2014-04-28
申请号：KR1020120113536
申请日：2012-10-12
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/0749 , H01L31/042 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 기판 상에 용액 방식으로 CIGS 박막 형성하는 단계; 상기 단계에서 형성된 CIGS 박막을 용액 방식으로 셀렌화하는 단계; 및 비활성기체 분위기 챔버에서 열처리하는 단계를 포함하는 CIGS 광흡수층 제조 방법을 제공한다.
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公开(公告)号：KR1020140047762A
公开(公告)日：2014-04-23
申请号：KR1020120113536
申请日：2012-10-12
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/0749 , H01L31/042 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0749 , H01L31/042 , H01L31/18
Abstract: The present invention relates to a method of manufacturing a CIGS light absorbing layer. According to one embodiment of the present invention, the method of manufacturing a CIGS light absorbing layer includes a step of forming a CIGS thin film; a selenization step; and a thermal treatment step. According to one embodiment of the present invention, the CIGS thin film is formed on a substrate by using a selenium precursor solution. [Reference numerals] (AA) Start; (BB) End; (S10) Forming a CIGS thin film on a substrate in a solution method; (S20) Selenizing the CIGS thin film in the solution method; (S30) Thermal treatment in a nitrogen atmosphere chamber
Abstract translation: 本发明涉及一种制造CIGS光吸收层的方法。 根据本发明的一个实施例，制造CIGS光吸收层的方法包括形成CIGS薄膜的步骤; 硒化步骤 和热处理步骤。 根据本发明的一个实施方案，通过使用硒前体溶液在基底上形成CIGS薄膜。 （附图标记）（AA）开始; （BB）结束; （S10）溶液法在基板上形成CIGS薄膜; （S20）溶液法对CIGS薄膜进行硒化处理; （S30）氮气氛下的热处理
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