公开(公告)号：KR100973989B1

公开(公告)日：2010-08-05

申请号：KR1020080010968

申请日：2008-02-04

Applicant: 재단법인서울대학교산학협력재단

Inventor： 서광석 ,  김형태

IPC: H03K19/20

Abstract: 본 발명은 논인버트 기능 회로와 인버트 기능 회로의 설계가 간단한 모바일 기반 논리 회로에 대한 것으로서 저항과 제 1 공명 터널링 다이오드의 직렬연결로 이루어진 입력부 및 제 2 공명 터널링 다이오드와 제 3 공명 터널링 다이오드가 직렬 연결된 출력부를 포함하고, 상기 출력부의 출력 노드에 상기 입력부가 연결되며, 상기 저항은 상기 입력부로의 '하이(High)' 입력 전압에 대한 VI특성 곡선에서 상기 저항의 특성 곡선이 상기 제 1 공명 터널링 다이오드의 특성 곡선과 하나의 접점만을 가지도록 하는 저항값을 가지는 것을 특징으로 한다.
모바일, 논리 회로, 공명 터널링 다이오드

公开(公告)号：KR1020090085194A

公开(公告)日：2009-08-07

申请号：KR1020080010968

申请日：2008-02-04

Applicant: 재단법인서울대학교산학협력재단

Inventor： 서광석 ,  김형태

IPC: H03K19/20

CPC classification number: H03K19/10 ,  H03K19/0963

Abstract: A mobile based logic circuit is provided to implant an invert logic circuit or non-invert logic circuit using the same logic circuit by properly selecting a peak current difference of resonant tunneling diodes of an output unit and a resistance value of an input resistor. A mobile based logic circuit is comprised of an input unit(310) and an output unit(320). The input unit includes a resistance and a first resonant tunneling diode. The input unit is connected to an output node of the output unit. The output unit includes a second resonant tunneling diode and a third resonant tunneling diode connected in series. In a V-I characteristic curve for a high input voltage to the input unit, a characteristic curve of a resistance has one contact with the characteristic curve of the first resonant tunneling diode.

Abstract translation: 提供基于移动的逻辑电路，通过适当选择输出单元的谐振隧穿二极管的峰值电流差和输入电阻的电阻值，使用相同的逻辑电路来注入反转逻辑电路或非反相逻辑电路。 基于移动的逻辑电路包括输入单元（310）和输出单元（320）。 输入单元包括电阻和第一谐振隧道二极管。 输入单元连接到输出单元的输出节点。 输出单元包括串联连接的第二谐振隧道二极管和第三谐振隧道二极管。 在对输入单元的高输入电压的V-I特性曲线中，电阻的特性曲线与第一谐振隧穿二极管的特性曲线一次接触。

公开(公告)号：KR100642211B1

公开(公告)日：2006-11-02

申请号：KR1020050118027

申请日：2005-12-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김형태 ,  서광석

IPC: H03K3/356

Abstract: A MOBILE(Monostable to Bistable transition Logic Element)-based delayed flip-flop circuit with NRZ(Non Return to Zero)-mode output is provided to reduce power consumption of a system by reducing complexity of a conventional NRZ circuit. In a MOBILE-based delayed flip-flop circuit with NRZ-mode output, a first high mobility transistor receives a data signal as a control signal. A first resonant tunneling diode is parallel connected to the first high mobility transistor. A second high mobility transistor receives a clock signal as the control signal and one side thereof is connected to one side of the first high mobility transistor. A second resonance tunneling diode is connected in series between the other side of the second high mobility transistor and a ground side.

Abstract translation: 提供具有NRZ（非归零）模式输出的移动（单稳态到双稳态转换逻辑元件）延迟触发器电路，通过降低传统NRZ电路的复杂性来降低系统的功耗。 在具有NRZ模式输出的基于MOBILE的延迟触发器电路中，第一高迁移率晶体管接收数据信号作为控制信号。 第一谐振隧穿二极管并联连接到第一高迁移率晶体管。 第二高迁移率晶体管接收时钟信号作为控制信号，并且其一侧连接到第一高迁移率晶体管的一侧。 第二谐振隧穿二极管串联连接在第二高迁移率晶体管的另一侧和接地侧之间。

公开(公告)号：KR100832923B1

公开(公告)日：2008-06-02

申请号：KR1020070067426

申请日：2007-07-05

Applicant: 재단법인서울대학교산학협력재단

Inventor： 서광석 ,  김형태

IPC: H01L29/88

CPC classification number: H01L27/0788 ,  H01L29/882

Abstract: A literal gate using a resonant tunneling diode is provided to miniaturize a circuit size and to simply a manufacturing process. A literal gate using a resonant tunneling diode includes an input terminal(310) and an output terminal(320). An output of the input terminal is used as an input value of the output terminal. The literal gate determines an output value according to the input value. The input terminal includes a resistor and a resonant tunneling diode(RTD), which are connected to each other in series. The output terminal includes a plurality of resonant tunneling diodes(RTDA,RTDB), which determine the output value by using a clock signal as a control signal. The plurality of resonant tunneling diodes are connected to each other in parallel.

Abstract translation: 提供了使用谐振隧道二极管的文字门以使电路尺寸小型化和简单地制造工艺。 使用谐振隧道二极管的文字门包括输入端（310）和输出端（320）。 输入端子的输出用作输出端子的输入值。 文字门根据输入值确定输出值。 输入端子包括串联连接的电阻器和谐振隧道二极管（RTD）。 输出端子包括通过使用时钟信号作为控制信号来确定输出值的多个谐振隧道二极管（RTDA，RTDB）。 多个谐振隧道二极管并联连接。

公开(公告)号：KR100877079B1

公开(公告)日：2009-01-07

申请号：KR1020070081013

申请日：2007-08-13

Applicant: 재단법인서울대학교산학협력재단

Inventor： 서광석 ,  김형태

IPC: H03K17/74 ,  H03K17/04

CPC classification number: H01L27/0788 ,  H01L29/882 ,  H03K17/58

Abstract: The universal literal gate utilizing the resonant tunneling diode is provided to reduce the number of active circuit element by using only the input-output property of the RTDs and to enhance the manufacture yield. The universal literal gate outputting a plurality of literal windows comprises the input terminal(810) and output terminal(820). The input terminal of the universal literal gate comprises a plurality of the RTD(RTDA,RTDB,RTDC,RTDD). The output terminal of the universal literal gate outputs a plurality of literal windows. A plurality of RTDs has the at least two peak current values. The input terminal of the universal literal gate comprises the resistance which is serially connected. The input terminal of the universal literal gate comprises two RTDs(RTDC,RTDD). The input voltage(VIN) node is connected to one side of the input resistance(RIN). The other side of the input resistance(RIN) is serially connected to one side of RTDC. One side of the RTD(RTDD) is serially connected to the other side of the RTC(RTDC). The input value of the output is input value of the output terminal and the output of the input terminal is outputted to the other side of RTDD. The output of the input terminal is connected to the output voltage(VOUT) node of the output terminal. A plurality of RTDs is serially connected.

Abstract translation: 提供利用谐振隧道二极管的通用文字门，通过仅使用RTD的输入输出特性来减少有源电路元件的数量，并提高制造产量。 输出多个文字窗口的通用文字门包括输入端（810）和输出端（820）。 通用文字门的输入端包括多个RTD（RTDA，RTDB，RTDC，RTDD）。 通用文字门的输出端输出多个文字窗口。 多个RTD具有至少两个峰值电流值。 通用文字门的输入端包括串联的电阻。 通用文字门的输入端包括两个RTD（RTDC，RTDD）。 输入电压（VIN）节点连接到输入电阻（RIN）的一侧。 输入电阻（RIN）的另一侧串联连接到RTDC的一侧。 RTD（RTDD）的一侧与RTC（RTDC）的另一侧串联连接。 输出的输入值为输出端子的输入值，输入端子的输出输出到RTDD的另一侧。 输入端子的输出端连接到输出端子的输出电压（VOUT）节点。 多个RTD串联连接。