公开(公告)号：KR100834114B1

公开(公告)日：2008-06-02

申请号：KR1020070025553

申请日：2007-03-15

Applicant: 재단법인서울대학교산학협력재단

Inventor： 유권국 ,  유상임 ,  문승현

IPC: H01B12/00 ,  H01B13/00

CPC classification number: Y02E40/64

Abstract: An IBAD(Ion Beam Assisted Deposition) system for fabricating a metal wire having a biaxial-alignment property is provided to control a deposition region of a metal substrate moving at high speed in continuous deposition on the long metal substrate. An IBAD system(10) for fabricating a superconducting wire includes a transfer unit(400), a heating member(500), a deposition member(100), an ion injection member(200), and a control member(700). The transfer unit includes a first reel member(422a) and a second reel member(422b) for multi-turn of a metal wire on a deposition region(42) to continuously deposit a biaxial-alignment thin film on the metal wire. The heating member heats the multi-turned metal wire. The deposition member deposits material on the metal wire passing through the deposition region. The ion injection member irradiates ion-beams to the thin film deposited on the metal wire. The control member controls the deposition region.

Abstract translation: 提供了用于制造具有双轴取向性的金属线的IBAD（离子束辅助沉积）系统，以控制在长金属基板上的连续沉积中高速移动的金属基板的沉积区域。 用于制造超导线材的IBAD系统（10）包括转印单元（400），加热构件（500），沉积构件（100），离子注入构件（200）和控制构件（700）。 转印单元包括用于在沉积区域（42）上多次旋转金属丝的第一卷轴构件（422a）和第二卷轴构件（422b），以在金属丝上连续沉积双轴取向薄膜。 加热构件加热多转金属线。 沉积构件将材料沉积在穿过沉积区域的金属线上。 离子注入构件将离子束照射到沉积在金属线上的薄膜。 控制构件控制沉积区域。