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公开(公告)号：KR100466157B1
公开(公告)日：2005-01-14
申请号：KR1020010072796
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: A single/multi cantilever probe and a method for manufacturing the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by integrating MOSFET channels with a front end of a cantilever arm. CONSTITUTION: A cantilever probe includes a p-type single crystal silicon-on-insulator substrate having a single crystal bulk type first silicon layer(1). A first insulation layer and a second silicon layer are sequentially deposited on the single crystal bulk type first silicon layer(1). A second insulation layer is formed on the p-type single crystal silicon-on-insulator substrate. At least one source electrode pad(17a) and at least one drain electrode pad(17b) are formed on the second insulation layer. At least one cantilever arm(7) extends in a rod shape from the second silicon layer. First and second connecting wires(17c,17d), which are connected to the source electrode pad(17a) and the drain electrode pad(17b), are formed at both sides of the cantilever arm(7). At least one FET channel(11) is provided.
Abstract translation: 目的：通过将MOSFET通道与悬臂的前端集成，提供单/多悬臂探针及其制造方法，以高速，高精度和高分辨率存储和读取电荷。 构成：悬臂探针包括具有单晶体块型第一硅层（1）的p型单晶硅绝缘体上硅衬底。 在单晶体型第一硅层（1）上顺序沉积第一绝缘层和第二硅层。 在p型单晶绝缘体上硅衬底上形成第二绝缘层。 在第二绝缘层上形成至少一个源电极焊盘（17a）和至少一个漏电极焊盘（17b）。 至少一个悬臂（7）从第二硅层延伸成杆状。 在悬臂（7）的两侧形成有连接到源电极焊盘（17a）和漏电极焊盘（17b）的第一和第二连接线（17c，17d）。 提供至少一个FET通道（11）。
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公开(公告)号：KR100466158B1
公开(公告)日：2005-01-14
申请号：KR1020010072797
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: An FET-tip type single/multi cantilever probe and a method for fabricating the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by installing a tip in an FET channel formed on a front end of a cantilever arm. CONSTITUTION: A single FET-tip cantilever probe(100) includes a p-type single crystal silicon-on-insulator substrate(101). A silicon oxide layer(201) and an upper silicon layer(102) are sequentially deposited on the p-type single crystal silicon-on-insulator substrate(101). A cantilever arm(408) is formed by patterning the upper silicon layer(102) extending from a probe body(108) of the single FET-tip cantilever probe(100). A p-type tip(406) is formed in a front end of the cantilever arm(408). The p-type tip(406) is positioned at a center of a channel forming area(503), thereby forming an FET channel having n++-pn++ type structure.
Abstract translation: 目的：提供一种FET尖端型单/多悬臂梁探针及其制造方法，以通过将尖端安装在形成于第一层上的FET沟道中来高速，高精度和高分辨率地存储和读取电荷 悬臂的前端。 结构：单个FET尖端悬臂探针（100）包括p型单晶硅绝缘体上硅衬底（101）。 在p型单晶绝缘体上硅衬底（101）上依次淀积氧化硅层（201）和上硅层（102）。 通过图案化从单个FET尖端悬臂探针（100）的探针主体（108）延伸的上硅层（102）形成悬臂（408）。 p型尖端（406）形成在悬臂（408）的前端。 p型尖端（406）位于沟道形成区域（503）的中心，由此形成具有n ++ -pn ++型结构的FET沟道。
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公开(公告)号：KR1020030041726A
公开(公告)日：2003-05-27
申请号：KR1020010072797
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: An FET-tip type single/multi cantilever probe and a method for fabricating the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by installing a tip in an FET channel formed on a front end of a cantilever arm. CONSTITUTION: A single FET-tip cantilever probe(100) includes a p-type single crystal silicon-on-insulator substrate(101). A silicon oxide layer(201) and an upper silicon layer(102) are sequentially deposited on the p-type single crystal silicon-on-insulator substrate(101). A cantilever arm(408) is formed by patterning the upper silicon layer(102) extending from a probe body(108) of the single FET-tip cantilever probe(100). A p-type tip(406) is formed in a front end of the cantilever arm(408). The p-type tip(406) is positioned at a center of a channel forming area(503), thereby forming an FET channel having n++-pn++ type structure.
Abstract translation: 目的：提供FET尖端型单/多悬臂探头及其制造方法，以通过在尖端形成的FET通道中安装尖端来存储和读取高速，高精度和高分辨率的电荷 悬臂的前端。 构成：单个FET顶端悬臂探针（100）包括p型单晶硅绝缘体上基板（101）。 氧化硅层（201）和上硅层（102）依次沉积在p型单晶硅绝缘体上基板（101）上。 通过图案化从单个FET顶端悬臂探针（100）的探针体（108）延伸的上硅层（102）形成悬臂（408）。 p型尖端（406）形成在悬臂（408）的前端。 p型端头（406）位于沟道形成区域（503）的中心，从而形成具有n ++ -pn ++型结构的FET沟道。
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公开(公告)号：KR1020030041725A
公开(公告)日：2003-05-27
申请号：KR1020010072796
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: A single/multi cantilever probe and a method for manufacturing the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by integrating MOSFET channels with a front end of a cantilever arm. CONSTITUTION: A cantilever probe includes a p-type single crystal silicon-on-insulator substrate having a single crystal bulk type first silicon layer(1). A first insulation layer and a second silicon layer are sequentially deposited on the single crystal bulk type first silicon layer(1). A second insulation layer is formed on the p-type single crystal silicon-on-insulator substrate. At least one source electrode pad(17a) and at least one drain electrode pad(17b) are formed on the second insulation layer. At least one cantilever arm(7) extends in a rod shape from the second silicon layer. First and second connecting wires(17c,17d), which are connected to the source electrode pad(17a) and the drain electrode pad(17b), are formed at both sides of the cantilever arm(7). At least one FET channel(11) is provided.
Abstract translation: 目的：提供单/多悬臂探头及其制造方法，通过将MOSFET通道与悬臂的前端集成在一起，以高速，高精度和高分辨率存储和读取电荷。 构成：悬臂探头包括具有单晶体体型第一硅层（1）的p型单晶硅绝缘体上基板。 第一绝缘层和第二硅层依次沉积在单晶体体型第一硅层（1）上。 在p型单晶硅绝缘体上形成第二绝缘层。 在第二绝缘层上形成至少一个源电极焊盘（17a）和至少一个漏电极焊盘（17b）。 至少一个悬臂（7）从第二硅层以杆状延伸。 在悬臂（7）的两侧形成有连接到源电极焊盘（17a）和漏电极焊盘（17b）的第一和第二连接线（17c，17d）。 至少提供一个FET通道（11）。
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