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公开(公告)号：KR100466159B1
公开(公告)日：2005-01-14
申请号：KR1020010072798
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L29/772 , B82Y30/00 , B82Y10/00
CPC classification number: B82Y10/00
Abstract: PURPOSE: A method for varying band gap of carbon nanotube, nano quantum device using the same and method of producing the same are provided to form the nano quantum device having one or more quantum dots by inserting one ore more carbon fullerene including metallofullerene or carbon fullerene into the carbon nano tube. CONSTITUTION: A nano quantum device(10) is formed with a linear nano tube(1) and one or more spherical molecules(3a-3f). The spherical molecules(3a-3f) are inserted into the linear nano tube(1) in order to generate locally the elastic modification and modifies locally a band gap of an inserted position. The linear nano tube(1) is formed with one of a carbon nano tube and a nano tube of boron nitride and CxByNz. The spherical molecules(3a-3f) are formed with carbon fullerene including metallofullerene or carbon fullerene. The carbon fullerene including metallofullerene is formed with carbon fullerene including Gd.
Abstract translation: 目的：提供一种改变碳纳米管带隙的方法，使用该方法的纳米量子器件及其制备方法，以通过插入一个或多个碳富勒烯（包括金属富勒烯或碳富勒烯）形成具有一个或多个量子点的纳米量子器件 进入碳纳米管。 构成：纳米量子器件（10）由线性纳米管（1）和一个或多个球形分子（3a-3f）形成。 将球形分子（3a-3f）插入线性纳米管（1）中以便局部地产生弹性修饰并局部修改插入位置的带隙。 线性纳米管（1）由碳纳米管和氮化硼和CxByNz纳米管中的一种形成。 球形分子（3a-3f）由包含金属富勒烯或碳富勒烯的碳富勒烯形成。 包含金属富勒烯的碳富勒烯由包含Gd的碳富勒烯形成。
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公开(公告)号：KR1020040092608A
公开(公告)日：2004-11-04
申请号：KR1020030026101
申请日：2003-04-24
Applicant: 재단법인서울대학교산학협력재단
IPC: G02B21/00
Abstract: PURPOSE: An atomic force microscope head is provided to remove errors due to movement of mirror or a gradient of a sample and provide the scanning without non-linearity by dividing one directional scanner to two different directional scanners. CONSTITUTION: A laser source(12) is used for generating laser beams. A prism is used for refracting the laser beams. A cantilever(14) includes a needle and reflects the light. One or more mirror(15) are used for reflecting the light reflected from the cantilever. A detector(16) is used for measuring an angle of the reflected light of the mirror. A laser control bar(11) is used for controlling a convergent position of the cantilever. A mirror control bar(13) is used for controlling a position of the mirror. A scanner is used for correcting a variation of the cantilever.
Abstract translation: 目的：提供原子力显微镜头以消除由于镜子的移动或样品的梯度引起的错误，并且通过将一个定向扫描器分成两个不同的定向扫描器来提供无非线性的扫描。 构成：激光源（12）用于产生激光束。 棱镜用于折射激光束。 悬臂（14）包括针并反射光。 一个或多个反射镜（15）用于反射从悬臂反射的光。 检测器（16）用于测量反射镜的反射光的角度。 激光控制杆（11）用于控制悬臂的收敛位置。 镜子控制杆（13）用于控制镜子的位置。 扫描器用于校正悬臂的变化。
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公开(公告)号：KR1020090022086A
公开(公告)日：2009-03-04
申请号：KR1020070087146
申请日：2007-08-29
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: B82B3/00
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L21/02538 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02568 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L31/035281 , H01L33/08 , H01L33/20 , Y10S977/70 , Y10S977/762 , Y10S977/84
Abstract: A regioselectively lateral nanowire growth process is provided to improve integration degree of device by selecting desired location when nano device is manufactured and growing nanowire. A regioselectively lateral nanowire growth process comprises steps of: forming the first oxide silicon thin film on a silicon substrate; forming two or more long grooves; removing the remaining first oxide silicon thin film; forming a silicon core surrounded by the second oxide silicon thin film(3); etching perpendicularly a predetermined part of both sides of a silicon core surrounded by the second silicon thin film by patterning and removing it; forming a hollow channel of which the both sides are opened; depositing a catalyst metal layer on one end of the hollow channel; forming a protective film on a top surface of the catalyst metal layer; and growing nanowire in the hollow channel from the catalyst metal layer(7) to the silicon substrate in horizontal direction.
Abstract translation: 提供区域选择性横向纳米线生长工艺，以通过在纳米器件制造和生长纳米线时选择所需位置来提高器件的集成度。 区域选择性横向纳米线生长方法包括以下步骤：在硅衬底上形成第一氧化硅薄膜; 形成两个或多个长槽; 去除剩余的第一氧化硅薄膜; 形成由所述第二氧化硅薄膜（3）包围的硅芯; 通过图案化和除去由第二硅薄膜包围的硅芯的两侧的预定部分垂直蚀刻; 形成两侧打开的中空通道; 在所述中空通道的一端上沉积催化剂金属层; 在催化剂金属层的顶表面上形成保护膜; 并在中空通道中从水平方向从催化剂金属层（7）到硅衬底生长纳米线。
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公开(公告)号：KR100466157B1
公开(公告)日：2005-01-14
申请号：KR1020010072796
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: A single/multi cantilever probe and a method for manufacturing the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by integrating MOSFET channels with a front end of a cantilever arm. CONSTITUTION: A cantilever probe includes a p-type single crystal silicon-on-insulator substrate having a single crystal bulk type first silicon layer(1). A first insulation layer and a second silicon layer are sequentially deposited on the single crystal bulk type first silicon layer(1). A second insulation layer is formed on the p-type single crystal silicon-on-insulator substrate. At least one source electrode pad(17a) and at least one drain electrode pad(17b) are formed on the second insulation layer. At least one cantilever arm(7) extends in a rod shape from the second silicon layer. First and second connecting wires(17c,17d), which are connected to the source electrode pad(17a) and the drain electrode pad(17b), are formed at both sides of the cantilever arm(7). At least one FET channel(11) is provided.
Abstract translation: 目的：通过将MOSFET通道与悬臂的前端集成，提供单/多悬臂探针及其制造方法，以高速，高精度和高分辨率存储和读取电荷。 构成：悬臂探针包括具有单晶体块型第一硅层（1）的p型单晶硅绝缘体上硅衬底。 在单晶体型第一硅层（1）上顺序沉积第一绝缘层和第二硅层。 在p型单晶绝缘体上硅衬底上形成第二绝缘层。 在第二绝缘层上形成至少一个源电极焊盘（17a）和至少一个漏电极焊盘（17b）。 至少一个悬臂（7）从第二硅层延伸成杆状。 在悬臂（7）的两侧形成有连接到源电极焊盘（17a）和漏电极焊盘（17b）的第一和第二连接线（17c，17d）。 提供至少一个FET通道（11）。
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公开(公告)号：KR1020030041727A
公开(公告)日：2003-05-27
申请号：KR1020010072798
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L29/772 , B82Y30/00 , B82Y10/00
CPC classification number: B82Y10/00
Abstract: PURPOSE: A method for varying band gap of carbon nanotube, nano quantum device using the same and method of producing the same are provided to form the nano quantum device having one or more quantum dots by inserting one ore more carbon fullerene including metallofullerene or carbon fullerene into the carbon nano tube. CONSTITUTION: A nano quantum device(10) is formed with a linear nano tube(1) and one or more spherical molecules(3a-3f). The spherical molecules(3a-3f) are inserted into the linear nano tube(1) in order to generate locally the elastic modification and modifies locally a band gap of an inserted position. The linear nano tube(1) is formed with one of a carbon nano tube and a nano tube of boron nitride and CxByNz. The spherical molecules(3a-3f) are formed with carbon fullerene including metallofullerene or carbon fullerene. The carbon fullerene including metallofullerene is formed with carbon fullerene including Gd.
Abstract translation: 目的：提供用于改变碳纳米管带隙的方法，使用其的纳米量子器件及其制造方法，以通过插入一个或多个碳富勒烯（包括金属富勒烯或碳富勒烯）形成具有一个或多个量子点的纳米量子器件 进入碳纳米管。 构成：纳米量子器件（10）形成有线性纳米管（1）和一个或多个球形分子（3a-3f）。 将球形分子（3a-3f）插入到线性纳米管（1）中，以便局部地产生弹性变形，并且局部地修改插入位置的带隙。 线性纳米管（1）由碳纳米管和氮化硼纳米管和CxByNz之一形成。 球形分子（3a-3f）由包含金属富勒烯或碳富勒烯的碳富勒烯形成。 包括金属富勒烯的碳富勒烯由包含Gd的碳富勒烯形成。
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Patent Agency Ranking6.发明授权
公开(公告)号：KR100810983B1
公开(公告)日：2008-03-10
申请号：KR1020060042465
申请日：2006-05-11
Applicant: 재단법인서울대학교산학협력재단
Abstract: 본 발명은 실리콘 단결정 기판 위에 위치 선택적으로 또는 규칙적으로 배열된 실리콘 또는 화합물 반도체 단결정 나노선을 수직 방향으로 성장시키는 방법, 및 이러한 나노선을 포함하여 이루어지는 실리콘 또는 화합물반도체 동축 수직형 전계효과트랜지스터나 발광-수광 소자와 같은 전자 나노 소자 및 이의 제조 방법에 관한 것이다.
상술한 목적을 달성하기 위한 본 발명에 따른 나노선 성장 방법은, 실리콘 기판 위의 원하는 위치에 구덩이를 패터닝하는 단계; 상기 구덩이의 바닥에 금속을 증착하는 단계; 상기 실리콘 기판 위에 소정 두께의 알루미늄 막을 증착하는 단계; 상기 알루미늄 막을 양극산화시킴으로써 상기 원하는 위치에 상기 금속이 노출되도록 원통형 구멍이 형성된 알루미늄 산화막을 형성하는 단계; 및 상기 원통형 구멍을 통해 수직형 나노선을 성장시키는 단계를 포함하여 이루어지는 것을 특징으로 한다.
수직형 반도체 나노선, 동축형 전계트랜지스터, 자가조립 성장, 다공성 알루미늄 산화막 마스크-
公开(公告)号：KR100496457B1
公开(公告)日：2005-06-23
申请号：KR1020030026101
申请日：2003-04-24
Applicant: 재단법인서울대학교산학협력재단
IPC: G02B21/00
Abstract: 본 발명은 SPM(Scanning Probe Microscope)장치의 레이저와 PSPD(position sensitive photodiode detector)사이의 정렬에 관한 장치의 구조 및 방법에 관한 것으로서, 시편 표면의 기울기에 따라 PSPD 신호의 기준값이 변하는 현상을 없앰으로써 높은 분해능을 가능하게 하는 장비의 구조적인 방법에 관한 것이다.
이를 위해 본 발명은 기존의 레이저 반사거울의 기하학적인 배치 및 방법을 기존의 방법(고정거울1개, 움직거울1개)과는 다르게 변형하여 2개의 거울이 동시에 움직이면서 평행상태를 유지시키는 구조로 변경함으로써, PSPD에 조정되어진 신호의 기준값이 시편의 모양이나 기울어진 정도와는 무관하게 유지되는 것을 특징으로 한다.-
公开(公告)号：KR1020030041726A
公开(公告)日：2003-05-27
申请号：KR1020010072797
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: An FET-tip type single/multi cantilever probe and a method for fabricating the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by installing a tip in an FET channel formed on a front end of a cantilever arm. CONSTITUTION: A single FET-tip cantilever probe(100) includes a p-type single crystal silicon-on-insulator substrate(101). A silicon oxide layer(201) and an upper silicon layer(102) are sequentially deposited on the p-type single crystal silicon-on-insulator substrate(101). A cantilever arm(408) is formed by patterning the upper silicon layer(102) extending from a probe body(108) of the single FET-tip cantilever probe(100). A p-type tip(406) is formed in a front end of the cantilever arm(408). The p-type tip(406) is positioned at a center of a channel forming area(503), thereby forming an FET channel having n++-pn++ type structure.
Abstract translation: 目的：提供FET尖端型单/多悬臂探头及其制造方法，以通过在尖端形成的FET通道中安装尖端来存储和读取高速，高精度和高分辨率的电荷 悬臂的前端。 构成：单个FET顶端悬臂探针（100）包括p型单晶硅绝缘体上基板（101）。 氧化硅层（201）和上硅层（102）依次沉积在p型单晶硅绝缘体上基板（101）上。 通过图案化从单个FET顶端悬臂探针（100）的探针体（108）延伸的上硅层（102）形成悬臂（408）。 p型尖端（406）形成在悬臂（408）的前端。 p型端头（406）位于沟道形成区域（503）的中心，从而形成具有n ++ -pn ++型结构的FET沟道。
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公开(公告)号：KR1020030041725A
公开(公告)日：2003-05-27
申请号：KR1020010072796
申请日：2001-11-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: A single/multi cantilever probe and a method for manufacturing the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by integrating MOSFET channels with a front end of a cantilever arm. CONSTITUTION: A cantilever probe includes a p-type single crystal silicon-on-insulator substrate having a single crystal bulk type first silicon layer(1). A first insulation layer and a second silicon layer are sequentially deposited on the single crystal bulk type first silicon layer(1). A second insulation layer is formed on the p-type single crystal silicon-on-insulator substrate. At least one source electrode pad(17a) and at least one drain electrode pad(17b) are formed on the second insulation layer. At least one cantilever arm(7) extends in a rod shape from the second silicon layer. First and second connecting wires(17c,17d), which are connected to the source electrode pad(17a) and the drain electrode pad(17b), are formed at both sides of the cantilever arm(7). At least one FET channel(11) is provided.
Abstract translation: 目的：提供单/多悬臂探头及其制造方法，通过将MOSFET通道与悬臂的前端集成在一起，以高速，高精度和高分辨率存储和读取电荷。 构成：悬臂探头包括具有单晶体体型第一硅层（1）的p型单晶硅绝缘体上基板。 第一绝缘层和第二硅层依次沉积在单晶体体型第一硅层（1）上。 在p型单晶硅绝缘体上形成第二绝缘层。 在第二绝缘层上形成至少一个源电极焊盘（17a）和至少一个漏电极焊盘（17b）。 至少一个悬臂（7）从第二硅层以杆状延伸。 在悬臂（7）的两侧形成有连接到源电极焊盘（17a）和漏电极焊盘（17b）的第一和第二连接线（17c，17d）。 至少提供一个FET通道（11）。
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公开(公告)号：KR101345456B1
公开(公告)日：2013-12-27
申请号：KR1020070087146
申请日：2007-08-29
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: B82B3/00
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L21/02538 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02568 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L31/035281 , H01L33/08 , H01L33/20 , Y10S977/70 , Y10S977/762 , Y10S977/84
Abstract: 본발명은위치선택적수평형나노와이어의성장방법, 그에의해형성된나노와이어및 이를포함하는나노소자에관한것으로, 더욱상세하게는소자제작시 원하는위치를선택하여기판과수평방향으로일정한길이와직경을갖는나노와이어를성장시킴으로써, 소자의집적도를향상시킬수 있는위치선택적수평형나노와이어의성장방법, 그에의해형성된나노와이어및 이를포함하는나노소자에관한것이다.
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