公开(公告)号：KR100430813B1

公开(公告)日：2004-05-10

申请号：KR1020010049937

申请日：2001-08-20

Applicant: 재단법인서울대학교산학협력재단

Inventor： 윤의준 ,  윤석호 ,  황희돈

IPC: H01L21/20

Abstract: PURPOSE: A two-step growth interruption process for control of semiconductor quantum dot is provided to control a solid shape of a quantum dot by performing two growth interruption processes. CONSTITUTION: A chemical compound semiconductor buffer layer(110) is grown on a semiconductor substrate(100). A quantum dot crystallization layer is formed on the chemical compound semiconductor buffer layer(110). The grating constant of quantum dot crystallization layer is larger than that of the chemical compound semiconductor buffer layer(110). A quantum dot(320) of a solid shape is formed on the quantum dot crystallization layer by performing the first growth interruption process. The solid shape of the quantum dot(320) is controlled by performing the second growth interruption process. A cover layer(330) is grown on the quantum dot(320). The grating constant of the cover layer(330) is smaller than that of the quantum dot crystallization layer.

Abstract translation: 目的：通过执行两个生长中断过程来提供用于控制半导体量子点的两步生长中断过程以控制量子点的固体形状。 构成：化学化合物半导体缓冲层（110）生长在半导体衬底（100）上。 量子点结晶层形成在化合物半导体缓冲层（110）上。 量子点结晶层的光栅常数大于化合物半导体缓冲层（110）的光栅常数。 通过执行第一生长中断过程在量子点结晶层上形成固体形状的量子点（320）。 通过执行第二生长中断过程来控制量子点（320）的固体形状。 在量子点（320）上生长覆盖层（330）。 覆盖层（330）的光栅常数小于量子点结晶层的光栅常数。

公开(公告)号：KR1020030016034A

公开(公告)日：2003-02-26

申请号：KR1020010049937

申请日：2001-08-20

Applicant: 재단법인서울대학교산학협력재단

Inventor： 윤의준 ,  윤석호 ,  황희돈

IPC: H01L21/20

Abstract: PURPOSE: A two-step growth interruption process for control of semiconductor quantum dot is provided to control a solid shape of a quantum dot by performing two growth interruption processes. CONSTITUTION: A chemical compound semiconductor buffer layer(110) is grown on a semiconductor substrate(100). A quantum dot crystallization layer is formed on the chemical compound semiconductor buffer layer(110). The grating constant of quantum dot crystallization layer is larger than that of the chemical compound semiconductor buffer layer(110). A quantum dot(320) of a solid shape is formed on the quantum dot crystallization layer by performing the first growth interruption process. The solid shape of the quantum dot(320) is controlled by performing the second growth interruption process. A cover layer(330) is grown on the quantum dot(320). The grating constant of the cover layer(330) is smaller than that of the quantum dot crystallization layer.

Abstract translation: 目的：提供用于控制半导体量子点的两步增长中断过程，以通过执行两个生长中断处理来控制量子点的实心形状。 构成：在半导体基板（100）上生长化学化合物半导体缓冲层（110）。 在化合物半导体缓冲层（110）上形成量子点结晶层。 量子点结晶层的光栅常数大于化合物半导体缓冲层（110）的光栅常数。 通过进行第一生长中断处理，在量子点结晶层上形成实心形状的量子点（320）。 通过执行第二增长中断处理来控制量子点（320）的实心形状。 在量子点（320）上生长覆盖层（330）。 覆盖层（330）的光栅常数小于量子点结晶层的光栅常数。