Abstract:
A polymer solar battery and a method for manufacturing the same are provided to obtain high power transformation efficiency even in a low temperature thermal treatment. A polymer solar battery includes a first electrode(20), a hole injection layer(30), an optical active layer(40), an electron activating layer(60), and a second electrode(50). The first electrode includes a substrate and a conductive layer located on the substrate. The hole injection layer is located on the first electrode. The optical active layer is located on the hole injection layer. The electron accommodating layer is located on the optical active layer. The electron accommodating layer consists of PCBM([6,6]-phenyl-C61, butyric acid methyl ester).
Abstract:
본 발명은 기판, 제1전극, 정공주입층, 광활성층, 제2전극을 포함하는 고분자 태양전지에 있어서, 상기 광활성층과 제2전극 사이에 전자수용층을 포함하는 것을 특징으로 하는 고분자 태양전지 및 그 제조방법에 관한 것이다. 본 발명은 광활성층과 제2전극 사이에 전자 수용층을 포함함으로써, 전력변환 효율이 우수하고 저온 열처리 공정에서도 높은 전력변환 효율을 얻을 수 있는 고분자 태양전지 및 그 제조방법을 제공한다. 고분자 태양전지, 정공주입층, 전자수용층, PCBM 박막층,
Abstract:
PURPOSE: A high functional organic semiconductor compound based on 2,7-bis-(vinyl)[1]benzothieno[3,2-b]benzothiophene is provided to ensure high on/off ratio and filed-effect mobilities. CONSTITUTION: An organic semiconductor compound of chemical formulas 3 to 9 is synthesized by reacting phosphonate of chemical formula 1 with aldehyde derivative of chemical formula 2. In chemical formulas 1 and 2, A is cyclic alkyl group, phenyl group, phenyl group substituted with C1-C12 alkyl group, thiophenyl group, thiophenyl group substituted with C1-C12 alkyl, naphthyl group, naphthyl group substituted with C1-C12 alkyl, non-phenyl group, non-phenyl group substituted with C1-C12 alkyl, anthracenyl group, anthracenyl group substituted with C1-C12 alkyl, phenanthrenyl group, or phenanthrenyl group substituted with C1-C12 alkyl group. An electric element comprises the organic semiconductor thin film of chemical formulas 3 to 9.
Abstract:
A photosensitive organic thin film transistor is provided to decrease an on-state current of a transistor according to light intensity by forming an activation layer in two layers. A photosensitive organic thin film transistor includes a substrate(100), a gate electrode(200), a gate insulation material(300), an n-type organic semiconductor film(410), a p-type organic semiconductor film(420), and source and drain electrodes(500,600). The gate electrode is formed on a predetermined region on the substrate. The gate insulation material is formed on the gate electrode. The n-type organic semiconductor film is formed on the gate insulation material. The p-type organic semiconductor film is formed on the n-type organic semiconductor film. The source and drain electrodes are formed on the p-type organic semiconductor film.
Abstract:
PURPOSE: A fabrication method of an organic solar cell to align a molecular structure by adding hydrocarbon is provided to improve the light conversion efficiency by increasing the thickness of the photoelectric transformation layer. CONSTITUTION: A fabrication method of an organic solar cell to align a molecular structure by adding hydrocarbon includes a photoelectric transformation layer in which the hole-receptor and the electron-receptor are mixed between a cathode and an anode faced each other. The arrangement of a molecule is induced when the coating process is performed by adding the hydrocarbon to the coating solution for forming the photoelectric transformation layer.
Abstract:
PURPOSE: A transparent organic solar cells is provided to manufacture organic layer solar battery regardless of the incidence direction of the light by using a transparency organic layer solar battery. CONSTITUTION: The transparent organic solar cells comprise the bottom electrode formed in the insulation substrate and the light-emitting layer formed on the bottom electrode. The bottom electrode includes the upper electrode formed on the organic layer(3). The multilayer includes the at least semi-transparent metal. The semi-transparent metal of the upper electrode is made of Al, and Ag and Al / Ag.
Abstract:
PURPOSE: A non-volatile semiconductor memory controller for processing one request first before completing another request, a memory system having the same and a method thereof are provided to accelerate reading and writing speed of a flash memory while reducing response time for a host by processing another request before completing the in-process operation in a flash memory system. CONSTITUTION: A flash memory(200) stores user data and meta data. A first memory(120) loads the meta data. A second memory(130) stores and duplicates the meta data. A flash memory controller(150) duplicates the meta data saved in the first memory to the second memory in case of a first type operation requiring the change of meta data. The flash memory controller stores the changed meta data as described above in the first memory.
Abstract:
PURPOSE: A carbazole compound and organic electro luminescence device using the same are provided to easily perform wet and dry coating and to ensure optical and electrical stability. CONSTITUTION: A carbazole compound is denoted by chemical formula 1. An organic electro luminescence device comprises a first electrode, second electrode, and organic compound layer between the first and second electrodes. The organic compound layer contains the carbazole compound. The layer containing carbazole comound is a light emitting layer, hole transport layer, or hole injection layer.
Abstract:
PURPOSE: A semiconductor device and an address mapping method thereof are provided to efficiently allocate storage space between dissimilar log types by changing a log block to one log block according to a log type. CONSTITUTION: A log type decision part(110) selects one among a first log type and a second log type which are dissimilar type according to the request of a processor of a semiconductor device. A first type log part(120) receives and writes a logical address for programming to a flash memory and program data to corresponding block when a control signal is selected to a first log type. A second type log part(130) receives and writes a logical address for programming to a flash memory and program data when a control signal is selected to a second log type. A merge part(140) changes a log block which is included in a log part among a first type log part and a second type log part to the log block of a different log part in response to the conversion request included in a control signal.