公开(公告)号：KR1020030046859A

公开(公告)日：2003-06-18

申请号：KR1020010077142

申请日：2001-12-06

Applicant: 전북대학교산학협력단

Inventor： 임연호 ,  강형곤 ,  한병성 ,  한윤봉

IPC: H01L39/24

Abstract: PURPOSE: A micro patterning and device manufacturing method of an Y-Ba-Cu-O superconductor using plasma are provided to improve the characteristics of a transistor by manufacturing an SFFT(Superconducting Flux Flow Transistor). CONSTITUTION: After coating photoresist on the Y-Ba-Cu-O superconducting thin film, the photoresist is exposed and etched by using the first mask. A control current line and a bias current line are patterned by a dry etching process using plasma. An exposing and etching process are carried out for forming a link pattern on the bias current line of the Y-Ba-Cu-O superconducting thin film. Then, the link pattern is formed by a dry etching process using plasma. An SFFT device is completed by forming a metal electrode on the resultant structure.

Abstract translation: 目的：提供使用等离子体的Y-Ba-Cu-O超导体的微图案化和器件制造方法，以通过制造SFFT（超导磁通流量晶体管）来改善晶体管的特性。 构成：在Y-Ba-Cu-O超导薄膜上涂覆光致抗蚀剂后，通过使用第一掩模曝光和蚀刻光致抗蚀剂。 通过使用等离子体的干蚀刻工艺对控制电流线和偏置电流线进行构图。 进行曝光和蚀刻处理以在Y-Ba-Cu-O超导薄膜的偏置电流线上形成连接图案。 然后，通过使用等离子体的干蚀刻工艺形成连接图案。 通过在所得结构上形成金属电极来完成SFFT装置。