公开(公告)号：KR1020040095062A

公开(公告)日：2004-11-12

申请号：KR1020030028659

申请日：2003-05-06

Applicant: 전자부품연구원

Inventor： 박준식 ,  박광범 ,  박효덕 ,  윤대원 ,  나경환 ,  이낙규 ,  강성군

IPC: H01L41/22

Abstract: PURPOSE: A sample, an apparatus, and a method for measuring a piezoelectric transverse coefficient of a PZT piezoelectric layer are provided to measure accurately the piezoelectric transverse coefficient and obtain comparative data about various piezoelectric materials by providing an improved structure of the sample. CONSTITUTION: A sample for measuring a piezoelectric transverse coefficient of a PZT piezoelectric layer includes a lower electrode deposited on a substrate, a piezoelectric layer having a lower electrode opening formed on the lower electrode, and an upper electrode(60) and a fixing part formed on the piezoelectric layer. The upper electrode is formed on the fixing part without using a connection part.

Abstract translation: 目的：提供用于测量PZT压电层的压电横向系数的样品，装置和方法，以通过提供改进的样品结构来精确地测量压电横向系数并获得关于各种压电材料的比较数据。 构成：用于测量PZT压电层的压电横向系数的样本包括沉积在基底上的下电极，形成在下电极上的具有下电极开口的压电层，以及形成的上电极（60）和固定部 在压电层上。 上部电极形成在固定部分上，而不使用连接部分。