公开(公告)号：KR100781953B1

公开(公告)日：2007-12-06

申请号：KR1020060138994

申请日：2006-12-29

Applicant: 전자부품연구원

Inventor： 김영훈 ,  김원근 ,  한정인 ,  이용욱

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: An organic thin film transistor and its manufacturing method are provided to improve the impurity blocking characteristic of the organic thin film transistor by using a first protective layer formed on a gate dielectric. A gate electrode(120) is formed on an upper portion of a substrate(100). A gate dielectric(130) is formed to surround the gate electrode. A drain electrode(141) and a source electrode(144) are separately formed on an upper portion of the gate dielectric. A data electrode(147) is formed on the upper portion of the gate dielectric by being electrically connected to the drain electrode. An organic semiconductor layer(150) is formed on a mutually separated region of the upper portion of the gate dielectric as it surrounds parts of the drain and the source electrodes. The organic semiconductor layer is extended from the part formed on the mutually separated region to surround the part of the data electrode. A first protective layer(160) is formed on the upper portion of the gate dielectric as it surrounds the drain electrode, the source electrode, the data electrode, and the organic semiconductor layer. A part of the first protective layer is removed so that the organic semiconductor layer formed by surrounding the date electrode is exposed. A second protective layer(170) is formed on an upper portion of the first protective layer and an upper portion of the exposed organic semiconductor layer.

Abstract translation: 提供有机薄膜晶体管及其制造方法，通过使用形成在栅极电介质上的第一保护层来改善有机薄膜晶体管的杂质阻挡特性。 栅电极（120）形成在基板（100）的上部。 栅极电介质（130）形成为围绕栅电极。 漏电极（141）和源电极（144）分别形成在栅极电介质的上部。 数据电极（147）通过电连接到漏极电极而形成在栅极电介质的上部。 在栅极电介质的上部的相互分离的区域上形成有机半导体层（150），因为其包围漏极和源电极的一部分。 有机半导体层从形成在相互分离的区域上的部分延伸以包围数据电极的一部分。 第一保护层160围绕着漏电极，源电极，数据电极和有机半导体层，形成在栅介质的上部。 去除第一保护层的一部分，使得通过围绕日期电极形成的有机半导体层被暴露。 在第一保护层的上部和暴露的有机半导体层的上部形成第二保护层（170）。

公开(公告)号：KR100822270B1

公开(公告)日：2008-04-16

申请号：KR1020060130796

申请日：2006-12-20

Applicant: 전자부품연구원

Inventor： 김영훈 ,  김원근 ,  한정인 ,  이용욱

IPC: H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/458 ,  H01L29/78678

Abstract: A thin film transistor and a manufacturing method thereof are provided to improve an electrical characteristic by reducing contact resistance between a semiconductor layer and a second source electrode. A gate electrode(110) is formed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to enclose the gate electrode. A first source electrode(131) and a first drain electrode(141) are formed on the gate insulating layer. A second source electrode(135) is formed on the first source electrode, and has a first extension(137) floated from the gate insulating layer. A second drain electrode(145) is formed on the first drain electrode, and has a second extension(147) floated from the gate insulating layer. A semiconductor layer(150) is formed on the gate insulating layer in the region where the first and second source electrodes are spaced apart from the first and second drain electrodes.

Abstract translation: 提供一种薄膜晶体管及其制造方法，以通过降低半导体层和第二源电极之间的接触电阻来改善电特性。 在基板（100）上形成栅电极（110），在基板上形成栅极绝缘层（120）以包围栅电极。 第一源电极（131）和第一漏电极（141）形成在栅极绝缘层上。 第二源电极（135）形成在第一源极上，并且具有从栅极绝缘层浮起的第一延伸部（137）。 在第一漏电极上形成第二漏电极（145），并且具有从栅极绝缘层浮起的第二延伸部（147）。 在第一和第二源极与第一和第二漏极间隔开的区域中，在栅极绝缘层上形成半导体层（150）。