公开(公告)号：KR101521450B1

公开(公告)日：2015-05-21

申请号：KR1020130009267

申请日：2013-01-28

Applicant: 조선대학교산학협력단

Inventor： 김남훈 ,  오성하 ,  이우선

IPC: H01L31/0749 ,  H01L31/032 ,  H01L31/18 ,  C23C14/34

CPC classification number: Y02E10/50 ,  Y02P70/521

Abstract: 본발명은 CuSe2를타겟으로하는비셀렌화스퍼터링공정을이용한 CIGS 박막제조방법에관한것으로서, CuSe2 타켓으로스퍼터링증착을수행하여 CIGS 박막을제조하기위한방법을제공함에그 목적이있다. 이러한목적을달성하기위한본 발명은, (a) 기판에마련된 CuSe2 타겟에프리스퍼터링수행하는단계; (b) RF 마그네트론스퍼터링수행하는단계; 및 (c) Ga/In/CuSe다층스택구조를생성하기위하여, 인듐(In) 및갈륨(Ga) 타겟을 RF 스퍼터링을수행하여 CuSe2 박막위에증착하는단계; 를포함한다.

公开(公告)号：KR1020140097645A

公开(公告)日：2014-08-07

申请号：KR1020130009267

申请日：2013-01-28

Applicant: 조선대학교산학협력단

Inventor： 김남훈 ,  오성하 ,  이우선

IPC: H01L31/0749 ,  H01L31/032 ,  H01L31/18 ,  C23C14/34

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/0749 ,  C23C14/34 ,  H01L31/032 ,  H01L31/18

Abstract: The present invention relates to a method for manufacturing a CIGS thin film using a non-selenization sputtering process with a CuSe2 target. The purpose of the present invention is to provide a method for manufacturing a CIGS thin film by performing a sputtering deposition process with a CuSe2 target. To achieve the purpose, the present invention includes (a) a step of performing a free sputtering process on a CuSe2 target prepared on a substrate; (b) a step of performing an RF magnetron sputtering process; and (c) a step of depositing an In and Ga target on the CuSe2 thin film by performing an RF sputtering process to generate a Ga/In/CuSe2 multilayer stack structure.

Abstract translation: 本发明涉及使用CuSe 2靶的非硒化溅射法制造CIGS薄膜的方法。 本发明的目的是提供一种通过用CuSe 2靶进行溅射沉积工艺制造CIGS薄膜的方法。 为了实现该目的，本发明包括（a）对在基板上制备的CuSe 2靶进行自由溅射工艺的步骤; （b）执行RF磁控溅射工艺的步骤; 以及（c）通过进行RF溅射工艺以生成Ga / In / CuSe 2多层堆叠结构，在CuSe 2薄膜上沉积In和Ga靶的步骤。