公开(公告)号：KR1020090005739A

公开(公告)日：2009-01-14

申请号：KR1020070069022

申请日：2007-07-10

Applicant: 주성엔지니어링(주)

Inventor： 유경한

IPC: H01L21/205

CPC classification number: H01L21/67098 ,  H01L21/6719 ,  H01L21/67248

Abstract: The air cooling type substrate processing apparatus is provided to perform efficient cool by forming integrally the radiating unit with the chamber lid or the chamber body. The substrate processing apparatus(100) comprises the chamber(110), and the substrate loading unit(120) for a plurality of substrates (s) iand the gas injector(130) spraying the gas to the top of the substrate loading unit. The chamber is comprised of the chamber body(111) and the chamber lid(112) interposing O-ring on the top of the chamber body. In the lower part of the chamber body, the exhaust pipe(116) for ejecting the residual gas and maintaining the vacuum pressure of the chamber is formed. In the substrate settling unit(122), the groove pattern in which the cooling gas like helium etc can flow is formed.

Abstract translation: 空气冷却型基板处理装置设置成通过与辐射单元一体地形成室盖或室主体来实现高效的冷却。 基板处理装置（100）包括室（110）和用于多个基板的基板装载单元（120）和气体注入器（130），其将气体喷射到基板装载单元的顶部。 该室由腔室主体（111）和腔室盖（112）组成，腔室盖（112）将O形环插入腔体的顶部。 在室主体的下部，形成用于喷射残留气体并维持室的真空压力的排气管（116）。 在衬底沉降单元（122）中，形成诸如氦等的冷却气体可以流动的凹槽图案。

公开(公告)号：KR101725765B1

公开(公告)日：2017-04-12

申请号：KR1020100091752

申请日：2010-09-17

Applicant: 주성엔지니어링(주)

Inventor： 강승모 ,  한정훈 ,  유경한 ,  이주호

IPC: H01L21/02 ,  H01L21/768

Abstract: 본발명은산화막증착방법및 이를이용한비아콘택형성방법에관한것으로, 종횡비(종:횡)가 1:3 이상의콘택홀을갖는피증착물을마련하는단계및 상기피증착물의상기콘택홀의내측면에산화막을형성하는단계를포함하되, 상기산화막은 25 내지 200도의온도의챔버내에염소함유실리콘소스와반응물질을공급하여증착하되, 85%이상의스텝커버리지특성과, 150Å/min 이상의증착율을갖는산화막증착방법및 이를이용한비아콘택형성방법을제공한다. 이와같이 200도이하의저온에서기화된액상의염소(Chlorine)가함유된실리콘원료물질과액상의반응물질을이용한화학기상증착법을통해 150Å/min이상의높은증착율과 85%이상의우수한스텝커버리지특성을갖는산화막을증착할수 있다.

公开(公告)号：KR1020110031132A

公开(公告)日：2011-03-24

申请号：KR1020100091752

申请日：2010-09-17

Applicant: 주성엔지니어링(주)

Inventor： 강승모 ,  한정훈 ,  유경한 ,  이주호

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02263 ,  H01L21/02164 ,  H01L21/76802

Abstract: PURPOSE: A method for depositing an oxide layer and a method for forming a via contact using the same are provided to deposit an oxide layer with a uniform thickness in a contact hole with a high aspect ratio through a chemical vapor deposition method using a liquid reaction material and silicon material with liquid chlorine. CONSTITUTION: An object(10) including a contact hole(11) with an aspect ratio of 1:3 or more is prepared. An oxide layer(20) is formed on the inner surface of the contact hole of the object. The oxide layer is deposited by supplying a silicon source with chlorine and reaction materials to a chamber with a temperature of 25 to 200 degrees centigrade. The oxide layer has a step coverage property of 85% or more and a deposition rate of 150 Å/min or more.

Abstract translation: 目的：提供一种用于沉积氧化物层的方法和使用其的形成通孔接触的方法，以通过使用液体反应的化学气相沉积法在高纵横比的接触孔中沉积具有均匀厚度的氧化物层 材料和硅材料与液氯。 构成：准备包括纵横比为1:3以上的接触孔（11）的物体（10）。 在物体的接触孔的内表面上形成氧化物层（20）。 通过将硅源和反应材料供给到温度为25至200摄氏度的室中来沉积氧化物层。 氧化物层的台阶覆盖率为85％以上，析出速度为150 / min以上。

公开(公告)号：KR1020090119370A

公开(公告)日：2009-11-19

申请号：KR1020080045366

申请日：2008-05-16

Applicant: 주성엔지니어링(주)

Inventor： 유경한 ,  이승호 ,  이현호

IPC: H01L21/02

Abstract: PURPOSE: An apparatus for treating a substrate is provided to secure process uniformity in depositing a thin film or etching the thin film by preventing degradation of process gas. CONSTITUTION: An apparatus for treating a substrate is composed of a chamber, a first gas spraying unit, a substrate mounting unit, a second gas spraying unit, and a gas division unit. The chamber(114) provides a reaction space and has an exhaust pipe(142). The first gas spraying unit(122) is installed inside the chamber, and the first gas spraying unit supplies a process gas. The substrate mounting unit(118) is faced with the gas spraying unit and receives the substrate(116). A second gas spraying unit is installed at a lower part of the substrate mounting unit and supplies the purge gas. A gas division unit is installed between the substrate mounting unit and a chamber inner wall and separates the process gas from a purge gas, and then discharges it.

Abstract translation: 目的：提供一种用于处理基板的设备，以确保沉积薄膜的工艺均匀性或通过防止工艺气体的劣化来蚀刻薄膜。 构成：处理基板的装置由室，第一气体喷射单元，基板安装单元，第二气体喷射单元和气体分隔单元构成。 室（114）提供反应空间并具有排气管（142）。 第一气体喷射单元（122）安装在室内，第一气体喷射单元提供处理气体。 基板安装单元（118）面对气体喷射单元并且接收基板（116）。 第二气体喷射单元安装在基板安装单元的下部并供应净化气体。 气体分割单元安装在基板安装单元和室内壁之间，并将处理气体与吹扫气体分离，然后将其排出。

公开(公告)号：KR1020090032196A

公开(公告)日：2009-04-01

申请号：KR1020070097199

申请日：2007-09-27

Applicant: 주성엔지니어링(주)

Inventor： 이태완 ,  이현호 ,  유경한

IPC: H01L27/115 ,  H01L29/78 ,  B82Y10/00

CPC classification number: H01L21/28273 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/42324 ,  H01L29/7881 ,  H01L29/66825

Abstract: A poly silicon film and a method of forming the same, a flash memory device and a manufacturing method using the same are provided to form the poly silicon layer of the thickness which desires by suppressing the grain growth. A semiconductor substrate(110) having the predetermined structure is flowed into a reaction chamber. The poly silicon first layer is formed by the silicon source gas. The grain is formed by growing the already formed nucleus to the nano crystal. The grain boundary is generated between the grains. The poly silicon first layer is formed with the same thickness as the grain size. The inflow of the silicon source gas is previously interrupted before the fusion of grains. The impurity gas is flowed into the reaction chamber. The silicon source gas remaining behind is removed by the fuzzy process. The nitrogen atom, the oxygen atom or the impurity atom including these are contained in the grain boundary by flowing the impurity gas.

Abstract translation: 提供多晶硅薄膜及其制造方法，提供闪存器件及其制造方法，以通过抑制晶粒生长形成欲望的厚度的多晶硅层。 具有预定结构的半导体衬底（110）流入反应室。 多硅第一层由硅源气体形成。 通过将已经形成的核生长成纳米晶体形成晶粒。 颗粒之间产生晶界。 多晶硅第一层形成与晶粒尺寸相同的厚度。 预先在晶粒熔化之前中断硅源气体的流入。 杂质气体流入反应室。 剩余的硅源气体通过模糊过程被去除。 包含这些的氮原子，氧原子或杂质原子通过使杂质气流动而包含在晶界。