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公开(公告)号：KR101166690B1
公开(公告)日：2012-07-19
申请号：KR1020100054238
申请日：2010-06-09
Applicant: 충남대학교산학협력단
Abstract: 본 발명의 일실시예에 따른 강자성층/공간층/반강자성층의 3층 구조에 기반을 둔 고 자장 민감도 평면 홀 효과 센서는, IrMn 및 NiO로 구성된 반강자성(AFM) 층, Cu, Ag, Au, Ru, 및 Ta으로 구성된 공간층(spacer), 및 NiFe 및 NiCo로 구성된 강자성(FM) 층으로 이루어는 것을 특징으로 한다.
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2.发明公开
公开(公告)号：KR1020110134594A
公开(公告)日：2011-12-15
申请号：KR1020100054238
申请日：2010-06-09
Applicant: 충남대학교산학협력단
Abstract: PURPOSE: A high magnetic field sensitivity planar hall effect sensor is provided to enhance magnetic field sensitivity and to reduce exchange coupling by enlarging an active current which passes through a ferromagnetic layer and forming a space layer thinly. CONSTITUTION: A high magnetic field sensitivity planar hall effect sensor is composed of an anti- ferroelectric material layer, a space layer, and a ferromagnetic layer. The ferromagnetic layer is composed of NiFe and NiCo. The space layer is composed of Cu, Ag, Au, Ru, and Ta. The anti- ferroelectric material layer is composed of IrMn and NiO. The high magnetic field sensitivity planar hall effect sensor appropriately has the exchange coupling of an appropriate size. The field sensitivity of the high magnetic field sensitivity planar hall effect sensor is high.
Abstract translation: 目的：提供高磁场灵敏度平面霍尔效应传感器，以增强磁场灵敏度，并通过放大穿过铁磁层并形成空间层的有功电流来减少交换耦合。 构成：高磁感应平面霍尔效应传感器由抗铁电材料层，空间层和铁磁层组成。 铁磁层由NiFe和NiCo组成。 空间层由Cu，Ag，Au，Ru和Ta组成。 抗铁电材料层由IrMn和NiO组成。 高磁场灵敏度平面霍尔效应传感器适当地具有适当尺寸的交换耦合。 高磁场灵敏度平面霍尔效应传感器的场灵敏度高。
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