公开(公告)号：KR1020100135532A

公开(公告)日：2010-12-27

申请号：KR1020090053969

申请日：2009-06-17

Applicant: 포항공과대학교 산학협력단

Inventor： 조문호 ,  이근희 ,  이동훈

IPC: H01L21/205 ,  C23C16/52

CPC classification number: H01L21/02271 ,  C23C16/463 ,  H01L21/02052 ,  H01L21/02532 ,  H01L21/324

Abstract: PURPOSE: A method and an apparatus for low-temperature and high-speed depositing a silicon thin film are provided to obtain the light temperature gradient between a substrate and a chamber by cooling the substrate in a silicon thin film depositing process. CONSTITUTION: A silicon source gas is introduced in a chamber(10). A chamber heating part(12) heats the chamber by being installed in the chamber. A substrate supporting part is mounted in the chamber. The substrate supporting part supports a substrate on which a silicon thin film is deposited. The silicon thin film is deposited on the substrate by heating and thermally decomposing the silicon source gas.

Abstract translation: 目的：提供一种用于低温高速沉积硅薄膜的方法和设备，以通过在硅薄膜沉积工艺中冷却衬底来获得衬底和室之间的光温梯度。 构成：将硅源气体引入室（10）中。 腔室加热部件（12）通过安装在腔室中来加热腔室。 衬底支撑部件安装在腔室中。 基板支撑部分支撑沉积有硅薄膜的基板。 通过加热和热分解硅源气体将硅薄膜沉积在衬底上。

公开(公告)号：KR101073051B1

公开(公告)日：2011-10-12

申请号：KR1020090053969

申请日：2009-06-17

Applicant: 포항공과대학교 산학협력단

Inventor： 조문호 ,  이근희 ,  이동훈

IPC: H01L21/205 ,  C23C16/52

Abstract: 본발명은기판위에실리콘박막을고속으로증착할수 있는실리콘박막증착장치및 이를이용한실리콘박막증착방법에관한것이다. 실리콘박막의증착방법은, 기판을세척하여기판표면의이물질을제거하고, 기판을챔버내부에장착하고, 냉각유체를이용하여기판을냉각시키고, 챔버를가열하여기판과챔버사이에온도구배를형성하고, 챔버내부로실리콘소스가스를주입후 실리콘소스가스를가열및 열분해하여기판위에실리콘박막을증착하는단계들을포함한다.