公开(公告)号：KR1020120083829A

公开(公告)日：2012-07-26

申请号：KR1020110080260

申请日：2011-08-11

Applicant: 한국과학기술연구원

Inventor： 최경진 ,  곽준섭

IPC: H01L33/22 ,  H01L33/38 ,  H01L33/04

CPC classification number: H01L33/22 ,  H01L33/42 ,  H01L33/502 ,  H01L2933/0091

Abstract: PURPOSE: An etching-type resonance energy transfer light emitting diode is provided to increase color reproducibility by using a semiconductor quantum dot as a color converter. CONSTITUTION: An n-GaN layer, active layer, p-GaN layer, and transparent electrode layer(14) are successively grown on a substrate(10). An n-pad is connected to the n-GaN layer. A p-pad is connected to the transparent electrode layer. Micro and nano hole patterns are formed on the transparent electrode layer. The micro and nano hole are formed by etching layers from the p-GaN layer to n-GaN layer.

Abstract translation: 目的：提供一种蚀刻型共振能量转移发光二极管，以通过使用半导体量子点作为颜色转换器来提高颜色再现性。 构成：在衬底（10）上依次生长n-GaN层，有源层，p-GaN层和透明电极层（14）。 n焊盘连接到n-GaN层。 p焊盘连接到透明电极层。 在透明电极层上形成微孔和纳米孔图案。 微孔和纳米孔通过从p-GaN层蚀刻到n-GaN层而形成。