-
公开(公告)号：KR1020120133445A
公开(公告)日：2012-12-11
申请号：KR1020110052080
申请日：2011-05-31
Applicant: 한국과학기술연구원
CPC classification number: G11B5/8404 , G11B5/732 , G11B2220/2516 , H01F10/14 , H01F10/30
Abstract: PURPOSE: A patterned media and a method for manufacturing the same to change magnetic property are provided to a damage of a thin film layer caused by etch loss generated due to an etching process for patterning and to improve magnetic property. CONSTITUTION: A patterned media(100) includes a substrate(10), a seed layer(20) and multiple thin film layers(30). The seed layer is located on the substrate. The seed layer includes CrV. Thin film layers are located on the seed layer. The thin film layers are separated from each other. The thin film layers include FePt.
Abstract translation: 目的：提供图案化介质及其制造方法以改变磁特性，由于由图案化的蚀刻工艺产生的蚀刻损失导致的薄膜层的损伤并提高磁性能。 构图：图案化介质（100）包括基底（10），种子层（20）和多个薄膜层（30）。 种子层位于基底上。 种子层包括CrV。 薄膜层位于种子层上。 薄膜层彼此分离。 薄膜层包括FePt。
-
Patent Agency Ranking
公开(公告)号：KR1020110083219A
公开(公告)日：2011-07-20
申请号：KR1020100003332
申请日：2010-01-14
Applicant: 한국과학기술연구원
CPC classification number: G11B5/738 , G11B5/851 , G11B2220/2516 , H01F10/12
Abstract: PURPOSE: A magnetic thin film member and manufacturing method thereof are provided to prevent magnetic exchange coupling effect between particles of Co/Pd multilayer thin film layer. CONSTITUTION: A magnetic thin film member includes a substrate(10), a intermediate layer(20) locating on the substrate and includes TiN, and a Co/Pd multilayer thin film layer(30) locating on the intermediate layer. The Co/Pd multilayer thin film layer includes a first layer(301) including Co, a second level which is laminated on the first layer and includes Pd. The first layer and the second level are repetitively laminated. The thickness of the second level is thicker than the thickness of the first layer. An amount of TiN is 15-20vol%.
Abstract translation: 目的：提供一种磁性薄膜构件及其制造方法，以防止Co / Pd多层薄膜层的颗粒之间的磁交换耦合效应。 构成：磁性薄膜构件包括基板（10），位于基板上并包括TiN的中间层（20）和位于中间层上的Co / Pd多层薄膜层（30）。 Co / Pd多层薄膜层包括包含Co的第一层（301），层叠在第一层上并包括Pd的第二层。 第一层和第二层重复层压。 第二层的厚度比第一层的厚度厚。 TiN的量为15〜20体积％。
-
-
-
公开(公告)号：KR1020100128882A
公开(公告)日：2010-12-08
申请号：KR1020090047543
申请日：2009-05-29
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A magnetism recording medium including CrV underlayer and a manufacturing method of the same are provided to maximize the FePt L10 crystallization directional intention at lower temperature of than 400°C. CONSTITUTION: A magnetism recording medium including CrV underlayer comprises a substrate(10), a CrV underlying layer(20) and FePt magnetic thin film(40). The substrate is one of a glass substrate, a silicon substrate, a silicon oxide substrate or a magnesium oxide substrate. The CrV underlying layer is located on top of the substrate. The FePt magnetic thin film is located on top of the CrV underlying layer.
Abstract translation: 目的：提供包含CrV底层的磁记录介质及其制造方法，以使在低于400℃的较低温度下的FePt L10结晶定向意图最大化。 构成：包含CrV底层的磁记录介质包括基底（10），CrV下层（20）和FePt磁性薄膜（40）。 基板是玻璃基板，硅基板，氧化硅基板或氧化镁基板之一。 CrV下层位于衬底的顶部。 FePt磁性薄膜位于CrV底层的顶部。
-
公开(公告)号：KR1020100116993A
公开(公告)日：2010-11-02
申请号：KR1020090035710
申请日：2009-04-23
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A magnetic thin film unit and a method for manufacturing the same are provided to be adapted to a thin film for the magnetic recording layer of a high density hard disk by increasing coercive force. CONSTITUTION: A base material is prepared(S10). An intermediate layer is formed on the base material(S20). A magnetic thin film layer is formed on the intermediate layer(S30). The base material with the magnetic thin film is thermally treated(S40). The magnetic thin film is made of FePtSn-based alloy. The intermediate layer contains one or more element selected from a group including MgO, Ag, CrRu, RuAl, and Cr.
Abstract translation: 目的：提供一种磁性薄膜单元及其制造方法，以通过增加矫顽力来适应高密度硬盘的磁记录层的薄膜。 构成：准备基材（S10）。 在基材上形成中间层（S20）。 在中间层上形成磁性薄膜层（S30）。 对具有磁性薄膜的基材进行热处理（S40）。 磁性薄膜由FePtSn基合金制成。 中间层含有一种或多种选自包括MgO，Ag，CrRu，RuAl和Cr的元素。
-
-
-
-
-
Search Results
6
records
(took 0.021 seconds)
