公开(公告)号：KR1020120133445A

公开(公告)日：2012-12-11

申请号：KR1020110052080

申请日：2011-05-31

Applicant: 한국과학기술연구원

Inventor： 천동원 ,  정원용 ,  김성만 ,  이우영 ,  김현수

IPC: G11B5/84 ,  G11B5/66 ,  G11B5/70

CPC classification number: G11B5/8404 ,  G11B5/732 ,  G11B2220/2516 ,  H01F10/14 ,  H01F10/30

Abstract: PURPOSE: A patterned media and a method for manufacturing the same to change magnetic property are provided to a damage of a thin film layer caused by etch loss generated due to an etching process for patterning and to improve magnetic property. CONSTITUTION: A patterned media(100) includes a substrate(10), a seed layer(20) and multiple thin film layers(30). The seed layer is located on the substrate. The seed layer includes CrV. Thin film layers are located on the seed layer. The thin film layers are separated from each other. The thin film layers include FePt.

Abstract translation: 目的：提供图案化介质及其制造方法以改变磁特性，由于由图案化的蚀刻工艺产生的蚀刻损失导致的薄膜层的损伤并提高磁性能。 构图：图案化介质（100）包括基底（10），种子层（20）和多个薄膜层（30）。 种子层位于基底上。 种子层包括CrV。 薄膜层位于种子层上。 薄膜层彼此分离。 薄膜层包括FePt。

公开(公告)号：KR100511077B1

公开(公告)日：2005-08-30

申请号：KR1020030016170

申请日：2003-03-14

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이한주 ,  황웅준 ,  신무환 ,  김영근

IPC: G11C11/15

CPC classification number: H01F10/1936 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/193 ,  H01F41/308 ,  H01L29/66984

Abstract: 상온에서 강자성체로부터 스핀분극된 캐리어를 반도체에 주입하여 얻어지는 스핀밸브 효과로부터 메모리 및 논리소자로 응용이 가능한 스핀주입소자 및 스핀 전계효과 트랜지스터를 제공한다.

公开(公告)号：KR100462791B1

公开(公告)日：2004-12-20

申请号：KR1020010075409

申请日：2001-11-30

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.

Abstract translation: 目的：提供一种用于制造具有能够应用于磁存储器和传感器的保持层的字线的方法，以提供主要由作为磁场保持器的Co构成并具有优异特性的磁层作为阻挡层。 用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102）;在绝缘层（100）中形成沟槽 使用光刻法，在沟槽的内外表面上涂布磁性保持层（106），在其整个表面上沉积由铜（Cu）制成的晶种层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在晶种层顶部上的沟槽（104），并平坦化导电层 110）通过使用化学机械抛光（CMP）方法直到绝缘层的顶表面暴露。

公开(公告)号：KR100452618B1

公开(公告)日：2004-10-15

申请号：KR1020010072201

申请日：2001-11-20

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.

Abstract translation: 目的：提供一种能够应用于传感器的磁存储器和字线制造方法，以实现相对于字线/位线的图案，以最大化转换磁化所需的磁​​场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 籽晶膜（106）沉积在沟槽的整个表面上。 在籽晶膜上涂覆铜材料的导电膜（108）以充分覆盖沟槽。 执行CMP工艺直到绝缘膜的上表面暴露。

公开(公告)号：KR1020030044596A

公开(公告)日：2003-06-09

申请号：KR1020010075409

申请日：2001-11-30

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

CPC classification number: H01L43/12 ,  G11C8/14

Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.

Abstract translation: 目的：提供一种具有能够施加到磁存储器和传感器的保持层的字线的制造方法，以提供主要由作为磁场保持器的Co构成的磁性层，并且具有优异的阻挡层特性。 构成：用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102），在绝缘层中形成沟槽 102），通过使用光刻法在预定深度处，通过使用物理气相沉积法在沟槽的内表面和外表面上涂覆磁保持层（106），在铜的整个表面上沉积由铜（Cu）制成的种子层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在种子层顶部上的沟槽（104）并使导电层平坦化（ 110）通过使用化学机械抛光（CMP）方法直到暴露绝缘层的顶表面。

公开(公告)号：KR100492482B1

公开(公告)日：2005-06-03

申请号：KR1020020053306

申请日：2002-09-04

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이정미 ,  명재민

IPC: H01L43/00 ,  C30B29/38 ,  H01F10/193

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/404 ,  H01F10/193 ,  H01F10/3213 ,  H01F41/30 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66984 ,  H01L33/40 ,  H01L43/08 ,  H01L43/10

Abstract: A 3 group - 5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material 'C' selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material 'A', the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

公开(公告)号：KR1020040081628A

公开(公告)日：2004-09-22

申请号：KR1020030016173

申请日：2003-03-14

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  신경호 ,  한석희 ,  장준연 ,  김희중 ,  김달영 ,  이관희 ,  이경일 ,  전민홍

IPC: G11B5/39

CPC classification number: H01F10/1936 ,  C25D3/54 ,  C25D5/50 ,  G11C11/14 ,  H01F1/401 ,  H01F41/18 ,  H01F41/26 ,  H01L43/12

Abstract: PURPOSE: A Bi thin film fabrication method is provided to fabricate a Bi thin film having a very big magnetoresistance property at room temperature by an electrodeposition method and a sputtering method, thereby being applicable to various spin electron elements. CONSTITUTION: By applying a current having a range of 1-100mA to a Bi solution at room temperature, a Bi thin film is formed on a substrate through an electrodeposition method with a deposition rate of 0.1-10micrometer/min. The fabricated Bi thin film has more than 600% of magnetoresistance ratio at room temperature when a 9T magnetic field is applied. Before depositing the Bi thin film, a Pt or Au under layer is deposited on the substrate with a thickness of 50-500 angstrom.

Abstract translation: 目的：提供Bi薄膜制造方法，通过电沉积法和溅射法在室温下制造具有非常大的磁阻特性的Bi薄膜，从而适用于各种旋转电子元件。 构成：通过在室温下向Bi溶液施加1-100mA范围的电流，通过电沉积法以0.1-10微米/分钟的沉积速率在基板上形成Bi薄膜。 当施加9T磁场时，制造的Bi薄膜在室温下具有超过600％的磁阻比。 在沉积Bi薄膜之前，将Pt或Au下层沉积在衬底上，厚度为50-500埃。

公开(公告)号：KR1020040081625A

公开(公告)日：2004-09-22

申请号：KR1020030016170

申请日：2003-03-14

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이한주 ,  황웅준 ,  신무환 ,  김영근

IPC: G11C11/15

CPC classification number: H01F10/1936 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/193 ,  H01F41/308 ,  H01L29/66984

Abstract: PURPOSE: A hybrid magnet/semiconductor spin device and its fabrication method are provided to fabricate a spin injection device and a spin field effect transistor from a spin valve effect obtained by injecting carriers spin-polarized from a ferromagnetic material into a semiconductor. CONSTITUTION: The hybrid magnet/semiconductor spin device includes a semiconductor substrate and a source region(21) of magnetic material formed on the substrate. A spin channel region is formed on the substrate and carriers spin-polarized from the source region are injected into the spin channel region. And a drain region(22) of magnetic material is formed on the substrate and spins passing through the spin channel region are detected in the drain region.

Abstract translation: 目的：提供一种混合磁体/半导体自旋装置及其制造方法，以从通过将从铁磁材料自旋极化的载流子注入半导体而获得的自旋阀效应来制造自旋注入装置和自旋场效应晶体管。 构成：混合磁体/半导体自旋装置包括半导体衬底和形成在衬底上的磁性材料源区（21）。 在衬底上形成自旋沟道区，并将从源极区自旋极化的载流子注入到自旋沟道区。 并且在衬底上形成磁性材料的漏极区域（22），并且在漏极区域中检测到通过自旋沟道区域的自旋。

公开(公告)号：KR100407907B1

公开(公告)日：2003-12-03

申请号：KR1020010026486

申请日：2001-05-15

Applicant: 한국과학기술연구원

Inventor： 신경호 ,  이우영 ,  박영준 ,  이경일 ,  하재근

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F41/307 ,  H01L43/12 ,  Y10T29/49044

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer (15), a tunnel barrier (16) formed at an upper surface of the first magnetic layer and a second magnetic layer (17) formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds SIMILAR 10 minutes at a temperature of 200 SIMILAR 600 DEG C to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract translation: 一种磁隧道结的制造方法包括以下步骤：形成磁隧道结，该磁隧道结构造为具有第一磁层（15），在第一磁层的上表面形成的隧道势垒（16）和第二磁层（ 17）形成在隧道屏障的上表面处; 并在200-600℃的温度下快速热处理5秒钟〜10分钟，使隧道壁垒中的氧重新分布，并使隧道壁垒与磁性层之间的界面均匀。 通过快速热退火可以提高磁隧道结的隧穿磁阻和热稳定性。 ＆lt;图像＆GT;

公开(公告)号：KR1020030041417A

公开(公告)日：2003-05-27

申请号：KR1020010072201

申请日：2001-11-20

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

CPC classification number: H01L43/12 ,  G11C8/14

Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.

Abstract translation: 目的：提供能够应用于传感器的磁存储器和字线制作方法，以实现相对于字线/位线的图案，以最大化磁化转化所需的磁​​场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 种子膜（106）沉积在沟槽的整个表面上。 将铜材料的导电膜（108）涂覆在种皮膜上，以充分覆盖沟槽。 进行CMP处理直到绝缘膜的上表面露出。