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Patent Agency Ranking
公开(公告)号：KR101803288B1
公开(公告)日：2017-12-01
申请号：KR1020150094016
申请日：2015-07-01
Applicant: 한국과학기술연구원
Abstract: 본발명은제1 기판, 상기제1 기판상에형성되는제1 박막층, 상기제1 박막층또는제1 기판에압력을가하는나노구조물및 상기압력에의해상기제1기판과상기제1박막층사이의전류변화를감지함으로써상기압력을측정하는압력측정부를포함하는나노압력센싱소자및 이를이용한압력센싱방법을개시한다.
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公开(公告)号：KR101867378B1
公开(公告)日：2018-06-15
申请号：KR1020160100097
申请日：2016-08-05
IPC: H01G4/12 , C04B35/468 , H01G4/30 , H01G13/00
Abstract: 본발명은기판을준비하는단계, 기판의상부에하부금속층을형성하는단계, 하부금속층의상부에 BSTO층을형성하는단계, 및 BSTO층의상부에상부금속층을형성하는단계를포함하는 BSTO 유전체를갖는축전지의제조방법에관한것이다.
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公开(公告)号：KR1020180016107A
公开(公告)日：2018-02-14
申请号：KR1020160100097
申请日：2016-08-05
IPC: H01G4/12 , C04B35/468 , H01G4/30 , H01G13/00
CPC classification number: H01G4/1227 , C04B35/4682 , H01G4/30 , H01G13/00
Abstract: 본발명은기판을준비하는단계, 기판의상부에하부금속층을형성하는단계, 하부금속층의상부에 BSTO층을형성하는단계, 및 BSTO층의상부에상부금속층을형성하는단계를포함하는 BSTO 유전체를갖는축전지의제조방법에관한것이다.
Abstract translation: 本发明是一种BSTO电介质以及形成在成形步骤的顶部，BSTO层上的下层金属层的顶部上的顶部金属层，以形成步骤中，底部金属层在所述基板的顶部，以制备底物，和BSTO层 一种制造具有该电池的电池的方法。
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公开(公告)号：KR1020170004113A
公开(公告)日：2017-01-11
申请号：KR1020150094016
申请日：2015-07-01
Applicant: 한국과학기술연구원
Abstract: 본발명은제1 기판, 상기제1 기판상에형성되는제1 박막층, 상기제1 박막층또는제1 기판에압력을가하는나노구조물및 상기압력에의해상기제1기판과상기제1박막층사이의전류변화를감지함으로써상기압력을측정하는압력측정부를포함하는나노압력센싱소자및 이를이용한압력센싱방법을개시한다.
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公开(公告)号：KR101348937B1
公开(公告)日：2014-01-09
申请号：KR1020120090297
申请日：2012-08-17
Applicant: 한국과학기술연구원
IPC: H01L29/778
CPC classification number: H01L29/778 , H01L29/24 , H01L29/408 , H01L29/516 , H01L29/66969 , H01L29/7786
Abstract: The present invention relates to an oxide electronic device and a manufacturing method thereof. The oxide electronic device comprises: an oxide substrate; an oxide thin film including a different type of oxide from the oxide substrate and formed on the oxide substrate; and a ferroelectric material layer formed on the oxide thin film and controlling the conductivity of two-dimensional electron gas (2DEG) generated on the oxide thin film and the oxide substrate. The manufacturing method comprises the following steps: forming the oxide thin film by depositing oxide which is different from the oxide substrate on the oxide substrate; and forming the ferroelectric material layer controlling the conductivity of 2DEG generated on the oxide thin film and the oxide substrate on the oxide thin film. By using the methods, the conductivity of 2DEG generated on the interface between the different types of oxide can be stably controlled through a non-volatile method by the ferroelectric material layer. Therefore, the conductivity of 2DEG can be constantly maintained without external electric energy, and the device does not require a lot of energy to be operated.
Abstract translation: 本发明涉及一种氧化物电子器件及其制造方法。 氧化物电子器件包括：氧化物衬底; 氧化物薄膜，其包含来自所述氧化物基板的不同类型的氧化物，并形成在所述氧化物基板上; 以及形成在氧化物薄膜上并控制在氧化物薄膜和氧化物基板上产生的二维电子气（2DEG）的导电性的铁电材料层。 该制造方法包括以下步骤：通过在氧化物基板上沉积与氧化物基板不同的氧化物来形成氧化物薄膜; 并且形成在氧化物薄膜和氧化物薄膜上的氧化物衬底上产生的2DEG的导电性的铁电体材料层。 通过使用该方法，可以通过铁电材料层的非挥发性方法稳定地控制在不同类型的氧化物之间的界面上产生的2DEG的电导率。 因此，不用外部电能可以不间断地维持2DEG的导电性，并且该装置不需要大量的能量来操作。
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