公开(公告)号：KR100402990B1

公开(公告)日：2003-10-23

申请号：KR1020010066260

申请日：2001-10-26

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  채경수 ,  김종용 ,  강호관

IPC: G02B26/00

Abstract: PURPOSE: A method for manufacturing an optical switch by using an ultraviolet rays LIGA technique is provided to prevent the generation of crack due to the relatively small residual stress by utilizing a polymer as a photo resist material during the manufacture of the optical switch, thereby improving the adhesion to the ground layer. CONSTITUTION: A method for manufacturing an optical switch by using an ultraviolet rays LIGA technique includes the steps of: forming an oxidation layer(20) on a semiconductor substrate(10) to a predetermined thickness, forming a polymer thick layer(30) on the oxidation layer(20) formed on the semiconductor substrate(10) by using the polymer as the photo resist material, removing a solvent resided at the formed polymer thick layer(30) by a soft baking, initializing so as to combine of a material consisting of the polymer thick layer(30) by implementing a photolithography on a negative type mask after the soft baking, accelerating the combination of the material of the initialized polymer thick layer by a post baking after the process of the photolithography, developing so as to pattern a specific region of the polymer thick layer(30) to a predetermined thickness after the post baking, depositing an electroplating material on the patterned region of the polymer thick layer(30) and etching the resided photo resist material by using a conventional removing material after the deposition of the electroplating material.

Abstract translation: 目的：提供一种通过使用紫外线LIGA技术制造光学开关的方法，以防止在制造光学开关期间利用聚合物作为光致抗蚀剂材料而由于相对较小的残余应力而产生裂纹，由此改善 对地面层的附着力。 本发明提供了一种利用紫外线LIGA技术制造光开关的方法，该方法包括以下步骤：在半导体衬底（10）上形成预定厚度的氧化层（20），在该半导体衬底（10）上形成聚合物厚层（30） 通过使用聚合物作为光致抗蚀剂材料在半导体基板（10）上形成氧化层（20），通过软烘烤除去驻留在形成的聚合物厚层（30）处的溶剂，初始化以组合由 通过在软烘烤之后在负型掩模上实施光刻，在光刻工艺之后通过后烘焙加速已初始化的聚合物厚层的材料的组合，进行显影以形成图案，从而形成聚合物厚层（30） 在后烘烤之后将聚合物厚层（30）的特定区域固定到预定厚度，在聚合物厚层（30）的图案化区域上沉积电镀材料， 在沉积电镀材料之后通过使用常规去除材料来沉积驻留的光致抗蚀剂材料。

公开(公告)号：KR1020030034608A

公开(公告)日：2003-05-09

申请号：KR1020010066260

申请日：2001-10-26

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  채경수 ,  김종용 ,  강호관

IPC: G02B26/00

Abstract: PURPOSE: A method for manufacturing an optical switch by using an ultraviolet rays LIGA technique is provided to prevent the generation of crack due to the relatively small residual stress by utilizing a polymer as a photo resist material during the manufacture of the optical switch, thereby improving the adhesion to the ground layer. CONSTITUTION: A method for manufacturing an optical switch by using an ultraviolet rays LIGA technique includes the steps of: forming an oxidation layer(20) on a semiconductor substrate(10) to a predetermined thickness, forming a polymer thick layer(30) on the oxidation layer(20) formed on the semiconductor substrate(10) by using the polymer as the photo resist material, removing a solvent resided at the formed polymer thick layer(30) by a soft baking, initializing so as to combine of a material consisting of the polymer thick layer(30) by implementing a photolithography on a negative type mask after the soft baking, accelerating the combination of the material of the initialized polymer thick layer by a post baking after the process of the photolithography, developing so as to pattern a specific region of the polymer thick layer(30) to a predetermined thickness after the post baking, depositing an electroplating material on the patterned region of the polymer thick layer(30) and etching the resided photo resist material by using a conventional removing material after the deposition of the electroplating material.

Abstract translation: 目的：提供一种使用紫外线LIGA技术制造光开关的方法，以防止在光开关制造期间利用聚合物作为光致抗蚀剂材料，由于残留应力相对较小而产生裂纹，从而改善 对地层的粘附。 构成：通过使用紫外线LIGA技术制造光开关的方法包括以下步骤：在半导体衬底（10）上形成预定厚度的氧化层（20），在其上形成聚合物厚层（30） 通过使用聚合物作为光致抗蚀剂材料形成在半导体衬底（10）上的氧化层（20），通过软烘烤除去形成在聚合物厚层（30）上的溶剂，进行初始化，以组合 通过在软烘烤之后在负型掩模上实施光刻法，在光刻之后通过后烘烤加速初始化的聚合物厚层的材料的组合，以形成图案 聚合物厚层（30）的特定区域在后烘烤后达到预定厚度，在聚合物厚层（30）的图案化区域上沉积电镀材料和etchi 在沉积电镀材料之后，使用常规的去除材料来涂覆驻留的光致抗蚀剂材料。