公开(公告)号：KR1020100131312A

公开(公告)日：2010-12-15

申请号：KR1020090050134

申请日：2009-06-05

Applicant: 한국과학기술연구원

Inventor： 황승상 ,  홍순만 ,  곽순종 ,  백경열 ,  구종민 ,  최승석 ,  마성원 ,  이응찬

IPC: C08G77/24 ,  C08G77/385 ,  C08G77/06 ,  C07F7/14

Abstract: PURPOSE: Fluorinated polysilsesquioxane and a producing method thereof are provided to use the fluorinated polysilsesquioxane as an inter-layer insulating film with the low dielectric constant. CONSTITUTION: Fluorinated polysilsesquioxane has a fluorohydrocarbon side chain, and is marked with chemical formula 1. In the chemical formula 1, R1 and R2 are selected from the group consisting of a fluoro aromatic group, a fluoroalkyl group, an allyl group, a vinyl group, an epoxy group, a methacryl group, and an acryl group. The number average molecular weight of the fluorinated polysilsesquioxane is 1,000~100,000.

Abstract translation: 目的：提供氟化聚倍半硅氧烷及其制备方法，以使用氟化聚倍半硅氧烷作为低介电常数的层间绝缘膜。 构成：氟化聚倍半硅氧烷具有氟代烃侧链，并用化学式1表示。在化学式1中，R 1和R 2选自氟代芳族基团，氟代烷基基团，烯丙基基团，乙烯基基团 ，环氧基，甲基丙烯酰基和丙烯酰基。 氟化聚倍半硅氧烷的数均分子量为1,000〜100,000。