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公开(公告)号：WO2010126305A3
公开(公告)日：2010-11-04
申请号：PCT/KR2010/002688
申请日：2010-04-28
Abstract: 폴리알킬티오펜 블록 공중합체, 이를 포함하는 전도성 조성물, 폴리알킬티오펜과 전이금속 촉매가 결합된 고분자-촉매 복합체 및 개환 메타세시스 반응을 통하여 상기 고분자-촉매 복합체로부터 전도성 블록 공중합체를 제조하는 방법이 제공된다.
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公开(公告)号：WO2012153972A3
公开(公告)日：2012-11-15
申请号：PCT/KR2012/003599
申请日：2012-05-08
IPC: C08G73/00 , C08G77/445 , C08L79/00 , C08L83/04 , H01B1/12
Abstract: 본 발명은 술폰화된 폴리페닐실세스퀴옥산 및 양의 저항온도계수를 가지게 하는 도판트로 도핑된 폴리아닐린에 관한 것이다. 상기 술폰화된 폴리페닐실세스퀴옥산은 폴리아닐린에 도핑 시 높은 내열성을 가지게 하며 또한 도핑된 폴리아닐린이 음의 저항온도계수를 갖게 한다. 음의 저항온도계수를 가지기 위한 술폰화된 폴리페닐실세스퀴옥산과 양의 저항온도계수를 가지기 위한 도판트가 동시에 도핑됨으로써 도핑된 폴리아닐린의 저항온도계수를 조절할 수 있게 된다.
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公开(公告)号：KR1020120058854A
公开(公告)日：2012-06-08
申请号：KR1020100120356
申请日：2010-11-30
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A low dielectric layer is provided to have low moisture absorption ratio, high surface modulus and hardness, together with excellent physical properties, and to embodying excellent low-dielectric performance. CONSTITUTION: A low dielectric layer comprises is manufactured by using silsesquioxane polymer matrix as a precursor. The silsesquioxane polymer matrix is a silsesquioxane sol, manufactured by polymerizing multi-reactive cyclic siloxane, a fluorinated silane monomer, and alkoxysilane. A manufacturing method of the low dielectric layer comprises: a step of manufacturing silsesquioxane by a sol-gel method by using multifunctional cyclic siloxane, fluorine silane monomer and alkoxysilane as monomers; a step of manufacturing coating liquid comprising the silsesquioxane sol, and solvent; and a step of spreading and curing the coating liquid.
Abstract translation: 目的：提供低介电层以具有低吸湿率，高表面模量和硬度，以及优异的物理性能，并具有优异的低介电性能。 构成：通过使用倍半硅氧烷聚合物基质作为前体制造低介电层。 倍半硅氧烷聚合物基体是通过聚合多反应性环状硅氧烷，氟化硅烷单体和烷氧基硅烷制造的倍半硅氧烷溶胶。 低介电层的制造方法包括：通过使用多官能环状硅氧烷，氟硅烷单体和烷氧基硅烷作为单体，通过溶胶 - 凝胶法制造倍半硅氧烷的步骤; 制造包含倍半硅氧烷溶胶的涂布液和溶剂的步骤; 以及涂布液的扩散和固化的步骤。
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公开(公告)号：KR1020100131347A
公开(公告)日：2010-12-15
申请号：KR1020100035325
申请日：2010-04-16
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A silsesquioxane polymer and a synthesis method thereof are provided to secure the low dielectric, the high modulus, and the compatibility with an organic solvent of the polymer. CONSTITUTION: A silsesquioxane polymer is obtained by condense-polymerizing a modified cyclic siloxane stereoisomer, and has the weight average molecular weight of 1,000~1,000,000. The modified cyclic siloxane stereoisomer is a cyclic siloxane substituted with a hydroxyl group. A synthesis method of the silsesquioxane polymer comprises the following steps: modifying the cyclic siloxane with a stereoisomer; separating the stereoisomer capable of forming a polymer; and condense-polymerzing the polymer using the stereoisomer as a monomer.
Abstract translation: 目的：提供倍半硅氧烷聚合物及其合成方法以确保低介电常数，高模量和与聚合物的有机溶剂的相容性。 构成：通过将改性的环状硅氧烷立体异构体进行缩聚而获得倍半硅氧烷聚合物，其重均分子量为1,000〜1,000,000。 改性环状硅氧烷立体异构体是用羟基取代的环状硅氧烷。 倍半硅氧烷聚合物的合成方法包括以下步骤：用立体异构体改性环状硅氧烷; 分离能够形成聚合物的立体异构体; 并使用立体异构体作为单体使聚合物缩聚。
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公开(公告)号：KR101249798B1
公开(公告)日：2013-04-03
申请号：KR1020100079633
申请日：2010-08-18
Applicant: 한국과학기술연구원
Abstract: 본 발명은 트리 알콕시 실록산 단량체를 통해 폴리실세스퀴옥산을 중합하는 방법으로서, 트리 알콕시 실록산 단량체, 유기 용매, 물 및 촉매를 포함하는 함수 유기용액을 제조하는 단계; 및 상기 함수 유기용액 중 유기 용매의 양 또는 함수량을 조절하는 단계를 포함하여 바구니형 폴리실세스퀴옥산 또는 사다리형 폴리실세스퀴옥산을 선택적으로 제조하는 것을 특징으로 하는 방법 및 이에 의해 제조된 바구니형 폴리실세스퀴옥산 또는 사다리형 폴리실세스퀴옥산에 관한 것이다.
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Patent Agency Ranking6.发明公开광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산을 포함하는 발광재료, 이의 박막 및 이를 포함하는 유기전자소자 有权包含具有梯形结构的光聚合键合聚硅氧烷的发光材料，使用其的薄膜和包含其的有机电解器件
公开(公告)号：KR1020110118890A
公开(公告)日：2011-11-02
申请号：KR1020100038276
申请日：2010-04-26
Applicant: 한국과학기술연구원
CPC classification number: C08G77/26 , H01L51/0094 , H01L51/5012 , Y02E10/549 , Y10T428/24355 , H01L51/0003 , H01L51/0044
Abstract: PURPOSE: A light-emitting material is provided to ensure excellent heat resistance and mechanical properties and high light emitting efficiency and to eliminate the disadvantages of a POSS structure with weak thin film properties. CONSTITUTION: A light-emitting material comprises polysilsesquioxane having a ladder structure where a photoactive group is bonded to a siloxane main chain. The polysilsesquioxane is represented by chemical formula 1. In chemical formula 1, R is a functional group having optical activity by a double or triple bond within a phenyl-based monocyclic group, a heterocyclic group thereof or cyclic group, or a derivative thereof, wherein the phenyl-based monocyclic group includes a substituted or unsubstituted phenylene, pyrene, rubrene, coumarin, oxazine, carbazole, thiophene, iridium, porphyrin, and azo-based dye functional groups; and n is 1-100,000.
Abstract translation: 目的：提供发光材料，以确保优异的耐热性和机械性能和高发光效率，并消除具有弱薄膜性能的POSS结构的缺点。 构成：发光材料包括具有光活性基团与硅氧烷主链结合的梯形结构的聚倍半硅氧烷。 聚倍半硅氧烷由化学式1表示。在化学式1中，R是在苯基单环基团，其杂环基团或环状基团或其衍生物中具有双键或三键的光学活性的官能团，其中 苯基单环基团包括取代或未取代的亚苯基，芘，红荧烯，香豆素，恶嗪，咔唑，噻吩，铱，卟啉和偶氮类染料官能团; n为1-100,000。
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公开(公告)号：KR1020090124613A
公开(公告)日：2009-12-03
申请号：KR1020080050926
申请日：2008-05-30
Applicant: 한국과학기술연구원
IPC: C07D409/04 , C07D249/02
CPC classification number: C08G61/126 , C08G2261/1412 , C08G2261/1646 , C08G2261/3223 , C08G2261/92
Abstract: PURPOSE: A method for functionalizing polyalkylthiophene terminal is provided to produce highly functional polyalkylthiophene of semiconductor layer for organic thin film transistor. CONSTITUTION: A method for functionalizing polyalkylthiophene terminal comprises: a step of polymerizing 2-bromot-3-funtional thiopene under the presence of catalyst containing LDA(lithium diisopropylamide), zinc chloride(ZnCl2) and (1,3-bis(diphenylphosphino)propane)dichlronikel(II); a step of reacting with grignard reagent of chemical formula 2(CH≡C-MgBr) to produce polyalkylthiophene having introduced alkyne group at terminal of chemical formula 3; and a step of reacting the polyalkylthiophene with azide compound of chemical formula 4(N3-R3).
Abstract translation: 目的：提供用于官能化聚烷基噻吩末端的方法，以制备用于有机薄膜晶体管的半导体层的高官能度聚烷基噻吩。 构成：聚烷基噻吩末端官能化的方法包括：在含有LDA（二异丙基氨基锂），氯化锌（ZnCl 2）和（1,3-双（二苯基膦基）丙烷）的催化剂存在下聚合2-溴-3-功能硫代萘的步骤 ）dichlronikel（II）; 与化学式2（CH≡C-MgBr）的格氏试剂反应生成在化学式3末端引入炔基的聚烷基噻吩的步骤; 和使聚烷基噻吩与化学式4（N 3 -R 3）的叠氮化合物反应的步骤。
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公开(公告)号：KR101401419B1
公开(公告)日：2014-05-30
申请号：KR1020120138346
申请日：2012-11-30
Applicant: 한국과학기술연구원
Abstract: The present invention relates to a low dielectric interlayer material and a method for preparing the same, wherein the low dielectric interlayer material includes a cyclic siloxane compound or bis (trialkoxy silyl) alkane (BTASA), silane compounds, and copolymers combined with a cage type polysilsesquioxane, and the cage type polysilsesquioxane forming gaps. The low dielectric interlayer material according to the present invention has high strength and a low dielectric constant, and excellent chemical, electrical, and thermal properties, thereby capable of being usefully applied to a device.
Abstract translation: 本发明涉及一种低介电中间层材料及其制备方法，其中低介电中间层材料包括环状硅氧烷化合物或双（三烷氧基甲硅烷基）烷烃（BTASA），硅烷化合物和与笼型结合的共聚物 聚倍半硅氧烷和笼型聚倍半硅氧烷形成间隙。 根据本发明的低介电中间层材料具有高强度和低介电常数，并且具有优异的化学，电和热性能，因此能够有效地应用于器件。
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9.发明公开술폰화된 폴리페닐실세스퀴옥산 및 양의 저항온도계수를 가지기 위한 도판트가 도핑된 폴리아닐린 도전체와 그의 제조방법 有权由磺化聚苯基倍半硅氧烷掺杂的聚苯胺和正电温度系数的掺杂剂及其制造方法
公开(公告)号：KR1020120126430A
公开(公告)日：2012-11-21
申请号：KR1020110044197
申请日：2011-05-11
Applicant: 아주대학교산학협력단 , 한국과학기술연구원
IPC: C08G73/00 , C08G77/455 , C08L79/00 , C08L83/04
CPC classification number: C08G73/1071 , C08L83/04 , H01B1/128
Abstract: PURPOSE: A polyaniline conductor doped with dopants is provided to control temperature resistant coefficient, electrical conductivity and thermal resistance and to be usable in a various fields such as an embedded capacitor, a resistor, antistatic, removal of electrostatic, electromagnetic wave shield, a battery, an electrode semiconductor, a solar cell, etc. CONSTITUTION: A polyaniline conductor is doped with sulfonated polyphenylsilsesquioxane and dopants enabling the polyaniline conductor to have a positive temperature coefficient. A manufacturing method of the polyaniline comprises: a step of dissolving an emeraldine base, polyaniline and sulfonated polyphenylsilsesquioxane; a step of manufacturing a first solution by mixing the material; a step of dissolving emeraldine base, polyaniline and the dopant into an organic solvent and mixing the materials to manufacturing a second solution; a step of mixing the first and second solutions; and a step of drying the mixed solution. [Reference numerals] (AA) Comparative embodiment 1; (BB) Embodiment 1; (CC) Embodiment 2; (DD) Embodiment 3; (EE) Embodiment 4; (FF) Comparative embodiment 2
Abstract translation: 目的：提供掺杂有掺杂剂的聚苯胺导体，以控制耐温系数，导电性和耐热性，并可用于各种领域，如嵌入式电容器，电阻器，抗静电，去除静电，电磁波屏蔽，电池 ，电极半导体，太阳能电池等。构成：聚苯胺导体掺杂有磺化聚苯基倍半硅氧烷和掺杂剂，使聚苯胺导体具有正温度系数。 聚苯胺的制造方法包括：将翠绿亚胺碱，聚苯胺和磺化聚苯基倍半硅氧烷溶解的步骤; 通过混合材料制造第一溶液的步骤; 将翠绿亚胺碱，聚苯胺和掺杂剂溶解在有机溶剂中并将材料混合以制造第二溶液的步骤; 混合第一和第二溶液的步骤; 以及干燥混合溶液的步骤。 （附图标记）（AA）比较实施例1; （BB）实施例1; （CC）实施例2; （DD）实施例3; （EE）实施例4; （FF）比较实施例2
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公开(公告)号：KR101187041B1
公开(公告)日：2012-09-28
申请号：KR1020100036547
申请日：2010-04-20
Applicant: 아주대학교산학협력단 , 한국과학기술연구원
IPC: C08G73/02 , C08G61/12 , C08G77/392 , C08G77/04
Abstract: 본 발명은 술폰화된 폴리페닐실세스퀴옥산(Sulfonated PolyPenylSilsesQuioxane, S-PPSQ)으로 도핑된 전도성 폴리아닐린 및 그의 제조 방법에 관한 것이다. 상기 술폰화된 폴리페닐실세스퀴옥산의 도핑으로 인하여 일반적인 폴리아닐린에 비해 전도성이 높고, 내열성이 높다.
상기 폴리아닐린은 폴리아닐린과 술폰화된 폴리페닐실세스퀴옥산을 유기용매에서 용해시킨 후, 교반하는 방법으로 제조할 수 있다.
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