公开(公告)号：KR100855105B1

公开(公告)日：2008-08-29

申请号：KR1020070058532

申请日：2007-06-14

Applicant: 한국과학기술연구원

Inventor： 구현철 ,  한석희 ,  장준연 ,  김형준 ,  마진석

IPC: H01L27/105 ,  H01L29/82

CPC classification number: G11C11/16 ,  H01L29/20 ,  H01L29/66984

Abstract: A spin transistor using perpendicular magnetization is provided to easily miniaturize a spin transistor while enabling resistance adjustment caused by a gate by forming a ferromagnetic source/drain whose magnetization direction is perpendicular to the upper surface of a channel layer. A channel layer(7) is formed in a semiconductor substrate(10). A ferromagnetic source(22) and a ferromagnetic drain(23) are disposed on the semiconductor substrate, separated from each other and magnetized in a direction perpendicular to the upper surface of the channel layer. A gate(15) is formed on the semiconductor substrate between the source and the drain, adjusting the spin direction of electrons passing through the channel layer. Spin-polarized electrons are implanted from the source to the channel layer, and the implanted electrons pass through the channel layer and are implanted into the drain. When the electron passes through the channel layer, the spin of the electron processes according to the voltage of the gate by a spin-orbit coupling inducing magnetic field(14). The magnetization direction of the source and the drain is uniformly fixed during an on-and-off operation. In the source and the drain, a ferromagnetic thin film and a non-magnetic thin film can be stacked alternately and repeatedly in a direction perpendicular to the upper surface of the channel layer.

Abstract translation: 提供使用垂直磁化的自旋晶体管，以通过形成其磁化方向垂直于沟道层的上表面的铁磁源极/漏极实现由栅极引起的电阻调节，从而容易地使自旋晶体管小型化。 在半导体衬底（10）中形成沟道层（7）。 铁氧体源（22）和铁磁性漏极（23）设置在半导体衬底上，彼此分离并在与沟道层的上表面垂直的方向上磁化。 在源极和漏极之间的半导体衬底上形成栅极（15），调整通过沟道层的电子的自旋方向。 自旋极化电子从源极注入到沟道层，并且注入的电子通过沟道层并且被注入到漏极中。 当电子通过沟道层时，电子自旋根据栅极的电压通过自旋 - 轨道耦合诱导磁场进行处理（14）。 源极和漏极的磁化方向在开 - 关操作期间均匀地固定。 在源极和漏极中，铁磁薄膜和非磁性薄膜可以在与沟道层的上表面垂直的方向上交替重复堆叠。