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公开(公告)号：KR1020070029385A
公开(公告)日：2007-03-14
申请号：KR1020050084113
申请日：2005-09-09
Applicant: 한국과학기술연구원
CPC classification number: C25D1/04 , B01J35/004 , B01J37/0225 , B82B3/0004 , C25D1/006
Abstract: Simple and efficient coating material and method for preparing a nanotube type CdSe film with photoactivity and increasing optical characteristics of the prepared film and stability of the film in an aqueous solution are provided. A method for preparing a CdSe film comprises: adding an aqueous selenium dioxide(SeO2) solution to an aqueous cadmium sulfate(CdSO4) solution to obtain a mixed solution with an acidity(pH) range of 2 to 3; immersing substrates as a counter electrode and a working electrode into the mixed solution respectively; and applying an electric current of 0.5 to 3.5 mA to the substrates at a temperature of 0 to 40 deg.C. The aqueous cadmium sulfate(CdSO4) solution and the aqueous selenium dioxide(SeO2) solution each has a concentration of 0.01 to 0.1M. Cadmium sulfate and selenium dioxide are mixed with each other at a mole rate of 5 to 10:1. The method further comprises heat-treating an obtained CdSe film at a temperature of 100 to 300 deg.C. The substrates as the counter electrode and the working electrode are selected from the group consisting of a titanium(Ti) substrate, a nickel(Ni) substrate, a molybdenum(Mo) substrate, a cadmium(Cd) substrate, a platinum(Pt) substrate, a gold(Au) substrate, an indium-tin-oxide(ITO) coated glass substrate, a stainless steel substrate, and a carbon substrate.
Abstract translation: 提供了简单有效的涂层材料和制备具有光活性的纳米管型CdSe膜并提高所制备的膜的光学特性以及膜在水溶液中的稳定性的方法。 制备CdSe膜的方法包括：向硫酸镉（CdSO 4）水溶液中加入二氧化硒水溶液（SeO 2），得到酸度（pH）范围为2-3的混合溶液; 将基板作为对电极和工作电极分别浸渍在混合溶液中; 并在0〜40℃的温度下向基板施加0.5〜3.5mA的电流。 硫酸镉水溶液（CdSO4）和二氧化硒（SeO2）溶液的浓度分别为0.01〜0.1M。 硫酸镉和二氧化硒以5至10:1的摩尔比彼此混合。 该方法还包括在100-300℃的温度下对得到的CdSe膜进行热处理。 作为对电极和工作电极的基板选自钛（Ti）基板，镍（Ni）基板，钼（Mo）基板，镉（Cd）基板，铂（Pt） 衬底，金（Au）衬底，涂覆有氧化铟锡（ITO）的玻璃衬底，不锈钢衬底和碳衬底。
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公开(公告)号：KR100699692B1
公开(公告)日：2007-03-26
申请号：KR1020050084113
申请日：2005-09-09
Applicant: 한국과학기술연구원
Abstract: 본 발명은 전착법을 이용하여 나노튜브 구조의 카드뮴셀레나이드(CdSe) 막을 제조한 후 막 표면에 광감응염료 및/또는 전도성고분자를 차례로 코팅하여, 나노튜브 CdSe 박막의 광특성과 수용액에서의 안정성을 증가시키는 방법에 관한 것으로서, 황산카드뮴(CdSO
4 ) 수용액과 셀레늄산화물(SeO
2 ) 수용액을 상온에서 교반하면서 섞어준 다음 여기에 상대전극(counter electrode: Pt sheet)과 작업전극(working electrode)으로서의 기판(ITO glass)을 침지시키고 일정 전류을 인가하여 나노튜브 형태의 CdSe 막을 제조하는 방법 및 이 막의 광특성과 수용액에서의 안정성을 증가시키기 위하여 광감응염료 및/또는 전도성고분자를 CdSe 막에 코팅하는 방법에 관한 것이다. 본 발명의 방법에 의하면, 튜브 형태의 나노구조 CdSe 박막을 간단하게 제조할 수 있으며 이렇게 제조된 CdSe 막에 광감응염료 및/또는 전도성고분자를 코팅함으로써 막의 광특성과 수용액에서의 안정성을 증가시킬 수 있으며 이렇게 처리된 CdSe 광전극은 전기나 화학원료를 얻기 위한 광전기화학전지의 전극으로 유용하게 사용될 수 있다.-
Patent Agency Ranking
公开(公告)号：KR100635302B1
公开(公告)日：2006-10-19
申请号：KR1020050036993
申请日：2005-05-03
Applicant: 한국과학기술연구원
Abstract: A method of preparing a large sized-nanocrystalline cobalt metal thin film with excellent catalytic activity in mild conditions is provided. A method of preparing a cobalt metal thin film by electrodeposition comprises: immersing a counter electrode and a working electrode into an aqueous solution that has a pH of 4 to 5 and contains a cobalt salt with a concentration of 10 to 500 mM; and impressing a voltage of -0.7 to -1.3 V to both electrodes at a temperature of 0 to 40 deg.C to form a Co metal thin film on the working electrode. The cobalt salt is selected from the group consisting of cobalt nitrate(Co(NO3)2), cobalt acetate(Co(C2H3O2)3), cobalt sulfate(CoSO4) and cobalt chloride(CoCl2). The working electrode and the counter electrode are substrates respectively selected from the group consisting of titanium(Ti), nickel(Ni), molybdenum(Mo), cadmium(Cd), platinum(Pt), gold(Au), Indium-Tin-Oxide(ITO) coated glass, stainless steel, and carbon substrate.
Abstract translation: 提供了在温和条件下制备具有优异催化活性的大尺寸纳米晶钴金属薄膜的方法。 通过电沉积制备钴金属薄膜的方法包括：将对电极和工作电极浸入pH值为4至5且含有浓度为10至500mM的钴盐的水溶液中; 在0〜40℃的温度下对两个电极施加-0.7〜-1.3V的电压，在工作电极上形成Co金属薄膜。 钴盐选自硝酸钴（Co（NO 3）2），乙酸钴（Co（C 2 H 3 O 2）3），硫酸钴（CoSO 4）和氯化钴（CoCl 2）。 工作电极和反电极是分别选自由钛（Ti），镍（Ni），钼（Mo），镉（Cd），铂（Pt），金（Au），铟锡合金 氧化物（ITO）镀膜玻璃，不锈钢和碳基板。
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公开(公告)号：KR100599879B1
公开(公告)日：2006-07-13
申请号：KR1020040038101
申请日：2004-05-28
Applicant: 한국과학기술연구원
IPC: C25D3/54
Abstract: 본 발명은 전착법을 이용한 무정질 티타늄 산화물 막의 제조방법에 관한 것으로서, 티타늄 염 및 착화제 각각을 0.01 내지 1M의 농도로 포함하는, pH 7 내지 12의 염기성 수용액 중에 상대전극(counter electrode)과 작업전극(working electrode)을 침지시킨 후 양 전극에 전압을 인가하는 본 발명의 전착법에 의하면, 조밀하고 균일하고 핀홀이 없는(pinhole free), 무정질의 티타늄 산화물 막을 온화한 조건에서 간단히 제조할 수 있으며, 이 막은 광감응태양전지 및 광전기화학전지의 전극 등 부식성이 높은 전극의 보호막으로서 유용하게 이용될 수 있다.
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公开(公告)号：KR100635303B1
公开(公告)日：2006-10-19
申请号：KR1020050036994
申请日：2005-05-03
Applicant: 한국과학기술연구원
Abstract: A method of preparing a crystalline Mo-Co mixture thin film with excellent catalytic activity efficiently in mild conditions is provided. A method of preparing a molybdenum-cobalt mixture thin film by electrodeposition comprises: immersing a counter electrode and a working electrode into an aqueous weak basic solution with a pH of 7 to 10 containing a cobalt salt and molybdic acid((NH4)6Mo7O24+85%MoO3) that respectively have concentrations of 10 to 200 mM; and impressing a voltage of -1.0 to -1.5 V to both electrodes at a temperature of 0 to 80 deg.C to form a Mo-Co mixture thin film on the working electrode. The aqueous weak basic solution is prepared by mixing an aqueous cobalt salt solution with an aqueous molybdic acid solution at a volume ratio of 20:1 to 1:20. The cobalt salt is selected from the group consisting of cobalt nitrate(Co(NO3)2), cobalt acetate(Co(C2H3O2)3), cobalt sulfate(CoSO4) and cobalt chloride(CoCl2). The working electrode and the counter electrode are substrates respectively selected from the group consisting of titanium(Ti), nickel(Ni), molybdenum(Mo), cadmium(Cd), platinum(Pt), gold(Au), Indium-Tin-Oxide(ITO) coated glass, stainless steel, and carbon substrate.
Abstract translation: 提供了在温和条件下有效地制备具有优异催化活性的结晶Mo-Co混合物薄膜的方法。 通过电沉积制备钼 - 钴混合物薄膜的方法包括：将对电极和工作电极浸入pH值为7至10的含有钴盐和钼酸（（NH 4）6 Mo 7 O 24 +85 ％MoO 3），其分别具有10至200mM的浓度; 并在0至80℃的温度下对两个电极施加-1.0至-1.5V的电压以在工作电极上形成Mo-Co混合物薄膜。 通过将钴盐水溶液与钼酸水溶液以20:1至1:20的体积比混合来制备弱碱性水溶液。 钴盐选自硝酸钴（Co（NO 3）2），乙酸钴（Co（C 2 H 3 O 2）3），硫酸钴（CoSO 4）和氯化钴（CoCl 2）。 工作电极和反电极是分别选自由钛（Ti），镍（Ni），钼（Mo），镉（Cd），铂（Pt），金（Au），铟锡合金 氧化物（ITO）镀膜玻璃，不锈钢和碳基板。
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公开(公告)号：KR100635300B1
公开(公告)日：2006-10-19
申请号：KR1020050036995
申请日：2005-05-03
Applicant: 한국과학기술연구원
Abstract: A method of preparing a Mo-Co alloy thin film with excellent catalytic activity efficiently in mild conditions is provided. A method of preparing a molybdenum-cobalt alloy(Co2Mo3) thin film by electrodeposition comprises: immersing a counter electrode and a working electrode into an aqueous acidic solution with a pH of 3 to 6 containing a complexing agent, a cobalt salt and molybdic acid((NH4)6Mo7O24+85%MoO3) that respectively have concentrations of 10 to 200 mM; and impressing a voltage of -1.0 to -1.5 V to both electrodes at a temperature of 0 to 80 deg.C to form a Mo-Co alloy thin film on the working electrode. The complexing agent is citric acid. The aqueous acidic solution is prepared by mixing an aqueous complexing agent solution, an aqueous cobalt salt solution and an aqueous molybdic acid solution. The cobalt salt is selected from the group consisting of cobalt nitrate(Co(NO3)2), cobalt acetate(Co(C2H3O2)3), cobalt sulfate(CoSO4) and cobalt chloride(CoCl2). The working electrode and the counter electrode are substrates respectively selected from the group consisting of titanium(Ti), nickel(Ni), molybdenum(Mo), cadmium(Cd), platinum(Pt), gold(Au), Indium-Tin-Oxide(ITO) coated glass, stainless steel, and carbon substrate.
Abstract translation: 提供了在温和条件下有效地制备具有优异催化活性的Mo-Co合金薄膜的方法。 通过电沉积制备钼 - 钴合金（Co 2 Mo 3）薄膜的方法包括：将对电极和工作电极浸入含有络合剂，钴盐和钼酸的pH为3至6的酸性水溶液（ （NH 4）6 Mo 7 O 24 + 85％MoO 3），其浓度分别为10至200mM; 在0〜80℃的温度下对两个电极施加-1.0〜-1.5V的电压，在工作电极上形成Mo-Co合金薄膜。 络合剂是柠檬酸。 通过混合络合剂水溶液，钴盐水溶液和钼酸水溶液来制备酸性水溶液。 钴盐选自硝酸钴（Co（NO 3）2），乙酸钴（Co（C 2 H 3 O 2）3），硫酸钴（CoSO 4）和氯化钴（CoCl 2）。 工作电极和反电极是分别选自由钛（Ti），镍（Ni），钼（Mo），镉（Cd），铂（Pt），金（Au），铟锡合金 氧化物（ITO）镀膜玻璃，不锈钢和碳基板。
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公开(公告)号：KR1020050112718A
公开(公告)日：2005-12-01
申请号：KR1020040038101
申请日：2004-05-28
Applicant: 한국과학기술연구원
IPC: C25D3/54
CPC classification number: C25D3/54
Abstract: 본 발명은 전착법을 이용한 무정질 티타늄 산화물 막의 제조방법에 관한 것으로서, 티타늄 염 및 착화제 각각을 0.01 내지 1M의 농도로 포함하는, pH 7 내지 12의 염기성 수용액 중에 상대전극(counter electrode)과 작업전극(working electrode)을 침지시킨 후 양 전극에 전압을 인가하는 본 발명의 전착법에 의하면, 조밀하고 균일하고 핀홀이 없는(pinhole free), 무정질의 티타늄 산화물 막을 온화한 조건에서 간단히 제조할 수 있으며, 이 막은 광감응태양전지 및 광전기화학전지의 전극 등 부식성이 높은 전극의 보호막으로서 유용하게 이용될 수 있다.
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