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公开(公告)号：KR1020070069423A
公开(公告)日：2007-07-03
申请号：KR1020050131558
申请日：2005-12-28
Applicant: 한국과학기술연구원
CPC classification number: H04B10/85 , H04B10/25 , H04L9/0852
Abstract: A direct transmission-type quantum encryption system based on phase-stabilized optical fibers is provided to coat the optical fibers with liquid crystal polymer materials, thereby configuring a stabilized quantum encryption one-way transmission system without a phase shift. Optical fibers(70), which are portions corresponding to inner optical systems of a transmitter and a receiver, are coated with liquid crystal polymer material, having negative thermal expansivity, in certain thickness, so that a phase shift caused by room temperature can be automatically compensated by positive thermal expansivity of the existing optical fibers and the negative thermal expansivity.
Abstract translation: 提供了一种基于相位稳定光纤的直接传输型量子加密系统，用液晶聚合物材料涂覆光纤，从而构成了一个稳定的量子加密单向传输系统，无需相移。 作为与发送器和接收器的内部光学系统对应的部分的光纤（70）以特定厚度涂覆具有负热膨胀性的液晶聚合物材料，使得由室温引起的相移可以自动地 通过现有光纤的正热膨胀性和负热膨胀性来补偿。
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公开(公告)号：KR100368792B1
公开(公告)日：2003-01-24
申请号：KR1020000043855
申请日：2000-07-28
Applicant: 한국과학기술연구원
IPC: H01L31/101 , G01J1/02
Abstract: PURPOSE: A method for manufacturing an infrared detection layer using a multilayered thin film method is provided to induce sufficient diffusion of oxygen to a single-layered thin film and to guarantee repeatability of a manufacturing process, by using two single-layered thin films which are stably manufactured by using general sputtering equipment. CONSTITUTION: A silicon nitride layer(200) is formed on a semiconductor substrate(100). The first vanadium oxide thin film(300) is formed on the silicon nitride layer. The first vanadium metal thin film(400) is formed on the first vanadium oxide thin film. The second vanadium oxide thin film(500) is formed on the first vanadium metal thin film. The n-th vanadium metal thin film(1000) is formed on the second vanadium oxide thin film. The n-th vanadium oxide thin film(1100) is formed on the n-th vanadium metal thin film. A heat treatment process is performed regarding the resultant structure to stabilize the multilayered thin film.
Abstract translation: 目的：提供一种使用多层薄膜方法制造红外检测层的方法，以通过使用两层单层薄膜来促使氧充分扩散到单层薄膜并确保制造过程的可重复性 采用通用溅射设备稳定制造。 构成：氮化硅层（200）形成在半导体衬底（100）上。 第一钒氧化物薄膜（300）形成在氮化硅层上。 第一钒金属薄膜（400）形成在第一钒氧化物薄膜上。 第二钒氧化物薄膜（500）形成在第一钒金属薄膜上。 第n钒金属薄膜（1000）形成在第二钒氧化物薄膜上。 第n钒氧化物薄膜（1100）形成在第n钒金属薄膜上。 对所得结构进行热处理工艺以稳定多层薄膜。
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公开(公告)号：KR100785520B1
公开(公告)日：2007-12-13
申请号：KR1020060072133
申请日：2006-07-31
Applicant: 한국과학기술연구원
CPC classification number: H04L9/0852 , G02B6/03633 , G02B6/03644 , G02B6/2861
Abstract: A quantum cryptography system is provided to enhance an operation stability of the cryptography system by compensating for a phase variation caused by a temperature variation between 0 and 30 degrees. A quantum cryptography system includes a transmitter(110) and a receiver(130), which are coupled with each other using a quantum channel(120). The transmitter includes a first optical fiber array, a first phase modulator, and an attenuator. The first optical fiber array includes long and short optical fibers. The first phase modulator modulates the signal on the long optical fiber. The attenuator generates two quanta from two signals, which are generated due to a path difference in the first optical fiber array. The receiver includes a second optical fiber array, a second phase modulator, and a detector. The second phase modulator modulates the signal on the long optical fiber. The detector detects the interference between the signals from the second optical fiber array.
Abstract translation: 提供量子加密系统，以通过补偿由0和30度之间的温度变化引起的相位变化来增强密码系统的操作稳定性。 量子密码系统包括使用量子信道（120）彼此耦合的发射机（110）和接收机（130）。 发射机包括第一光纤阵列，第一相位调制器和衰减器。 第一光纤阵列包括长和短光纤。 第一相调制器调制长光纤上的信号。 衰减器由两个信号产生两个量子，这两个信号由于第一光纤阵列中的路径差产生。 接收机包括第二光纤阵列，第二相位调制器和检测器。 第二相调制器调制长光纤上的信号。 检测器检测来自第二光纤阵列的信号之间的干扰。
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公开(公告)号：KR1020020010060A
公开(公告)日：2002-02-02
申请号：KR1020000043855
申请日：2000-07-28
Applicant: 한국과학기술연구원
IPC: H01L31/101 , G01J1/02
Abstract: PURPOSE: A method for manufacturing an infrared detection layer using a multilayered thin film method is provided to induce sufficient diffusion of oxygen to a single-layered thin film and to guarantee repeatability of a manufacturing process, by using two single-layered thin films which are stably manufactured by using general sputtering equipment. CONSTITUTION: A silicon nitride layer(200) is formed on a semiconductor substrate(100). The first vanadium oxide thin film(300) is formed on the silicon nitride layer. The first vanadium metal thin film(400) is formed on the first vanadium oxide thin film. The second vanadium oxide thin film(500) is formed on the first vanadium metal thin film. The n-th vanadium metal thin film(1000) is formed on the second vanadium oxide thin film. The n-th vanadium oxide thin film(1100) is formed on the n-th vanadium metal thin film. A heat treatment process is performed regarding the resultant structure to stabilize the multilayered thin film.
Abstract translation: 目的：提供一种使用多层薄膜方法制造红外检测层的方法，以通过使用两层单层薄膜来诱导足够的氧扩散到单层薄膜并保证制造工艺的重复性 通过使用一般的溅射设备稳定地制造。 构成：在半导体衬底（100）上形成氮化硅层（200）。 第一氧化钒薄膜（300）形成在氮化硅层上。 第一钒金属薄膜（400）形成在第一氧化钒薄膜上。 在第一钒金属薄膜上形成第二氧化钒薄膜（500）。 在第二钒氧化物薄膜上形成第n个钒金属薄膜（1000）。 在第n个钒金属薄膜上形成第n氧化钒薄膜（1100）。 对所得到的结构进行热处理工艺以稳定多层薄膜。
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