公开(公告)号：KR101740263B1

公开(公告)日：2017-05-29

申请号：KR1020137034452

申请日：2011-06-28

Applicant: 한국과학기술연구원

Inventor： 보우지드,압데싸타르 ,  문성욱 ,  이동훈 ,  김세민

IPC: G01J1/44 ,  H01L31/09

CPC classification number: H01L31/09 ,  G01J1/44 ,  G01J2001/442 ,  G01J2001/4466

Abstract: 본발명은 InGaAs/InP 아발란치포토다이오드(APD)에기초하는, 1.55 μm 의전기통신파장에서의단광자검출기(SPD)에관한것이다. SPD 를낮은후방펄스잡음에서동작시키기위해서는, 항복전압보다낮은 DC 바이어스전압이 InGaAs/InP APD에인가된다. 양극성구형게이팅신호가상기 DC 바이어스전압과중첩되고게이트신호의각 주기의게이트온 시간동안항복전압을초과하도록 APD에인가된다. 양극성구형게이팅신호의사용은게이트오프시간동안 APD를항복전압보다훨씬낮게동작시킬수 있도록하고, 이로써트랩된전하캐리어들의방출을더욱빠르게만들고, 후방펄스잡음을감소시킨다. 결과적으로, SPD의반복률을증가시키는것을가능하게한다.

Abstract translation: 本发明涉及基于InGaAs / InP雪崩光电二极管（APD）的1.55m电信波长的单光子探测器（SPD）。 为了以低反向脉冲噪声来操作SPD，将低于击穿电压的DC偏置电压施加到InGaAs / InP APD。 双极性球形门控信号叠加在直流偏置电压上并施加到APD，以超过栅极信号每个周期的栅极导通时间的击穿电压。 使用双极性球形门控信号可使APD在门控关闭期间的工作电压远低于击穿电压，从而使捕获的电荷载流子的发射更快并减少反向脉冲噪声。 结果，可以增加SPD的重复率。

公开(公告)号：KR1020140018402A

公开(公告)日：2014-02-12

申请号：KR1020137034452

申请日：2011-06-28

Applicant: 한국과학기술연구원

Inventor： 보우지드,압데싸타르 ,  문성욱 ,  이동훈 ,  김세민

IPC: G01J1/44 ,  H01L31/09

CPC classification number: H01L31/09 ,  G01J1/44 ,  G01J2001/442 ,  G01J2001/4466

Abstract: The present invention relates to a single photon detector (SPD) in 1.55 μm based on an InGaAs/InP avalanche photo diode (APD.) To operate the SPD in low back pulse noise, a DC bias voltage which is lower than a breakdown voltage is applied to the InGaAs/InP APD. A bipolar rectangular gating signal is overlapped with the DC bias voltage and is applied to the APD to exceed the breakdown voltage during a gate-on time of each period of the gate signals. The usage of the bipolar rectangular gating signal is provided to operate the APD in a voltage which is lower than the breakdown voltage during a gate-off time, thereby rapidly discharging trapped charge carriers and reducing the back pulse noise. Therefore, the increase of the repetition rate of the SPD is possible. [Reference numerals] (102) Gate signal; (103) DC bias; (104) Bias tee; (106) Input signal; (107) Output signal

Abstract translation: 本发明涉及基于InGaAs / InP雪崩光电二极管（APD）的1.55μm的单光子检测器（SPD）为了在低背脉冲噪声中操作SPD，低于击穿电压的DC偏置电压为 应用于InGaAs / InP APD。 双极矩形门控信号与直流偏置电压重叠，并且在栅极信号的每个周期的栅极导通时间期间施加到APD以超过击穿电压。 提供双极矩形门控信号的使用以在栅极截止时间内以比击穿电压低的电压操作APD，由此快速放电被俘获的电荷载流子并减少反向脉冲噪声。 因此，SPD的重复率的增加是可能的。 （102）门信号; （103）直流偏置; （104）偏斜三通 （106）输入信号; （107）输出信号