公开(公告)号：KR100764914B1

公开(公告)日：2007-10-09

申请号：KR1020060074198

申请日：2006-08-07

Applicant: 한국과학기술연구원

Inventor： 손재천 ,  한석희

IPC: H01P1/20 ,  H01P1/203

CPC classification number: H01P1/2013

Abstract: An electromagnetic noise filter is provided to control a signal blocking frequency band of the electromagnetic noise filter by adjusting the number of windings of an inductor line. An electromagnetic noise filter includes a semiconductor substrate(11), a dielectric thin film(12), a coplanar signal line(13), a first coplanar ground line(14a) and a second coplanar ground line(14b). The dielectric thin film(12) is formed on the upper surface of the semiconductor substrate(11). The coplanar signal line(13) is formed on the dielectric thin film(12) with conductive material, and has a spiral pattern which is wound at least once. The first coplanar ground line(14a) and the second coplanar ground line(14b) are formed on the dielectric thin film(12) with conductive material, and have a shape of surrounding the coplanar signal line(13).

Abstract translation: 提供电磁噪声滤波器，通过调节电感线圈的绕组数来控制电磁噪声滤波器的信号阻挡频带。 电磁噪声滤波器包括半导体衬底（11），电介质薄膜（12），共面信号线（13），第一共面接地线（14a）和第二共面接地线（14b）。 电介质薄膜（12）形成在半导体衬底（11）的上表面上。 共面信号线（13）用导电材料形成在电介质薄膜（12）上，并具有至少缠绕一次的螺旋图案。 第一共面接地线（14a）和第二共面接地线（14b）用导电材料形成在电介质薄膜（12）上，并具有包围共面信号线（13）的形状。

公开(公告)号：KR100660652B1

公开(公告)日：2006-12-22

申请号：KR1020050129202

申请日：2005-12-24

Applicant: 한국과학기술연구원

Inventor： 손재천 ,  한석희

IPC: H01L27/02

Abstract: An MMIC(Monolithic Microwave Integrated Circuit) type electromagnetic noise filter structure and an RF IC device with the same are provided to minimize the volume and complexity of circuitry and to improve a noise removing efficiency by manufacturing nonlinear semiconductor elements and a noise filter as one piece. A dielectric thin film(42) is formed on an upper surface of a semiconductor substrate(41). A coplanar signal line(43) is formed on the dielectric thin film. Both end portions of the coplanar signal line are connected with input/output portions. First and second coplanar ground lines(44a,44b) are formed at both sides of the coplanar signal line on the dielectric thin film.

Abstract translation: 提供MMIC（单片微波集成电路）型电磁噪声滤波器结构和具有该结构的RF IC器件以最小化电路的体积和复杂性，并且通过将非线性半导体元件和噪声滤波器制造为一体来提高噪声去除效率 。 电介质薄膜（42）形成在半导体衬底（41）的上表面上。 共面信号线（43）形成在电介质薄膜上。 共面信号线的两端部分与输入/输出部分连接。 第一和第二共面接地线（44a，44b）形成在电介质薄膜上的共面信号线的两侧。