ZnS 나노벨트 상온 자성반도체 제조방법
    2.
    发明授权
    ZnS 나노벨트 상온 자성반도체 제조방법 失效
    制造室温NANOBELTS ZNS FERROMAGNETIC SEMICONDUCTOR的方法

    公开(公告)号:KR100666729B1

    公开(公告)日:2007-01-09

    申请号:KR1020050062311

    申请日:2005-07-11

    CPC classification number: H01L43/10 B82Y25/00 H01L43/12

    Abstract: A method for manufacturing room temperature nano-belts ZnS ferromagnetic semiconductor is provided to realize spintronics by growing ZnS nano-belts doped with Mn and Fe on a substrate. A semiconductor manufacture apparatus is comprised of a reaction chamber(1), a quartz tube(3), and an alumina boat(7) for accommodating a mixed powder. A substrate(5) coated with Au colloid and a mixed powder made of ZnO, FeS, and MnCl2 are placed in an inner of the reactive chamber. The mixed powder is heated to be vaporized. Upon supplying Ar gas into the reactive chamber and moving the vaporized mixed powder, ZnS nano-belts doped with Mn and Fe is grown on the substrate.

    Abstract translation: 提供制造室温纳米带ZnS铁磁半导体的方法,通过在衬底上生长掺杂有Mn和Fe的ZnS纳米带来实现自旋电子学。 半导体制造装置由用于容纳混合粉末的反应室(1),石英管(3)和氧化铝舟(7)组成。 将涂有Au胶体的基材(5)和由ZnO,FeS和MnCl 2制成的混合粉末放置在反应室的内部。 混合的粉末被加热以汽化。 在将Ar气体供应到反应室中并移动蒸发的混合粉末时,在衬底上生长掺杂有Mn和Fe的ZnS纳米带。

Patent Agency Ranking