公开(公告)号：KR101431656B1

公开(公告)日：2014-08-21

申请号：KR1020130037445

申请日：2013-04-05

Applicant: 한국과학기술연구원

Inventor： 정병기 ,  김수동 ,  이수연 ,  신상열 ,  안형우

IPC: H01L45/00 ,  H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/143 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1625 ,  H01L45/06 ,  H01L45/144 ,  H01L45/16

Abstract: According to the present description, the present invention provides a manufacturing method of a chalcogenide switching device which comprises the steps of: forming a first electrode on an SOI substrate; forming a chalcogenide substance comprising Gex and Se_1-x on the first electrode; and forming a second electrode on the chalcogenide substance. The x is greater than 0 and less than 1. The present invention also provides the chalcogenide switching device manufactured by the same method.

Abstract translation: 根据本说明书，本发明提供了一种硫族化物开关器件的制造方法，该方法包括以下步骤：在SOI衬底上形成第一电极; 在第一电极上形成包含Gex和Se_1-x的硫族化物物质; 并在硫族化物物质上形成第二电极。 x大于0且小于1.本发明还提供了通过相同方法制造的硫族化物开关装置。

公开(公告)号：KR101436924B1

公开(公告)日：2014-09-03

申请号：KR1020130039961

申请日：2013-04-11

Applicant: 한국과학기술연구원

Inventor： 정병기 ,  이수연 ,  안형우 ,  신상열 ,  김수동

IPC: H01L45/00

CPC classification number: H01L45/141 ,  H01L45/143 ,  H01L45/145 ,  H01L45/1608

Abstract: According to the present invention, provided is a method for manufacturing an ovonic threshold switching device with an N-doped chalcogenide material and the ovonic threshold switching device manufactured thereby. The method for manufacturing the ovonic threshold switching device with the N-doped chalcogenide material includes the steps of forming an insulation layer on a substrate; forming a first electrode on the insulation layer; forming a chalcogenide material including N, Ge, and Se on the first electrode; and forming a second electrode on the chalcogenide material.

Abstract translation: 根据本发明，提供一种用于制造具有N掺杂的硫族化物材料和由此制造的超声阈值开关器件的超声阈值开关器件的方法。 制造具有N掺杂硫族化物材料的超声阈值开关器件的方法包括在衬底上形成绝缘层的步骤; 在所述绝缘层上形成第一电极; 在所述第一电极上形成包括N，Ge和Se的硫族化物材料; 并在硫族化物材料上形成第二电极。