公开(公告)号：KR101424603B1

公开(公告)日：2014-08-04

申请号：KR1020130108576

申请日：2013-09-10

Applicant: 한국과학기술연구원

Inventor： 임정아 ,  송용원 ,  홍재민 ,  최원국 ,  엄대성

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/1606 ,  C01B32/184 ,  C01B32/23 ,  H01L21/02527 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/0692 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684

Abstract: The present invention relates to a method of manufacturing a thin film transistor. The present invention provides a single-process method of manufacturing a thin film transistor which includes a step of preparing ink containing a solution in which graphene oxide, reduced graphene oxide, or the combination of the two is diffused; a step of forming the ink in a pattern on a substrate; a step of forming a source electrode and a drain electrode placed at the edge of the pattern by the coffee ring effect; and a step of forming a semiconductor channel between the source electrode and drain electrode.

Abstract translation: 本发明涉及薄膜晶体管的制造方法。 本发明提供一种制造薄膜晶体管的单工艺方法，其包括制备含有氧化石墨烯，氧化还原型石墨烯或二者的组合扩散的溶液的油墨的步骤; 在基板上形成图案的墨水的步骤; 通过咖啡环效应形成位于图案边缘处的源电极和漏电极的步骤; 以及在源极和漏极之间形成半导体沟道的步骤。